公开(公告)号：US20190382895A1

公开(公告)日：2019-12-19

申请号：US16520646

申请日：2019-07-24

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAOXIONG YUAN ,  YU LEI ,  YI XU ,  KAZUYA DAITO ,  PINGYAN LEI ,  DIEN-YEH WU ,  UMESH M. KELKAR ,  VIKASH BANTHIA

IPC: C23C16/455

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

公开(公告)号：US20180347043A1

公开(公告)日：2018-12-06

申请号：US15663734

申请日：2017-07-29

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAOXIONG YUAN ,  YU LEI ,  YI XU ,  KAZUYA DAITO ,  PINGYAN LEI ,  DIEN-YEH WU ,  UMESH M. KELKAR ,  VIKASH BANTHIA

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/45508 ,  C23C16/45536 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/67017

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

公开(公告)号：US20160300731A1

公开(公告)日：2016-10-13

申请号：US15091951

申请日：2016-04-06

Applicant: APPLIED MATERIALS, INC.

Inventor： KAI WU ,  VIKASH BANTHIA

IPC: H01L21/3213 ,  H01L21/3205 ,  H01L21/768

CPC classification number: H01L21/32136 ,  H01L21/28556 ,  H01L21/76877

Abstract: A method of controlling an etch profile includes introducing a tungsten containing gas into a processing chamber; depositing a first tungsten film lining sidewalls of a feature formed in a substrate using the tungsten containing gas in the processing chamber; and treating the first tungsten film in the processing chamber using the tungsten containing gas until a particular etch profile is attained by repeatedly alternating between etching the first tungsten film for a first interval and stopping the etching of the first tungsten film for a second interval by at least one of purging the tungsten containing gas from the process chamber or turning off a power supply that powers the etching of the first tungsten film.

Abstract translation: 控制蚀刻轮廓的方法包括将含钨气体引入到处理室中; 在处理室中使用含钨气体沉积衬底中形成的特征的第一钨膜; 以及使用含钨气体处理处理室中的第一钨膜，直到通过在第一间隔刻蚀第一钨膜之间重复交替进行特定蚀刻轮廓，并且通过在第二间隔处停止第一钨膜的蚀刻而停止第二间隔的蚀刻 从处理室清除含钨气体的至少一个，或者关闭对第一钨膜的蚀刻提供动力的电源。

公开(公告)号：US20190229007A1

公开(公告)日：2019-07-25

申请号：US16249716

申请日：2019-01-16

Applicant: APPLIED MATERIALS, INC.

Inventor： MUHANNAD MUSTAFA ,  MUHAMMAD M. RASHEED ,  YU LEI ,  AVGERINOS V. GELATOS ,  VIKASH BANTHIA ,  VICTOR H. CALDERON ,  SHI WEI TOH ,  YUNG-HSIN LEE ,  ANINDITA SEN

IPC: H01L21/687 ,  H01J37/32

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.

公开(公告)号：US20190157102A1

公开(公告)日：2019-05-23

申请号：US16196056

申请日：2018-11-20

Applicant: APPLIED MATERIALS, INC.

Inventor： GUOQIANG JIAN ,  WEI TANG ,  CHI-CHOU LIN ,  PAUL F. MA ,  KAI WU ,  VIKASH BANTHIA ,  MEI CHANG ,  JIA YE ,  WENYU ZHANG ,  JING ZHOU

IPC: H01L21/321 ,  H01L21/768 ,  H01L21/285

Abstract: Methods and apparatus for reducing and eliminating defects in tungsten film are disclosed herein. In the present disclosure, reducing or eliminating oxidation of a first surface of a tungsten film having a predetermined first thickness disposed upon a substrate and within a plurality of trenches is disclosed. The plurality of trenches include a predetermined depth, and a width of less than 20 nanometers. The predetermined first thickness of the tungsten film is substantially uniform throughout the plurality of trenches such that the predetermined first thickness of the tungsten film does not substantially change to a second thickness when the first surface is contacted with air or oxygen.

公开(公告)号：US20170148670A1

公开(公告)日：2017-05-25

申请号：US15358690

申请日：2016-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： YU LEI ,  VIKASH BANTHIA ,  KAI WU ,  XINYU FU ,  YI XU ,  KAZUYA DAITO ,  FEIYUE MA ,  PULKIT AGARWAL ,  CHI-CHOU LIN ,  DIEN-YEH WU ,  GUOQIANG JIAN ,  WEI V. TANG ,  JONATHAN BAKKE ,  MEI CHANG ,  SUNDAR RAMAMURTHY

IPC: H01L21/768 ,  C23C16/52 ,  C23C16/455 ,  C23C16/46 ,  H01L21/311 ,  C23C16/44

CPC classification number: H01L21/76843 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  C23C16/08 ,  C23C16/4401 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.