公开(公告)号：US20150345019A1

公开(公告)日：2015-12-03

申请号：US14291807

申请日：2014-05-30

Applicant: Applied Materials, Inc.

Inventor： XIAOXIONG YUAN ,  KARTIK SHAH ,  DHRITIMAN SUBHA KASHYAP ,  UMESH M. KELKAR ,  DIEN-YEH WU ,  MUHAMMAD M. RASHEED

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/08

CPC classification number: C23C16/45544 ,  C23C16/08 ,  C23C16/34 ,  C23C16/45502 ,  C23C16/458

Abstract: Embodiments of methods and apparatus for improving gas flow in a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body and a chamber lid defining an interior volume; a substrate support disposed within the interior volume and having a support surface to support a substrate; a gas passageway disposed in the lid opposite the substrate support to supply a gas mixture to the interior volume, the gas passageway including a first portion and a second portion; a first gas inlet disposed in the first portion to supply a first gas to the first portion of the gas passageway; and a second gas inlet disposed in the second portion to supply a second gas to the second portion.

Abstract translation: 本文提供了用于改善衬底处理室中的气体流动的方法和装置的实施例。 在一些实施例中，衬底处理室包括：室主体和限定内部容积的室盖; 衬底支撑件，其设置在所述内部容积内并具有支撑表面以支撑衬底; 气体通道，设置在与基板支撑件相对的盖中，以将气体混合物供应到内部空间，气体通道包括第一部分和第二部分; 设置在第一部分中以将第一气体供应到气体通道的第一部分的第一气体入口; 以及设置在所述第二部分中以将第二气体供应到所述第二部分的第二气体入口。