公开(公告)号：US20150093891A1

公开(公告)日：2015-04-02

申请号：US14482601

申请日：2014-09-10

申请人： Applied Materials, Inc.

发明人： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang Ho YU ,  Mathew ABRAHAM

IPC分类号： H01L21/768

CPC分类号： H01L21/76877 ,  C23C16/18 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76883

摘要： Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

摘要翻译： 提供了在半导体器件的特征定义中沉积金属层的方法。 在一个实施方案中，提供了一种用于沉积用于形成半导体器件的金属层的方法。 该方法包括进行循环金属沉积工艺以将金属层沉积在衬底上并使设置在衬底上的金属层退火。 循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将金属层的一部分沉积在衬底上，将金属层的一部分暴露于等离子体处理工艺或氢退火工艺中，并重复暴露衬底 到沉积前体气体混合物并将金属层的该部分暴露于等离子体处理工艺或氢气退火工艺中，直到达到金属层的预定厚度。

公开(公告)号：US20180068890A1

公开(公告)日：2018-03-08

申请号：US15811647

申请日：2017-11-13

申请人： Applied Materials, Inc.

发明人： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang-Ho YU ,  Mathew ABRAHAM

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L21/48 ,  H01L21/285 ,  H01L29/66

CPC分类号： H01L21/76879 ,  H01L21/02057 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/4846 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/66621

摘要： Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

公开(公告)号：US20160247718A1

公开(公告)日：2016-08-25

申请号：US15145578

申请日：2016-05-03

申请人： Applied Materials, Inc.

发明人： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang-ho YU ,  Mathew ABRAHAM

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/02

CPC分类号： H01L21/76879 ,  H01L21/02057 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/4846 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/66621

摘要： Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

公开(公告)号：US20160322229A1

公开(公告)日：2016-11-03

申请号：US14790862

申请日：2015-07-02

申请人： APPLIED MATERIALS, INC.

发明人： Seshadri GANGULI ,  Yixiong YANG ,  Bhushan N. ZOPE ,  Xinyu FU ,  Avgerinos V. GELATOS ,  Guoqiang JIAN ,  Bo ZHENG

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/324

CPC分类号： H01L21/28518 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/53266

摘要： Methods for selectively depositing a metal silicide layer are provided herein. In some embodiments, a method of selectively depositing a metal silicide layer includes: (a) providing a substrate having a first layer to a process chamber, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening defined by one or more sidewalls and a bottom surface wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium; (b) exposing the substrate to a precursor gas comprising a metal halide; (c) purging the precursor gas from the process chamber using an inert gas; (d) exposing the substrate to a silicon containing gas; (e) purging the silicon containing gas from the process chamber using an inert gas; (f) repeating (b)-(e) to selectively deposit a metal silicide along the bottom surface to a predetermined thickness; and (g) annealing the substrate after depositing the metal silicide layer.

摘要翻译： 本文提供了选择性沉积金属硅化物层的方法。 在一些实施例中，选择性沉积金属硅化物层的方法包括：（a）向处理室提供具有第一层的衬底，其中第一层包括第一表面和形成在第一表面中的特征，包括限定的开口 通过一个或多个侧壁和底表面，其中所述侧壁包括氧化硅或氮化硅之一，并且其中所述底表面包括硅或锗中的至少一种; （b）将衬底暴露于包含金属卤化物的前体气体; （c）使用惰性气体从处理室吹扫前体气体; （d）将衬底暴露于含硅气体; （e）使用惰性气体从处理室清洗含硅气体; （f）重复（b） - （e）沿着底表面选择性地沉积金属硅化物至预定厚度; 和（g）在沉积金属硅化物层之后退火衬底。

公开(公告)号：US20170084486A1

公开(公告)日：2017-03-23

申请号：US15364780

申请日：2016-11-30

申请人： Applied Materials, Inc.

发明人： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang Ho YU ,  Mathew ABRAHAM

IPC分类号： H01L21/768 ,  H01L21/285

摘要： Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

公开(公告)号：US20150079784A1

公开(公告)日：2015-03-19

申请号：US14026147

申请日：2013-09-13

申请人： Applied Materials, Inc.

发明人： Bhushan N. ZOPE ,  Avgerinos V. GELATOS

IPC分类号： H01L21/285 ,  H01L21/768 ,  C23C14/22 ,  C23C16/50 ,  C23C16/18

CPC分类号： H01L21/76879 ,  C23C14/22 ,  C23C16/0245 ,  C23C16/0281 ,  C23C16/18 ,  C23C16/50 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the present invention generally relate to a method of forming a cobalt layer on a dielectric material without incubation delay. Prior to depositing the cobalt layer using CVD, the surface of the dielectric material is pretreated at a temperature between 100° C. and 250° C. Since the subsequent CVD cobalt process is also performed at between 100° C. and 250° C., one processing chamber is used for pretreating the dielectric material and forming of the cobalt layer. The combination of processing steps enables use of two processing chambers to deposit cobalt.

摘要翻译： 本发明的实施方案一般涉及在电介质材料上形成钴层的方法，而不会产生温度延迟。 在使用CVD沉积钴层之前，介电材料的表面在100℃和250℃之间的温度下预处理。由于随后的CVD钴工艺也在100℃和250℃之间进行。 使用一个处理室来预处理介电材料和形成钴层。 处理步骤的组合使得能够使用两个处理室来沉积钴。

公开(公告)号：US20140326276A1

公开(公告)日：2014-11-06

申请号：US14255443

申请日：2014-04-17

申请人： APPLIED MATERIALS, INC.

发明人： Kai WU ,  Bo ZHENG ,  Sang Ho YU ,  Avgerinos V. GELATOS ,  Bhushan N. ZOPE ,  Jeffrey ANTHIS ,  Benjamin SCHMIEGE

IPC分类号： C23C16/44

CPC分类号： C23C16/4405 ,  B08B9/00 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32862

摘要： Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.

摘要翻译： 本文描述的实施方式一般涉及用于从半导体衬底处理室的一个或多个内表面原位去除不想要的沉积累积的方法和装置。 在一个实施方式中，提供了在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除含钴或钴的沉积物的方法。 该方法包括从含氟清洗气体混合物中形成反应性物质，使反应物质与钴和/或含钴沉积物反应形成气态氟化钴，并将氟化氢以气态吹扫出来 基板处理室。