公开(公告)号：US11977336B2

公开(公告)日：2024-05-07

申请号：US17059771

申请日：2019-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Jen-Shiang Wang ,  Qian Zhao ,  Yunbo Guo ,  Yen-Wen Lu ,  Mu Feng ,  Qiang Zhang

IPC: G03F7/00

CPC classification number: G03F7/705 ,  G03F7/70441 ,  G03F7/70625 ,  G03F7/70655 ,  G03F7/706837

Abstract: A method for improving a process model for a patterning process, the method including obtaining a) a measured contour from an image capture device, and b) a simulated contour generated from a simulation of the process model. The method also includes aligning the measured contour with the simulated contour by determining an offset between the measured contour and the simulated contour. The process model is calibrated to reduce a difference, computed based on the determined offset, between the simulated contour and the measured contour.

公开(公告)号：US11675274B2

公开(公告)日：2023-06-13

申请号：US16484582

申请日：2018-02-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Yongfa Fan ,  Leiwu Zheng ,  Mu Feng ,  Qian Zhao ,  Jen-Shiang Wang

IPC: G03F7/20 ,  G03F7/00 ,  G03F1/80 ,  H01L21/66

CPC classification number: G03F7/705 ,  G03F1/80 ,  G03F7/70625 ,  H01L22/34

Abstract: A method involving determining an etch bias for a pattern to be etched using an etch step of a patterning process based on an etch bias model, the etch bias model including a formula having a variable associated with a spatial property of the pattern or with an etch plasma species concentration of the etch step, and including a mathematical term including a natural exponential function to the power of a parameter that is fitted or based on an etch time of the etch step; and adjusting the patterning process based on the determined etch bias.

公开(公告)号：US20210208507A1

公开(公告)日：2021-07-08

申请号：US17059771

申请日：2019-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Jen-Shiang WANG ,  Qian Zhao ,  Yunbo GUO ,  Yen-Wen LU ,  Mu FENG ,  Qiang ZHANG

IPC: G03F7/20

Abstract: A method for improving a process model for a patterning process, the method including obtaining a) a measured contour from an image capture device, and b) a simulated contour generated from a simulation of the process model. The method also includes aligning the measured contour with the simulated contour by determining an offset between the measured contour and the simulated contour. The process model is calibrated to reduce a difference, computed based on the determined offset, between the simulated contour and the measured contour.

公开(公告)号：US11243473B2

公开(公告)日：2022-02-08

申请号：US16615207

申请日：2018-05-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng Wang ,  Qian Zhao

IPC: G03F7/20 ,  G03F1/86

Abstract: A method involving obtaining a simulation of a contour of a pattern to be formed on a substrate using a patterning process, determining a location of an evaluation point on the simulated contour of the pattern, the location spatially associated with a location of a corresponding evaluation point on a design layout for the pattern, and producing electronic information corresponding to a spatial bearing between the location of the evaluation point on the simulated contour and the location of the corresponding evaluation point on the design layout, wherein the information corresponding to the spatial bearing is configured for determining a location of an evaluation point on a measured image of at least part of the pattern, the evaluation point on the measured image spatially associated with the corresponding evaluation point on the design layout.