公开(公告)号：US20140326276A1

公开(公告)日：2014-11-06

申请号：US14255443

申请日：2014-04-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Kai WU ,  Bo ZHENG ,  Sang Ho YU ,  Avgerinos V. GELATOS ,  Bhushan N. ZOPE ,  Jeffrey ANTHIS ,  Benjamin SCHMIEGE

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  B08B9/00 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32862

Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.

Abstract translation: 本文描述的实施方式一般涉及用于从半导体衬底处理室的一个或多个内表面原位去除不想要的沉积累积的方法和装置。 在一个实施方式中，提供了在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除含钴或钴的沉积物的方法。 该方法包括从含氟清洗气体混合物中形成反应性物质，使反应物质与钴和/或含钴沉积物反应形成气态氟化钴，并将氟化氢以气态吹扫出来 基板处理室。