公开(公告)号：US20200087784A1

公开(公告)日：2020-03-19

申请号：US16693631

申请日：2019-11-25

Applicant: APPLIED MATERIALS, INC.

Inventor： DIEN-YEH WU ,  PAUL MA ,  GUODAN WEI ,  CHUN-TEH KAO

IPC: C23C16/455 ,  C23C16/44

Abstract: A chamber lid assembly includes: a central channel having an upper portion and a lower portion and extending along a central axis; a housing at least partially defining a first and a second annular channel, each fluidly coupled to the central channel; a first plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the first annular channel and the central channel; a second plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the second annular channel and the central channel, wherein the first and the second plurality of apertures are angled differently with respect to the central axis so as to induce opposing rotational flow of gases about the central axis; and a tapered bottom surface extending from the lower portion of the central channel to a peripheral portion of the chamber lid assembly.

公开(公告)号：US20190390949A1

公开(公告)日：2019-12-26

申请号：US16432104

申请日：2019-06-05

Applicant: APPLIED MATERIALS, INC.

Inventor： KAI WU ,  WEI MIN CHAN ,  PEIQI WANG ,  PAUL MA ,  EDWARD BUDIARTO ,  KUN XU ,  TODD J. EGAN

IPC: G01B7/06 ,  C23C16/52

Abstract: A method and system for determining a thickness of a conductive film layer deposited on a wafer include at two eddy current sensors to take electrical resistivity measurements of the conductive film layer on the wafer as the wafer is being transported by a robot arm, a temperature sensor to determine a temperature change of the wafer during the electrical resistivity measurement, and a processing device to adjust a value of the electrical resistivity measurement by an amount based on the determined temperature change and to determine a thickness of the conductive film layer using the adjusted value of the electrical resistivity measurement and a previously determined correlation between electrical resistivity measurement values and respective thicknesses of conductive film layers. Alternatively, the wafer can be kept at a steady temperature when taking electrical resistivity measurements of the conductive film layer to determine a thickness of the conductive film layer.

公开(公告)号：US20190338415A1

公开(公告)日：2019-11-07

申请号：US16398782

申请日：2019-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： JACQUELINE WRENCH ,  LIQI WU ,  HSIANG NING WU ,  PAUL MA ,  SANG-HO YU ,  FUQUN GRACE VASIKNANONTE ,  NOBUYUKI SASAKI

IPC: C23C16/12 ,  H01L21/02

Abstract: Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for a duration of approximately 60 seconds to approximately 120 seconds.

公开(公告)号：US20190326120A1

公开(公告)日：2019-10-24

申请号：US16381776

申请日：2019-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Guoqiang JIAN ,  WEI TANG ,  CHI-CHOU LIN ,  PAUL MA ,  YIXIONG YANG ,  MEI CHANG ,  WENYI LIU

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/02 ,  H01L29/49

Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.