公开(公告)号：US20190078210A1

公开(公告)日：2019-03-14

申请号：US15702234

申请日：2017-09-12

Applicant: APPLIED MATERIALS, INC.

Inventor： FARUK GUNGOR ,  DIEN-YEH WU ,  JOEL M. HUSTON ,  MEI CHANG ,  XIAOXIONG YUAN ,  KAZUYA DAITO ,  AVGERINOS V. GELATOS ,  TAKASHI KURATOMI ,  YU CHANG ,  BIN CAO

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/458 ,  C23C16/505

Abstract: Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.

公开(公告)号：US20190382895A1

公开(公告)日：2019-12-19

申请号：US16520646

申请日：2019-07-24

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAOXIONG YUAN ,  YU LEI ,  YI XU ,  KAZUYA DAITO ,  PINGYAN LEI ,  DIEN-YEH WU ,  UMESH M. KELKAR ,  VIKASH BANTHIA

IPC: C23C16/455

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

公开(公告)号：US20180347043A1

公开(公告)日：2018-12-06

申请号：US15663734

申请日：2017-07-29

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAOXIONG YUAN ,  YU LEI ,  YI XU ,  KAZUYA DAITO ,  PINGYAN LEI ,  DIEN-YEH WU ,  UMESH M. KELKAR ,  VIKASH BANTHIA

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/45508 ,  C23C16/45536 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/67017

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

公开(公告)号：US20200176247A1

公开(公告)日：2020-06-04

申请号：US16699712

申请日：2019-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： LUPING LI ,  SHIH CHUNG CHEN ,  KAZUYA DAITO ,  LIN DONG ,  ZHEBO CHEN ,  YIXIONG YANG ,  STEVEN HUNG

IPC: H01L21/02 ,  H01L21/311

Abstract: Methods and apparatus for forming a semiconductor structure with a scaled effective oxide thickness is disclosed. In embodiments, a method includes depositing amorphous silicon capping layer having a first surface atop a first surface of a titanium nitride (TiN) layer, wherein the titanium nitride layer is atop a first surface of a high-k dielectric layer disposed within a film stack; contacting the first surface of the amorphous silicon capping layer with a nitrogen containing gas; and annealing the film stack.

公开(公告)号：US20170148670A1

公开(公告)日：2017-05-25

申请号：US15358690

申请日：2016-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： YU LEI ,  VIKASH BANTHIA ,  KAI WU ,  XINYU FU ,  YI XU ,  KAZUYA DAITO ,  FEIYUE MA ,  PULKIT AGARWAL ,  CHI-CHOU LIN ,  DIEN-YEH WU ,  GUOQIANG JIAN ,  WEI V. TANG ,  JONATHAN BAKKE ,  MEI CHANG ,  SUNDAR RAMAMURTHY

IPC: H01L21/768 ,  C23C16/52 ,  C23C16/455 ,  C23C16/46 ,  H01L21/311 ,  C23C16/44

CPC classification number: H01L21/76843 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  C23C16/08 ,  C23C16/4401 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

公开(公告)号：US20150294906A1

公开(公告)日：2015-10-15

申请号：US14300773

申请日：2014-06-10

Applicant: APPLIED MATERIALS, INC.

Inventor： LIQI WU ,  SANG HO YU ,  KAZUYA DAITO ,  KIE JIN PARK ,  KAI WU ,  DAVID THOMPSON

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  C23C16/045 ,  C23C16/06 ,  C23C16/45536 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876

Abstract: Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.

Abstract translation: 本文提供了用于生产中间线（MOL）应用的金属有机钨的方法。 在一些实施例中，处理衬底的方法包括向处理室提供衬底，其中衬底包括形成在衬底的电介质层的第一表面中的特征; 将衬底暴露于由包括金属有机钨前体的第一气体形成的等离子体，以在该介电层的顶部和特征内形成钨阻挡层，其中在形成钨阻挡层期间处理室的温度小于约 225摄氏度; 以及在所述钨阻挡层上沉积钨填充层以将所述特征填充到所述第一表面。