公开(公告)号：US20190229007A1

公开(公告)日：2019-07-25

申请号：US16249716

申请日：2019-01-16

Applicant: APPLIED MATERIALS, INC.

Inventor： MUHANNAD MUSTAFA ,  MUHAMMAD M. RASHEED ,  YU LEI ,  AVGERINOS V. GELATOS ,  VIKASH BANTHIA ,  VICTOR H. CALDERON ,  SHI WEI TOH ,  YUNG-HSIN LEE ,  ANINDITA SEN

IPC: H01L21/687 ,  H01J37/32

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.

公开(公告)号：US20200044152A1

公开(公告)日：2020-02-06

申请号：US16525051

申请日：2019-07-29

Applicant: APPLIED MATERIALS, INC.

Inventor： MINRUI YU ,  ANINDITA SEN ,  VIBHU JINDAL ,  MICHEL FREI ,  MAHENDRA PAKALA ,  MEHUL NAIK ,  NICOLAS BREIL ,  MICHAEL CHUDZIK

IPC: H01L45/00 ,  C23C14/34 ,  C23C14/14 ,  C23C14/08

Abstract: Embodiments of methods for depositing doped transition metal oxides are provided herein. In some embodiments, a method of depositing a doped transition metal oxide layer includes: sputtering a first target comprising a transition metal while providing a source of oxygen atoms; sputtering a second target comprising a dopant element; and forming a doped transition metal oxide layer on a substrate from the sputtered transition metal, oxygen atoms, and dopant element. The first target can be formed from a transition metal or a transition metal oxide.