公开(公告)号：US20200176247A1

公开(公告)日：2020-06-04

申请号：US16699712

申请日：2019-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： LUPING LI ,  SHIH CHUNG CHEN ,  KAZUYA DAITO ,  LIN DONG ,  ZHEBO CHEN ,  YIXIONG YANG ,  STEVEN HUNG

IPC: H01L21/02 ,  H01L21/311

Abstract: Methods and apparatus for forming a semiconductor structure with a scaled effective oxide thickness is disclosed. In embodiments, a method includes depositing amorphous silicon capping layer having a first surface atop a first surface of a titanium nitride (TiN) layer, wherein the titanium nitride layer is atop a first surface of a high-k dielectric layer disposed within a film stack; contacting the first surface of the amorphous silicon capping layer with a nitrogen containing gas; and annealing the film stack.

公开(公告)号：US20190326120A1

公开(公告)日：2019-10-24

申请号：US16381776

申请日：2019-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Guoqiang JIAN ,  WEI TANG ,  CHI-CHOU LIN ,  PAUL MA ,  YIXIONG YANG ,  MEI CHANG ,  WENYI LIU

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/02 ,  H01L29/49

Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.

公开(公告)号：US20190057863A1

公开(公告)日：2019-02-21

申请号：US16104352

申请日：2018-08-17

Applicant: APPLIED MATERIALS, INC.

Inventor： YIXIONG YANG ,  PAUL F. MA ,  WEI V. TANG ,  WENYU ZHANG ,  SHIH CHUNG CHEN ,  CHEN HAN LIN ,  CHI-CHOU LIN ,  YI XU ,  YU LEI ,  NAOMI YOSHIDA ,  LIN DONG ,  SIDDARTH KRISHNAN

IPC: H01L21/02 ,  H01L29/40 ,  H01L21/28

Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

公开(公告)号：US20160097119A1

公开(公告)日：2016-04-07

申请号：US14507780

申请日：2014-10-06

Applicant: APPLIED MATERIALS, INC.

Inventor： ANQING CUI ,  FARUK GUNGOR ,  DIEN-YEH WU ,  VIKAS JANGRA ,  MUHAMMAD M. RASHEED ,  WEI V. TANG ,  YIXIONG YANG ,  XIAOXIONG YUAN ,  KYOUNG-HO BU ,  SRINIVAS GANDIKOTA ,  YU CHANG ,  WILLIAM W. KUANG

IPC: C23C16/44 ,  C23C16/46 ,  B08B7/00 ,  C23C16/455

CPC classification number: C23C16/4405 ,  C23C16/452 ,  C23C16/45506 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4558 ,  H01J37/32357 ,  H01J37/32522 ,  H01J37/32862

Abstract: Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.

Abstract translation: 本文提供了用于清洁原子层沉积室的方法和装置。 在一些实施例中，腔室盖组件包括：壳体，其包围沿着中心轴线延伸并具有上部和下部的中心通道; 盖板，其联接到壳体并且具有轮廓的底表面，其从耦合到中心通道的下部的中心开口向下和向外延伸到盖板的周边部分; 第一加热元件，用于加热中心通道; 第二加热元件，用于加热盖板的底面; 流体耦合到中央通道的远程等离子体源; 以及耦合在所述远程等离子体源和所述壳体之间的隔离套环，其中所述隔离套环具有延伸穿过所述隔离套环的内部通道，以流体地耦合所述远程等离子体源和所述中央通道。