公开(公告)号：US11782001B2

公开(公告)日：2023-10-10

申请号：US17537422

申请日：2021-11-29

Applicant: ATTOLIGHT AG

Inventor： Marc Fouchier ,  Christian Monachon

IPC: G01N23/2254 ,  H01J37/28

CPC classification number: G01N23/2254 ,  G01N2223/08 ,  G01N2223/418 ,  G01N2223/507 ,  G01N2223/6116

Abstract: A cathodoluminescence microscope and method are used to identify and classify dislocations within a semiconductor sample. At least two CL polarized images are concurrently obtained from the sample. The images are added together to obtain a total intensity image. A normalized difference of the images is taken to obtain a degree of polarization (DOP) image. The total intensity and DOP images are compared to differentiate between edge dislocations and screw dislocations within the sample. Edge dislocation density and screw dislocation density may then be calculated.

公开(公告)号：US20220020559A1

公开(公告)日：2022-01-20

申请号：US17379815

申请日：2021-07-19

Applicant: ATTOLIGHT AG

Inventor： Christian Monachon ,  Matthew John Davies ,  Fabrice Grondin

IPC: H01J37/22 ,  H01J37/04 ,  H01J37/28

Abstract: Method for investigating samples by time-series emission of cathodoluminescence (CL) microscope having electron beam and light sensor. In discovery scan, changes caused by the electron beam are unknown, in an inspection scan changes have already been identified in similar sample. Discovery scan starts by setting parameters of the electron beam to irradiate at a first rate of dose; flushing the buffer of the light sensor; scanning the electron beam over an area of interest on the sample while collecting CL emission with the light sensor, while preventing any reading of the data from the buffer until the entire scanning has been completed; once the entire scanning has been completed, blanking the electron beam and interrogating the buffer to identify a first CL image; and then interrogating the buffer to fetch all remaining CL images and tagging all fetched CL images according to time sequence starting from the first CL image.

公开(公告)号：US20240412938A1

公开(公告)日：2024-12-12

申请号：US18393329

申请日：2023-12-21

Applicant: ATTOLIGHT AG

Inventor： Nicolas Tappy ,  Christian Monachon ,  Anna Fontcuberta i Morral ,  Jean Berney

IPC: H01J37/073 ,  H01J37/12 ,  H01J37/22 ,  H01J37/26

Abstract: An electron emitter comprises a tapered-shaped emission tip having a base face and an apex opposite the base face, the emission tip consisting essentially of semiconductor material, the semiconductor material being partially doped n-type and partially doped p-type, wherein the base face is doped one of n-type or p-type and the apex is doped opposite type of the base face and a p-n junction is thereby formed at a position between the base face and the apex.

公开(公告)号：US11798778B2

公开(公告)日：2023-10-24

申请号：US17379815

申请日：2021-07-19

Applicant: ATTOLIGHT AG

Inventor： Christian Monachon ,  Matthew John Davies ,  Fabrice Grondin

IPC: H01J37/22 ,  H01J37/28 ,  H01J37/04

CPC classification number: H01J37/222 ,  H01J37/045 ,  H01J37/28 ,  H01J2237/2808

Abstract: Method for investigating samples by time-series emission of cathodoluminescence (CL) microscope having electron beam and light sensor. In discovery scan, changes caused by the electron beam are unknown, in an inspection scan changes have already been identified in similar sample. Discovery scan starts by setting parameters of the electron beam to irradiate at a first rate of dose; flushing the buffer of the light sensor; scanning the electron beam over an area of interest on the sample while collecting CL emission with the light sensor, while preventing any reading of the data from the buffer until the entire scanning has been completed; once the entire scanning has been completed, blanking the electron beam and interrogating the buffer to identify a first CL image; and then interrogating the buffer to fetch all remaining CL images and tagging all fetched CL images according to time sequence starting from the first CL image.

公开(公告)号：US20220178854A1

公开(公告)日：2022-06-09

申请号：US17537422

申请日：2021-11-29

Applicant: ATTOLIGHT AG

Inventor： Marc Fouchier ,  Christian Monachon

IPC: G01N23/2254

Abstract: A cathodoluminescence microscope and method are used to identify and classify dislocations within a semiconductor sample. At least two CL polarized images are concurrently obtained from the sample. The images are added together to obtain a total intensity image. A normalized difference of the images is taken to obtain a degree of polarization (DOP) image. The total intensity and DOP images are compared to differentiate between edge dislocations and screw dislocations within the sample. Edge dislocation density and screw dislocation density may then be calculated.