公开(公告)号：US20240258062A1

公开(公告)日：2024-08-01

申请号：US18560707

申请日：2021-05-27

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Shota AIDA ,  Hisayuki TAKASU ,  Kento HORINOUCHI

IPC: H01J37/08 ,  H01J37/04 ,  H01J37/305

CPC classification number: H01J37/08 ,  H01J37/045 ,  H01J37/3053 ,  H01J2237/04735 ,  H01J2237/24585

Abstract: In a state in which an ion beam from an ion source 101 is shielded by a shutter 102, an ion milling apparatus applies a discharge voltage Vd between an anode 203 and cathodes 201 and 202 and an acceleration voltage Va between the anode and an acceleration electrode 205 with respect to the ion source, and retracts the shutter by a shutter drive source 103 to a position where the ion beam is not shielded after any one of a discharge current flowing between the anode and the cathodes due to discharge and an ion beam current flowing caused by irradiation on the shutter the ion beam falls below a predetermined reference value.

公开(公告)号：US12009174B2

公开(公告)日：2024-06-11

申请号：US17651278

申请日：2022-02-16

Applicant: NUFLARE TECHNOLOGY, INC.

Inventor： Kazuhiro Kishi ,  Munehiro Ogasawara

IPC: H01J37/04 ,  H01J37/26 ,  H01J37/317

CPC classification number: H01J37/045 ,  H01J37/3174 ,  H01J37/26 ,  H01J2237/0435

Abstract: A blanking deflector according to an embodiment includes: a first electrode comprising a first insulator, a first material film coating all surfaces of the first insulator and having lower resistance than the first insulator, and a first low-resistance film coating part or all of surfaces of the first material film and having lower resistance than the first material film; and a second electrode comprising a second insulator, a second material film coating all surfaces of the second insulator and having lower resistance than the second insulator, and a second low-resistance film coating part or all of surfaces of the second material film and having lower resistance than the second material film, wherein the blanking deflector controls whether to irradiate a specimen with a charged particle beam by causing the charged particle beam to pass between the first electrode and the second electrode.

公开(公告)号：US11837429B2

公开(公告)日：2023-12-05

申请号：US17663442

申请日：2022-05-16

Applicant: Nuflare Technology, Inc.

Inventor： Shuji Yoshino

IPC: H01J37/04 ,  H01J37/317 ,  H01J37/147

CPC classification number: H01J37/045 ,  H01J37/1472 ,  H01J37/3177 ,  H01J2237/026 ,  H01J2237/0437 ,  H01J2237/1504

Abstract: A blanking aperture array unit according to the present embodiment includes a chip configured to control a charged particle beam by blanking control of switching whether to irradiate a target with the charged particle beam; a substrate having the chip mounted thereon; a wire configured to electrically connect pads on the chip to the substrate and transmit a control signal for the blanking control from the substrate to the chip through the pads; and a conductive covering member having a first end connected to the substrate and a second end located on the chip, the covering member being provided from the first end to the second end to cover the wire while maintaining electrical insulation from the wire, and at least two end sides of the second end of the covering member are nearer a central portion of the chip than locations of the pads on the chip.

公开(公告)号：US11804360B2

公开(公告)日：2023-10-31

申请号：US17778758

申请日：2020-11-04

Applicant: NuFlare Technology, Inc.

Inventor： Tsubasa Nanao ,  Hirofumi Morita ,  Takanao Touya

IPC: H01J37/304 ,  H01J37/12 ,  H01J37/14 ,  H01J37/317 ,  H01J37/04 ,  G03F7/00 ,  H01J37/09

CPC classification number: H01J37/304 ,  G03F7/7005 ,  G03F7/7055 ,  G03F7/70383 ,  H01J37/12 ,  H01J37/14 ,  H01J37/3177 ,  H01J37/045 ,  H01J37/09 ,  H01J2237/0435

Abstract: The present invention quickly calculates values of optimal excitation parameters which are set in lenses in multiple stages. A multi charged particle beam adjustment method includes forming a multi charged particle beam, calculating, for each of lenses in two or more stages disposed corresponding to object lenses in two or more stages, a first rate of change and a second rate of change in response to change in at least an excitation parameter, the first rate of change being a rate of change in a demagnification level of a beam image of the multi charged particle beam, the second rate of change being a rate of change in a rotation level of the beam image, and calculating a first amount of correction to the excitation parameter of each of the lenses based on an amount of correction to the demagnification level and the rotation level of the beam image, the first rate of change, and the second rate of change.

公开(公告)号：US11798778B2

公开(公告)日：2023-10-24

申请号：US17379815

申请日：2021-07-19

Applicant: ATTOLIGHT AG

Inventor： Christian Monachon ,  Matthew John Davies ,  Fabrice Grondin

IPC: H01J37/22 ,  H01J37/28 ,  H01J37/04

CPC classification number: H01J37/222 ,  H01J37/045 ,  H01J37/28 ,  H01J2237/2808

Abstract: Method for investigating samples by time-series emission of cathodoluminescence (CL) microscope having electron beam and light sensor. In discovery scan, changes caused by the electron beam are unknown, in an inspection scan changes have already been identified in similar sample. Discovery scan starts by setting parameters of the electron beam to irradiate at a first rate of dose; flushing the buffer of the light sensor; scanning the electron beam over an area of interest on the sample while collecting CL emission with the light sensor, while preventing any reading of the data from the buffer until the entire scanning has been completed; once the entire scanning has been completed, blanking the electron beam and interrogating the buffer to identify a first CL image; and then interrogating the buffer to fetch all remaining CL images and tagging all fetched CL images according to time sequence starting from the first CL image.

公开(公告)号：US11715618B2

公开(公告)日：2023-08-01

申请号：US17392758

申请日：2021-08-03

Applicant: FEI Company

Inventor： Yuchen Deng ,  Alexander Henstra ,  Peter Tiemeijer

IPC: H01J37/02 ,  H01J37/244 ,  H01J37/04

CPC classification number: H01J37/026 ,  H01J37/045 ,  H01J37/244 ,  H01J2237/0045 ,  H01J2237/2448

Abstract: Systems and methods for reducing the buildup of charge during the investigation of samples using charged particle beams, according to the present disclosure include irradiating a first portion of a sample during a first time period, wherein the irradiating the first portion of the sample causes a gradual accumulation of net charge in the first portion of the sample, generating imaging data based on emissions resultant from irradiating the first portion of the sample, and then irradiating a second portion of a sample holder for a second time period. The methods may further includes iteratively repeating the irradiation of the first portion and the second portion during imaging of the sample region. When more than one region of interest on the sample is to be investigated, the method may also include continuing to image additional portions of the sample by iteratively irradiating a region of interest on the sample and a corresponding portion of the sample holder.

公开(公告)号：US10020159B2

公开(公告)日：2018-07-10

申请号：US15384021

申请日：2016-12-19

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi Matsumoto ,  Tomohiro Iijima ,  Munehiro Ogasawara ,  Hideo Inoue ,  Ryoichi Yoshikawa

IPC: H01J37/317 ,  H01J37/04

CPC classification number: H01J37/045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/0435 ,  H01J2237/31771 ,  H01J2237/31774

Abstract: A multi charged particle beam writing method includes performing ON/OFF switching of a beam by an individual blanking system for the beam concerned, for each beam in multi-beams of charged particle beam, with respect to each time irradiation of irradiation of a plurality of times, by using a plurality of individual blanking systems that respectively perform beam ON/OFF control of a corresponding beam in the multi-beams, and performing blanking control, in addition to the performing ON/OFF switching of the beam for the each beam by the individual blanking system, with respect to the each time irradiation of the irradiation of the plurality of times, so that the beam is in an ON state during an irradiation time corresponding to irradiation concerned, by using a common blanking system that collectively performs beam ON/OFF control for a whole of the multi-beams.

公开(公告)号：US09991086B2

公开(公告)日：2018-06-05

申请号：US15273900

申请日：2016-09-23

Applicant: NuFlare Technology, Inc.

Inventor： Hirofumi Morita

IPC: H01J37/04 ,  H01J37/14 ,  H01J37/317

CPC classification number: H01J37/045 ,  H01J37/14 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453

Abstract: In one embodiment, a multi charged particle beam writing method includes performing blanking deflection on each of multiple beams using a plurality of individual blankers, and collectively performing blanking deflection on the multiple beams using a common blanker. The beams controlled in the beam ON state by the individual blankers and the common blanker pass through a hole at central part of a liming aperture member. The beams deflected in the beam OFF state by the individual blankers or the common blanker are deviated from the hole and are interrupted by the limiting aperture member. When one of the common blanker and the individual blanker deflects one of the beams to the beam OFF state while the other of them deflects the beam in the beam OFF state, the beam moves on the limiting aperture member such that the beam is away from the hole.

公开(公告)号：US09966229B2

公开(公告)日：2018-05-08

申请号：US15273864

申请日：2016-09-23

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi Matsumoto

IPC: H01J37/30

CPC classification number: H01J37/3007 ,  H01J37/045 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/032 ,  H01J2237/2007 ,  H01J2237/317

Abstract: In one embodiment, a supporting case includes a lower case member and an upper case member. The mounting substrate is pinched between a lower cylindrical supporting portion and a upper cylindrical supporting portion. Peripheral regions of the mounting substrate that are on a peripheral side with respect to a part pinched between the lower cylindrical supporting portion and the upper cylindrical supporting portion are positioned in a space defined by a bottom plate portion, a lower peripheral-wall portion, and the lower cylindrical supporting portion of the lower case member and a top lid portion, an upper peripheral-wall portion, and the upper cylindrical supporting portion of the upper case member.

公开(公告)号：US20180108514A1

公开(公告)日：2018-04-19

申请号：US15605308

申请日：2017-05-25

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Yinying Xiao-Li ,  Xuefeng Liu ,  John Fielden

IPC: H01J37/317 ,  H01J37/20 ,  H01J37/244 ,  H01J37/10 ,  H01J37/147 ,  H01J37/04 ,  H01J37/073

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/073 ,  H01J37/10 ,  H01J37/147 ,  H01J37/20 ,  H01J37/244 ,  H01J2237/0435

Abstract: A multi-column electron beam device includes an electron source comprising multiple field emitters fabricated on a surface of a silicon substrate. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitters. The field emitters can take various shapes including a pyramid, a cone, or a rounded whisker. Optional gate layers may be placed on the output surface near the field emitters. The field emitter may be p-type or n-type doped. Circuits may be incorporated into the wafer to control the emission current. A light source may be configured to illuminate the electron source and control the emission current. The multi-column electron beam device may be a multi-column electron beam lithography system configured to write a pattern on a sample.