公开(公告)号：US20190326120A1

公开(公告)日：2019-10-24

申请号：US16381776

申请日：2019-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Guoqiang JIAN ,  WEI TANG ,  CHI-CHOU LIN ,  PAUL MA ,  YIXIONG YANG ,  MEI CHANG ,  WENYI LIU

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/02 ,  H01L29/49

Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.

公开(公告)号：US20160322229A1

公开(公告)日：2016-11-03

申请号：US14790862

申请日：2015-07-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Seshadri GANGULI ,  Yixiong YANG ,  Bhushan N. ZOPE ,  Xinyu FU ,  Avgerinos V. GELATOS ,  Guoqiang JIAN ,  Bo ZHENG

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/324

CPC classification number: H01L21/28518 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/53266

Abstract: Methods for selectively depositing a metal silicide layer are provided herein. In some embodiments, a method of selectively depositing a metal silicide layer includes: (a) providing a substrate having a first layer to a process chamber, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening defined by one or more sidewalls and a bottom surface wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium; (b) exposing the substrate to a precursor gas comprising a metal halide; (c) purging the precursor gas from the process chamber using an inert gas; (d) exposing the substrate to a silicon containing gas; (e) purging the silicon containing gas from the process chamber using an inert gas; (f) repeating (b)-(e) to selectively deposit a metal silicide along the bottom surface to a predetermined thickness; and (g) annealing the substrate after depositing the metal silicide layer.

Abstract translation: 本文提供了选择性沉积金属硅化物层的方法。 在一些实施例中，选择性沉积金属硅化物层的方法包括：（a）向处理室提供具有第一层的衬底，其中第一层包括第一表面和形成在第一表面中的特征，包括限定的开口 通过一个或多个侧壁和底表面，其中所述侧壁包括氧化硅或氮化硅之一，并且其中所述底表面包括硅或锗中的至少一种; （b）将衬底暴露于包含金属卤化物的前体气体; （c）使用惰性气体从处理室吹扫前体气体; （d）将衬底暴露于含硅气体; （e）使用惰性气体从处理室清洗含硅气体; （f）重复（b） - （e）沿着底表面选择性地沉积金属硅化物至预定厚度; 和（g）在沉积金属硅化物层之后退火衬底。

公开(公告)号：US20210246552A1

公开(公告)日：2021-08-12

申请号：US17242898

申请日：2021-04-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. RASHEED ,  Srinivas GANDIKOTA ,  Mario Dan SANCHEZ ,  Guoqiang JIAN ,  Yixiong YANG ,  Deepak JADHAV ,  Ashutosh AGARWAL

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/452 ,  H01J37/32

Abstract: Apparatus for processing a substrate are provided herein. In some embodiments, a lid for a substrate processing chamber includes: a lid plate comprising an upper surface and a contoured bottom surface, the upper surface having a central opening and the contoured bottom surface having a first portion that extends downwardly and outwardly from the central opening to a peripheral portion of the lid plate and a second portion that extends radially outward along the peripheral portion of the lid plate; an upper flange extending radially outward from the lid plate; and one or more channels formed through the lid plate from the upper surface of the lid plate to the second portion of the contoured bottom surface.

公开(公告)号：US20200303250A1

公开(公告)日：2020-09-24

申请号：US16803842

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Feiyue MA ,  Kai WU ,  Yu LEI ,  Kazuya DAITO ,  Yi XU ,  Vikash BANTHIA ,  Mei CHANG ,  He REN ,  Raymond Hoiman HUNG ,  Yakuan YAO ,  Avgerinos V. GELATOS ,  David T. OR ,  Jing ZHOU ,  Guoqiang JIAN ,  Chi-Chou LIN ,  Yiming LAI ,  Jia YE ,  Jenn-Yue WANG

IPC: H01L21/768 ,  H01L21/3213 ,  H01L21/02

Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

公开(公告)号：US20160312360A1

公开(公告)日：2016-10-27

申请号：US14734838

申请日：2015-06-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. RASHEED ,  Srinivas GANDIKOTA ,  Mario Dan SANCHEZ ,  Guoqiang JIAN ,  Yixiong YANG ,  Deepak JADHAV ,  Ashutosh AGARWAL

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45544 ,  C23C16/4405 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45502 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45591 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body; a chamber lid assembly having a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; and a gas distribution plate disposed below the lid plate and having a plurality of apertures disposed through the gas distribution plate.

Abstract translation: 本文提供了用于处理衬底的方法和设备。 在一些实施例中，衬底处理室包括：腔体; 腔室盖组件，其具有围绕中心通道的壳体，所述中心通道沿着中心轴线延伸并具有上部和下部; 盖板，其联接到壳体并且具有轮廓的底表面，其从耦合到中心通道的下部的中心开口向下和向外延伸到盖板的周边部分; 以及配置在所述盖板的下方并具有贯穿所述气体分配板的多个孔的气体分配板。

公开(公告)号：US20160276214A1

公开(公告)日：2016-09-22

申请号：US14717740

申请日：2015-05-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Xinyu FU ,  Srinivas GANDIKOTA ,  Mei CHANG ,  Seshadri GANGULI ,  Guoqiang JIAN ,  Yixiong YANG ,  Vikash BANTHIA ,  Jonathan BAKKE

IPC: H01L21/768

CPC classification number: H01L21/76816 ,  H01L21/32135 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76879

Abstract: Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WCIx) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.

Abstract translation: 本发明提供蚀刻基板的方法。 在一些实施例中，用于蚀刻设置在处理室的处理体积内的衬底的方法包括：（a）将设置在衬底顶部的第一层暴露于包含氯化钨（WCIx）的第一气体第一时间段 第一压力，其中x为5或6; （b）使用惰性气体吹扫第一气体的处理量第二段; （c）在清洗第一气体的处理容积之后，将衬底暴露于含氢气体持续第三时间以蚀刻第一层; 和（d）使用惰性气体净化含氢气体的处理量第四个时间段。