公开(公告)号：US12001149B2

公开(公告)日：2024-06-04

申请号：US17428897

申请日：2020-01-24

Applicant: ASML Netherlands B.V.

Inventor： Marcus Adrianus Van De Kerkhof

IPC: G03F7/00 ,  G03F1/38 ,  G03F1/82 ,  H01L21/67

CPC classification number: G03F7/70925 ,  G03F1/38 ,  G03F1/82 ,  H01L21/67028

Abstract: A method of protecting a component of a lithographic apparatus, the method including the steps of: providing a protective cover which is shaped to protect at least part of said component, the protective cover having a contact surface which is arranged to adhere to a first surface of at least part of said lithographic apparatus or said component; and bringing the protective cover into proximity with the component so as to cause the contact surface to adhere to the lithographic apparatus or said component and remain adhered without the application of external force. It is also provided a patterning device for use in a lithographic apparatus and a lithographic apparatus.

公开(公告)号：US11999645B2

公开(公告)日：2024-06-04

申请号：US17287015

申请日：2019-10-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Robbert Edgar Van Leeuwen ,  Amir Abdolvand

IPC: C03B37/00 ,  C03B37/012 ,  C03B37/027 ,  C03C25/68 ,  G01N21/956 ,  G02F1/35 ,  G02F1/365 ,  G03F7/00

CPC classification number: C03B37/0122 ,  C03B37/01228 ,  C03B37/02781 ,  C03C25/68 ,  G01N21/956 ,  G02F1/3528 ,  G02F1/365 ,  G03F7/70316 ,  C03B2203/16 ,  C03B2203/42

Abstract: An optical fiber, manufacturing intermediate for forming an optical fiber and a method for forming an optical fiber. The method includes providing a manufacturing intermediate having an elongate body and having an aperture extending through the elongate body along an axial dimension of the elongate body, a boundary of the aperture defining an internal surface of the manufacturing intermediate. The method further includes etching the internal surface of the manufacturing intermediate using an etching substance, and drawing the manufacturing intermediate along the axial dimension so as to form the optical fiber.

公开(公告)号：US11996267B2

公开(公告)日：2024-05-28

申请号：US17271667

申请日：2019-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Ruben Cornelis Maas ,  Alexey Olegovich Polyakov ,  Teis Johan Coenen

IPC: H01J37/304 ,  G03F7/00 ,  H01J37/147 ,  H01J37/302 ,  H01J37/317 ,  H01L21/263

CPC classification number: H01J37/304 ,  G03F7/70591 ,  H01J37/1474 ,  H01J37/3023 ,  H01J37/3174 ,  H01L21/263 ,  H01J2237/31755

Abstract: A particle beam apparatus includes an object table configured to hold a semiconductor substrate; a particle beam source configured to generate a particle beam; a detector configured to detect a response of the substrate caused by interaction of the particle beam with the substrate and to output a detector signal representative of the response; and a processing unit configured to: receive or determine a location of one or more defect target areas on the substrate; control the particle beam source to inspect the one or more defect target areas; identify one or more defects within the one or more defect target areas, based on the detector signal obtained during the inspection of the one or more defect target areas; control the particle beam source to repair the one or more defects.

公开(公告)号：US11994848B2

公开(公告)日：2024-05-28

申请号：US17601503

申请日：2020-03-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Johannes Onvlee ,  Arnaud Hubaux

IPC: G05B19/418

CPC classification number: G05B19/41885 ,  G05B2219/32335 ,  G05B2219/45031

Abstract: A method for configuring a semiconductor manufacturing process, the method including: providing an initial prediction model including a plurality of model parameters to one or more remote locations; receiving at least one updated model parameter from the one or more remote locations, the at least one model parameter is updated by training the initial prediction model with local data at the one or more remote locations; determining aggregated model parameters based on the at least one updated model parameter received from the one or more remote locations; and adjusting the initial prediction model based on the aggregated model parameters, the adjusted prediction model being operable to configure the semiconductor manufacturing process.

公开(公告)号：US11994845B2

公开(公告)日：2024-05-28

申请号：US17367901

申请日：2021-07-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Sarathi Roy ,  Edo Maria Hulsebos ,  Roy Werkman ,  Junru Ruan

IPC: G05B19/418 ,  G03F7/00 ,  G05B13/02 ,  G06N3/044

CPC classification number: G05B19/41875 ,  G03F7/70508 ,  G03F7/70525 ,  G05B13/027 ,  G05B19/41885 ,  G06N3/044 ,  G05B2219/33025 ,  G05B2219/45028 ,  G05B2219/45031

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

公开(公告)号：US20240160151A1

公开(公告)日：2024-05-16

申请号：US18280459

申请日：2022-03-04

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N. V.

Inventor： Willem Marie Julia Marcel COENE ,  Vasco Tomas TENNER ,  Hugo Augustinus Joseph CRAMER ,  Arie Jeffrrey DEN BOEF ,  Wouter Dick KOEK ,  Sergei SOKOLOV ,  Jeroen Johan Maarten VAN DE WIJDEVEN ,  Alexander Kenneth RAUB

IPC: G03H1/04 ,  G01N21/95 ,  G02B21/10 ,  G02B21/36 ,  G03H1/00 ,  G03H1/02 ,  G03H1/08

CPC classification number: G03H1/0486 ,  G01N21/9501 ,  G02B21/10 ,  G02B21/365 ,  G03H1/0866 ,  G03H2001/0038 ,  G03H2001/0044 ,  G03H2001/005 ,  G03H2001/0232 ,  G03H2001/0445 ,  G03H2001/0473 ,  G03H2210/62

Abstract: A method of correcting a holographic image, a processing device, a dark field digital holographic microscope, a metrology apparatus and an inspection apparatus. The method includes obtaining a holographic image; determining at least one attenuation function due to motion blur from the holographic image; and correcting the holographic image, or a portion thereof, using the at least one attenuation function.

公开(公告)号：US20240153732A1

公开(公告)日：2024-05-09

申请号：US18281272

申请日：2022-02-09

Applicant: ASML Netherlands B.V.

Inventor： Datong ZHANG ,  Chih-hung WANG ,  Oliver Desmond PATTERSON ,  Xiaohu TANG

IPC: H01J37/147 ,  H01J37/26

CPC classification number: H01J37/1474 ,  H01J37/263 ,  H01J37/265 ,  H01J2237/0048 ,  H01J2237/24592

Abstract: Apparatuses, systems, and methods for providing beams for using deflector control to control charging on a sample surface of charged particle beam systems. In some embodiments, a controller including circuitry configured to scan a plurality of nodes of the sample to charge the plurality of nodes; adjust a scan rate of a beam such that a quantity of charge deposited on each node of the plurality of nodes varies with respect to at least one other node; generate a plurality of images; and compare the plurality of images to enable detection of a defect associated with any of the plurality of nodes of the sample.

公开(公告)号：US11977336B2

公开(公告)日：2024-05-07

申请号：US17059771

申请日：2019-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Jen-Shiang Wang ,  Qian Zhao ,  Yunbo Guo ,  Yen-Wen Lu ,  Mu Feng ,  Qiang Zhang

IPC: G03F7/00

CPC classification number: G03F7/705 ,  G03F7/70441 ,  G03F7/70625 ,  G03F7/70655 ,  G03F7/706837

Abstract: A method for improving a process model for a patterning process, the method including obtaining a) a measured contour from an image capture device, and b) a simulated contour generated from a simulation of the process model. The method also includes aligning the measured contour with the simulated contour by determining an offset between the measured contour and the simulated contour. The process model is calibrated to reduce a difference, computed based on the determined offset, between the simulated contour and the measured contour.

公开(公告)号：US11977334B2

公开(公告)日：2024-05-07

申请号：US18089940

申请日：2022-12-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen Hsu ,  Christoph Rene Konrad Cebulla Hennerkes ,  Rafael C. Howell ,  Zhan Shi ,  Xiaoyang Jason Li ,  Frank Staals

IPC: G03F7/00

CPC classification number: G03F7/70266 ,  G03F7/705 ,  G03F7/7055

Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

公开(公告)号：US11977034B2

公开(公告)日：2024-05-07

申请号：US17194558

申请日：2021-03-08

Applicant: ASML Netherlands B.V.

Inventor： Wouter Lodewijk Elings ,  Franciscus Bernardus Maria Van Bilsen ,  Christianus Gerardus Maria De Mol ,  Everhardus Cornelis Mos ,  Hoite Pieter Theodoor Tolsma ,  Peter Ten Berge ,  Paul Jacques Van Wijnen ,  Leonardus Henricus Marie Verstappen ,  Gerald Dicker ,  Reiner Maria Jungblut ,  Chung-Hsun Li

IPC: G01B11/14 ,  G01B11/00 ,  G01B11/02 ,  G01B11/26 ,  G01N21/95 ,  G01N21/956 ,  G03F7/00 ,  G05B19/418 ,  H01L21/66

CPC classification number: G01N21/9501 ,  G01B11/002 ,  G01B11/02 ,  G01B11/14 ,  G01B11/26 ,  G01N21/956 ,  G01N21/95607 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70633 ,  G05B19/41875 ,  H01L22/20 ,  G05B2219/37224 ,  Y02P90/02

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.