公开(公告)号：US20190057863A1

公开(公告)日：2019-02-21

申请号：US16104352

申请日：2018-08-17

Applicant: APPLIED MATERIALS, INC.

Inventor： YIXIONG YANG ,  PAUL F. MA ,  WEI V. TANG ,  WENYU ZHANG ,  SHIH CHUNG CHEN ,  CHEN HAN LIN ,  CHI-CHOU LIN ,  YI XU ,  YU LEI ,  NAOMI YOSHIDA ,  LIN DONG ,  SIDDARTH KRISHNAN

IPC: H01L21/02 ,  H01L29/40 ,  H01L21/28

Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

公开(公告)号：US20200176247A1

公开(公告)日：2020-06-04

申请号：US16699712

申请日：2019-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： LUPING LI ,  SHIH CHUNG CHEN ,  KAZUYA DAITO ,  LIN DONG ,  ZHEBO CHEN ,  YIXIONG YANG ,  STEVEN HUNG

IPC: H01L21/02 ,  H01L21/311

Abstract: Methods and apparatus for forming a semiconductor structure with a scaled effective oxide thickness is disclosed. In embodiments, a method includes depositing amorphous silicon capping layer having a first surface atop a first surface of a titanium nitride (TiN) layer, wherein the titanium nitride layer is atop a first surface of a high-k dielectric layer disposed within a film stack; contacting the first surface of the amorphous silicon capping layer with a nitrogen containing gas; and annealing the film stack.