SUBSTRATE SUPPORT FOR PLASMA ETCH OPERATIONS
    1.
    发明申请
    SUBSTRATE SUPPORT FOR PLASMA ETCH OPERATIONS 审中-公开
    基板支持等离子体蚀刻操作

    公开(公告)号:US20140262043A1

    公开(公告)日:2014-09-18

    申请号:US13798028

    申请日:2013-03-12

    Abstract: Methods and apparatus for processing substrates are disclosed herein. In some embodiments, a substrate support to support a substrate in a processing chamber includes a dielectric insulator plate; a conductive plate supported on the dielectric insulator plate, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein an edge portion of the conductive plate tapers in a radially outward direction; and a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductor plate.

    Abstract translation: 本文公开了处理衬底的方法和设备。 在一些实施例中,用于在处理室中支撑衬底的衬底支撑件包括介电绝缘板; 所述导电板包括顶表面和底表面,所述导电板限定所述顶表面和所述底表面之间的厚度,其中所述导电板的边缘部分在径向向外的方向上逐渐变细; 以及电介质板,其包括设置在所述导体板的顶表面上的衬底支撑表面。

    METHODS AND APPARATUS FOR REDUCING SPUTTERING OF A GROUNDED SHIELD IN A PROCESS CHAMBER
    2.
    发明申请
    METHODS AND APPARATUS FOR REDUCING SPUTTERING OF A GROUNDED SHIELD IN A PROCESS CHAMBER 审中-公开
    减少过程室中接地护盾溅射的方法和装置

    公开(公告)号:US20140262764A1

    公开(公告)日:2014-09-18

    申请号:US13798021

    申请日:2013-03-12

    Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.

    Abstract translation: 本文提供了用于物理气相沉积的方法和装置。 在一些实施例中,用于物理气相沉积室的工艺组件屏蔽件可以包括具有限定中心开口的一个或多个侧壁的导电体,其中主体具有一个或多个内表面的表面面积的比率 更多侧壁到一个或多个侧壁的高度为约2至约3。

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