公开(公告)号：US20210246552A1

公开(公告)日：2021-08-12

申请号：US17242898

申请日：2021-04-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. RASHEED ,  Srinivas GANDIKOTA ,  Mario Dan SANCHEZ ,  Guoqiang JIAN ,  Yixiong YANG ,  Deepak JADHAV ,  Ashutosh AGARWAL

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/452 ,  H01J37/32

Abstract: Apparatus for processing a substrate are provided herein. In some embodiments, a lid for a substrate processing chamber includes: a lid plate comprising an upper surface and a contoured bottom surface, the upper surface having a central opening and the contoured bottom surface having a first portion that extends downwardly and outwardly from the central opening to a peripheral portion of the lid plate and a second portion that extends radially outward along the peripheral portion of the lid plate; an upper flange extending radially outward from the lid plate; and one or more channels formed through the lid plate from the upper surface of the lid plate to the second portion of the contoured bottom surface.

公开(公告)号：US20160372351A1

公开(公告)日：2016-12-22

申请号：US15188103

申请日：2016-06-21

Applicant: Applied Materials, Inc.

Inventor： Kaushal K. SINGH ,  Deepak JADHAV ,  Ashutosh AGARWAL ,  Ashish GOEL ,  Vijay PARIHAR ,  Er-Xuan PING ,  Randhir P.S. THAKUR

IPC: H01L21/67 ,  C23C16/455 ,  H01L21/475 ,  H01L21/441 ,  H01L21/02 ,  H01L21/4757

CPC classification number: C23C16/45525 ,  C23C14/56 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02181 ,  H01L21/02381 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723

Abstract: Embodiments described herein provide a remote plasma system utilizing a microwave source. Additionally, generation and deposition techniques for 2D transition metal chalcogenides with large area uniformity utilizing microwave assisted generation of radicals is disclosed. Plasma may be generated remotely utilizing the microwave source. A processing platform configured to deposit 2D transition metal chalcogenides is also disclosed.

Abstract translation: 本文所述的实施例提供了利用微波源的远程等离子体系统。 另外，公开了利用微波辅助生成自由基的具有大面积均匀性的二维过渡金属硫族化物的生成和沉积技术。 可以使用微波源远程产生等离子体。 还公开了一种配置成沉积2D过渡金属硫属化物的处理平台。

公开(公告)号：US20160312360A1

公开(公告)日：2016-10-27

申请号：US14734838

申请日：2015-06-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. RASHEED ,  Srinivas GANDIKOTA ,  Mario Dan SANCHEZ ,  Guoqiang JIAN ,  Yixiong YANG ,  Deepak JADHAV ,  Ashutosh AGARWAL

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45544 ,  C23C16/4405 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45502 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45591 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body; a chamber lid assembly having a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; and a gas distribution plate disposed below the lid plate and having a plurality of apertures disposed through the gas distribution plate.

Abstract translation: 本文提供了用于处理衬底的方法和设备。 在一些实施例中，衬底处理室包括：腔体; 腔室盖组件，其具有围绕中心通道的壳体，所述中心通道沿着中心轴线延伸并具有上部和下部; 盖板，其联接到壳体并且具有轮廓的底表面，其从耦合到中心通道的下部的中心开口向下和向外延伸到盖板的周边部分; 以及配置在所述盖板的下方并具有贯穿所述气体分配板的多个孔的气体分配板。