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    ATOMIC LAYER DEPOSITION CHAMBER WITH COUNTER-FLOW MULTI INJECT
    4.
    发明申请
    ATOMIC LAYER DEPOSITION CHAMBER WITH COUNTER-FLOW MULTI INJECT 审中-公开

    公开(公告)号：US20200087784A1

    公开(公告)日：2020-03-19

    申请号：US16693631

    申请日：2019-11-25

    Applicant: APPLIED MATERIALS, INC.

    Inventor： DIEN-YEH WU ,  PAUL MA ,  GUODAN WEI ,  CHUN-TEH KAO

    IPC: C23C16/455 ,  C23C16/44

    Abstract: A chamber lid assembly includes: a central channel having an upper portion and a lower portion and extending along a central axis; a housing at least partially defining a first and a second annular channel, each fluidly coupled to the central channel; a first plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the first annular channel and the central channel; a second plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the second annular channel and the central channel, wherein the first and the second plurality of apertures are angled differently with respect to the central axis so as to induce opposing rotational flow of gases about the central axis; and a tapered bottom surface extending from the lower portion of the central channel to a peripheral portion of the chamber lid assembly.

    METHOD AND APPARATUS FOR IMPROVING GAS FLOW IN A SUBSTRATE PROCESSING CHAMBER
    6.
    发明申请
    METHOD AND APPARATUS FOR IMPROVING GAS FLOW IN A SUBSTRATE PROCESSING CHAMBER 审中-公开
    用于改善衬底加工室中气体流动的方法和装置

    公开(公告)号：US20150345019A1

    公开(公告)日：2015-12-03

    申请号：US14291807

    申请日：2014-05-30

    Applicant: Applied Materials, Inc.

    Inventor： XIAOXIONG YUAN ,  KARTIK SHAH ,  DHRITIMAN SUBHA KASHYAP ,  UMESH M. KELKAR ,  DIEN-YEH WU ,  MUHAMMAD M. RASHEED

    IPC: C23C16/455 ,  C23C16/458 ,  C23C16/08

    CPC classification number: C23C16/45544 ,  C23C16/08 ,  C23C16/34 ,  C23C16/45502 ,  C23C16/458

    Abstract: Embodiments of methods and apparatus for improving gas flow in a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body and a chamber lid defining an interior volume; a substrate support disposed within the interior volume and having a support surface to support a substrate; a gas passageway disposed in the lid opposite the substrate support to supply a gas mixture to the interior volume, the gas passageway including a first portion and a second portion; a first gas inlet disposed in the first portion to supply a first gas to the first portion of the gas passageway; and a second gas inlet disposed in the second portion to supply a second gas to the second portion.

    Abstract translation: 本文提供了用于改善衬底处理室中的气体流动的方法和装置的实施例。 在一些实施例中，衬底处理室包括：室主体和限定内部容积的室盖; 衬底支撑件，其设置在所述内部容积内并具有支撑表面以支撑衬底; 气体通道，设置在与基板支撑件相对的盖中，以将气体混合物供应到内部空间，气体通道包括第一部分和第二部分; 设置在第一部分中以将第一气体供应到气体通道的第一部分的第一气体入口; 以及设置在所述第二部分中以将第二气体供应到所述第二部分的第二气体入口。

    ATOMIC LAYER DEPOSITION CHAMBER WITH THERMAL LID
    9.
    发明申请
    ATOMIC LAYER DEPOSITION CHAMBER WITH THERMAL LID 审中-公开
    原子层沉积室与热引线

    公开(公告)号：US20160097119A1

    公开(公告)日：2016-04-07

    申请号：US14507780

    申请日：2014-10-06

    Applicant: APPLIED MATERIALS, INC.

    Inventor： ANQING CUI ,  FARUK GUNGOR ,  DIEN-YEH WU ,  VIKAS JANGRA ,  MUHAMMAD M. RASHEED ,  WEI V. TANG ,  YIXIONG YANG ,  XIAOXIONG YUAN ,  KYOUNG-HO BU ,  SRINIVAS GANDIKOTA ,  YU CHANG ,  WILLIAM W. KUANG

    IPC: C23C16/44 ,  C23C16/46 ,  B08B7/00 ,  C23C16/455

    CPC classification number: C23C16/4405 ,  C23C16/452 ,  C23C16/45506 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4558 ,  H01J37/32357 ,  H01J37/32522 ,  H01J37/32862

    Abstract: Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.

    Abstract translation: 本文提供了用于清洁原子层沉积室的方法和装置。 在一些实施例中，腔室盖组件包括：壳体，其包围沿着中心轴线延伸并具有上部和下部的中心通道; 盖板，其联接到壳体并且具有轮廓的底表面，其从耦合到中心通道的下部的中心开口向下和向外延伸到盖板的周边部分; 第一加热元件，用于加热中心通道; 第二加热元件，用于加热盖板的底面; 流体耦合到中央通道的远程等离子体源; 以及耦合在所述远程等离子体源和所述壳体之间的隔离套环，其中所述隔离套环具有延伸穿过所述隔离套环的内部通道，以流体地耦合所述远程等离子体源和所述中央通道。

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