公开(公告)号：US11782001B2

公开(公告)日：2023-10-10

申请号：US17537422

申请日：2021-11-29

Applicant: ATTOLIGHT AG

Inventor： Marc Fouchier ,  Christian Monachon

IPC: G01N23/2254 ,  H01J37/28

CPC classification number: G01N23/2254 ,  G01N2223/08 ,  G01N2223/418 ,  G01N2223/507 ,  G01N2223/6116

Abstract: A cathodoluminescence microscope and method are used to identify and classify dislocations within a semiconductor sample. At least two CL polarized images are concurrently obtained from the sample. The images are added together to obtain a total intensity image. A normalized difference of the images is taken to obtain a degree of polarization (DOP) image. The total intensity and DOP images are compared to differentiate between edge dislocations and screw dislocations within the sample. Edge dislocation density and screw dislocation density may then be calculated.

公开(公告)号：US20220178854A1

公开(公告)日：2022-06-09

申请号：US17537422

申请日：2021-11-29

Applicant: ATTOLIGHT AG

Inventor： Marc Fouchier ,  Christian Monachon

IPC: G01N23/2254

Abstract: A cathodoluminescence microscope and method are used to identify and classify dislocations within a semiconductor sample. At least two CL polarized images are concurrently obtained from the sample. The images are added together to obtain a total intensity image. A normalized difference of the images is taken to obtain a degree of polarization (DOP) image. The total intensity and DOP images are compared to differentiate between edge dislocations and screw dislocations within the sample. Edge dislocation density and screw dislocation density may then be calculated.