公开(公告)号：US20170148670A1

公开(公告)日：2017-05-25

申请号：US15358690

申请日：2016-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： YU LEI ,  VIKASH BANTHIA ,  KAI WU ,  XINYU FU ,  YI XU ,  KAZUYA DAITO ,  FEIYUE MA ,  PULKIT AGARWAL ,  CHI-CHOU LIN ,  DIEN-YEH WU ,  GUOQIANG JIAN ,  WEI V. TANG ,  JONATHAN BAKKE ,  MEI CHANG ,  SUNDAR RAMAMURTHY

IPC: H01L21/768 ,  C23C16/52 ,  C23C16/455 ,  C23C16/46 ,  H01L21/311 ,  C23C16/44

CPC classification number: H01L21/76843 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  C23C16/08 ,  C23C16/4401 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

公开(公告)号：US20190382895A1

公开(公告)日：2019-12-19

申请号：US16520646

申请日：2019-07-24

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAOXIONG YUAN ,  YU LEI ,  YI XU ,  KAZUYA DAITO ,  PINGYAN LEI ,  DIEN-YEH WU ,  UMESH M. KELKAR ,  VIKASH BANTHIA

IPC: C23C16/455

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

公开(公告)号：US20190057863A1

公开(公告)日：2019-02-21

申请号：US16104352

申请日：2018-08-17

Applicant: APPLIED MATERIALS, INC.

Inventor： YIXIONG YANG ,  PAUL F. MA ,  WEI V. TANG ,  WENYU ZHANG ,  SHIH CHUNG CHEN ,  CHEN HAN LIN ,  CHI-CHOU LIN ,  YI XU ,  YU LEI ,  NAOMI YOSHIDA ,  LIN DONG ,  SIDDARTH KRISHNAN

IPC: H01L21/02 ,  H01L29/40 ,  H01L21/28

Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

公开(公告)号：US20180347043A1

公开(公告)日：2018-12-06

申请号：US15663734

申请日：2017-07-29

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAOXIONG YUAN ,  YU LEI ,  YI XU ,  KAZUYA DAITO ,  PINGYAN LEI ,  DIEN-YEH WU ,  UMESH M. KELKAR ,  VIKASH BANTHIA

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/45508 ,  C23C16/45536 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/67017

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.