公开(公告)号：US20200176247A1

公开(公告)日：2020-06-04

申请号：US16699712

申请日：2019-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： LUPING LI ,  SHIH CHUNG CHEN ,  KAZUYA DAITO ,  LIN DONG ,  ZHEBO CHEN ,  YIXIONG YANG ,  STEVEN HUNG

IPC: H01L21/02 ,  H01L21/311

Abstract: Methods and apparatus for forming a semiconductor structure with a scaled effective oxide thickness is disclosed. In embodiments, a method includes depositing amorphous silicon capping layer having a first surface atop a first surface of a titanium nitride (TiN) layer, wherein the titanium nitride layer is atop a first surface of a high-k dielectric layer disposed within a film stack; contacting the first surface of the amorphous silicon capping layer with a nitrogen containing gas; and annealing the film stack.