公开(公告)号：US10020200B1

公开(公告)日：2018-07-10

申请号：US14966165

申请日：2015-12-11

Applicant: Multibeam Corporation

Inventor： Kevin M. Monahan ,  Theodore A. Prescop ,  Michael C. Smayling ,  David K. Lam

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/308 ,  H01L21/66

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods and systems for direct atomic layer etching and deposition on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform atomic layer etch and atomic layer deposition, expressing pattern with selected 3D-structure. Reducing the number of process steps in patterned atomic layer etch and deposition reduces manufacturing cycle time and increases yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding columns, and support superior, highly-configurable process execution and control.

公开(公告)号：US09679779B2

公开(公告)日：2017-06-13

申请号：US13797549

申请日：2013-03-12

Applicant: The Aerospace Corporation

Inventor： David P. Taylor ,  Margaret H. Abraham

IPC: H01L21/285 ,  B81C1/00 ,  C23C16/01 ,  C23C16/18 ,  C23C16/48 ,  H01L21/3065 ,  C23C16/04 ,  C23C16/46 ,  H01L27/13 ,  H01L49/02 ,  G01J5/02 ,  G02B5/28

CPC classification number: H01L21/28506 ,  B81B2203/0109 ,  B81C1/00373 ,  B81C2201/0176 ,  B81C2201/0188 ,  C23C16/01 ,  C23C16/04 ,  C23C16/18 ,  C23C16/46 ,  C23C16/481 ,  C23C16/483 ,  G01J5/024 ,  G02B5/285 ,  H01L21/3065 ,  H01L27/13 ,  H01L28/40 ,  H01L28/87

Abstract: Embodiments of the present invention provide systems and methods for depositing materials on either side of a freestanding film using selectively thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same. A freestanding film, which is suspended over a cavity defined in a substrate, is exposed to a fluidic CVD precursor that reacts to form a solid material when exposed to heat. The freestanding film is then selectively heated in the presence of the precursor. The CVD precursor preferentially deposits on the surface(s) of the freestanding film.

公开(公告)号：US09663357B2

公开(公告)日：2017-05-30

申请号：US14963362

申请日：2015-12-09

Applicant: Texas Instruments Incorporated

Inventor： Jie Mao ,  Hau Nguyen ,  Luu Nguyen ,  Anindya Poddar

IPC: H01L21/683 ,  B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00873 ,  B81B7/007 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2201/0292 ,  B81B2201/047 ,  B81B2207/07 ,  B81B2207/098 ,  B81C1/00333 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0159 ,  B81C2201/0181 ,  B81C2201/0188 ,  B81C2203/0136 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3121 ,  H01L24/19 ,  H01L2221/68359 ,  H01L2224/04105 ,  H01L2224/96 ,  H01L2924/3511

Abstract: A method for fabricating packaged semiconductor devices (100) with an open cavity (110a) in panel format; placing (process 201) on an adhesive carrier tape a panel-sized grid of metallic pieces having a flat pad (230) and symmetrically placed vertical pillars (231); attaching (process 202) semiconductor chips (101) with sensor systems face-down onto the tape; laminating (process 203) and thinning (process 204) low CTE insulating material (234) to fill gaps between chips and grid; turning over (process 205) assembly to remove tape; plasma-cleaning assembly front side, sputtering and patterning (process 206) uniform metal layer across assembly and optionally plating (process 209) metal layer to form rerouting traces and extended contact pads for assembly; laminating (process 212) insulating stiffener across panel; opening (process 213) cavities in stiffener to access the sensor system; and singulating (process 214) packaged devices by cutting metallic pieces.

公开(公告)号：US09567213B1

公开(公告)日：2017-02-14

申请号：US14827683

申请日：2015-08-17

Applicant: Texas Instruments Incorporated

Inventor： John Charles Ehmke ,  Virgil Cotoco Ararao

IPC: H01L21/00 ,  H01L21/44 ,  H01L21/31 ,  G02B6/12 ,  G02B5/124 ,  G09G3/34 ,  H01J5/00 ,  H01L23/02 ,  B81C1/00 ,  B81B7/00 ,  G02B26/08 ,  G02B6/42 ,  G02B26/00 ,  B82Y30/00

CPC classification number: B81B7/0038 ,  B81B2203/0315 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00293 ,  B81C2201/0108 ,  B81C2201/013 ,  B81C2201/0188 ,  B81C2201/0198 ,  B81C2201/053 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035 ,  B82Y30/00 ,  G02B6/4204 ,  G02B6/4208 ,  G02B6/4248 ,  G02B26/001 ,  G02B26/0833 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/039 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05109 ,  H01L2224/05123 ,  H01L2224/05138 ,  H01L2224/05163 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05562 ,  H01L2224/27462 ,  H01L2224/2747 ,  H01L2224/279 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/29109 ,  H01L2224/29144 ,  H01L2224/32058 ,  H01L2224/32227 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01074 ,  H01L2924/1461 ,  H01L2924/164 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/03 ,  H01L2924/01042 ,  H01L2924/01072 ,  H01L2924/01004 ,  H01L2224/83 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03462

Abstract: A hermetic package comprising a substrate (110) having a surface with a MEMS structure (101) of a first height (101a), the substrate hermetically sealed to a cap (120) forming a cavity over the MEMS structure; the cap attached to the substrate surface by a vertical stack (130) of metal layers adhering to the substrate surface and to the cap, the stack having a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance (140); the stack having a bottom first metal seed film (131a) adhering to the substrate and a bottom second metal seed film (131b) adhering to the bottom first seed film, both seed films of a first width (131c) and a common sidewall (138); further a top first metal seed film (132a) adhering to the cap and a top second metal seed film (132b) adhering to the top first seed film, both seed films with a second width (132c) smaller than the first width and a common sidewall (139); the bottom and top metal seed films tied to a metal layer (135) including gold-indium intermetallic compounds, layer (135) having a second height (133a) greater than the first height and encasing the seed films and common sidewalls.

Abstract translation: 一种密封包装，其包括具有具有第一高度（101a）的MEMS结构（101）的表面的基底（110），所述基底被气密地密封到在所述MEMS结构上形成空腔的帽（120） 所述盖通过粘附到所述基板表面和所述盖的金属层的垂直堆叠（130）附接到所述基板表面，所述堆叠具有围绕所述MEMS结构的连续轮廓，同时与所述MEMS结构隔开距离（140）; 所述堆叠具有附着到所述基板的底部第一金属种子膜（131a）和粘附到所述底部第一种子膜的底部第二金属种子膜（131b），具有第一宽度（131c）和公共侧壁（138）的两种种子膜 ）; 另外，粘附到盖的顶部第一金属种子膜（132a）和粘附到顶部第一种子膜的顶部第二金属种子膜（132b），具有小于第一宽度的第二宽度（132c）的两种种子膜和共同的 侧壁（139）; 连接到包括金 - 铟金属间化合物的金属层（135）的底部和顶部金属种子膜，具有大于第一高度的第二高度（133a）的层（135）并且包围种子膜和共同侧壁。

公开(公告)号：US09321634B2

公开(公告)日：2016-04-26

申请号：US14608841

申请日：2015-01-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： William J. Gallagher ,  Eugene J. O'Sullivan ,  Naigang Wang

IPC: H01L21/00 ,  B81C1/00 ,  H01L43/14 ,  B81B3/00 ,  H01L43/10 ,  H01L43/12 ,  H01L49/02 ,  H01F41/04

CPC classification number: B81C1/00373 ,  B81B3/0021 ,  B81B2201/038 ,  B81B2203/0118 ,  B81C1/00142 ,  B81C1/00706 ,  B81C2201/0188 ,  H01F41/046 ,  H01L28/10 ,  H01L43/10 ,  H01L43/12 ,  H01L43/14

Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.

公开(公告)号：US20140264676A1

公开(公告)日：2014-09-18

申请号：US13796496

申请日：2013-03-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： William J. Gallagher ,  Eugene J. O'Sullivan ,  Naigang Wang

IPC: H01L43/12 ,  H01L43/10

CPC classification number: B81C1/00373 ,  B81B3/0021 ,  B81B2201/038 ,  B81B2203/0118 ,  B81C1/00142 ,  B81C1/00706 ,  B81C2201/0188 ,  H01F41/046 ,  H01L28/10 ,  H01L43/10 ,  H01L43/12 ,  H01L43/14

Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.

Abstract translation: 公开了一种微机电装置及其制造方法。 在硅衬底上形成牺牲层。 在牺牲层的顶表面上形成金属层。 将软磁性材料无电沉积在金属层上以制造微机电装置。 除去牺牲层以产生与硅衬底分离的金属束。

公开(公告)号：US20180265353A1

公开(公告)日：2018-09-20

申请号：US15761192

申请日：2015-11-05

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Chien-Hua Chen ,  Devin A. Mourey ,  Michael G. Groh

IPC: B81C99/00 ,  B81C1/00 ,  B41J2/155 ,  B41J2/16

CPC classification number: B81C99/008 ,  B01L3/0268 ,  B41J2/155 ,  B41J2/1603 ,  B41J2/1637 ,  B41J2202/19 ,  B41J2202/20 ,  B41J2202/21 ,  B81B2201/052 ,  B81B2201/058 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C1/00309 ,  B81C2201/0188 ,  B81C2203/0154

Abstract: Examples include a device comprising integrated circuit dies molded into a molded panel. The molded panel has three-dimensional features formed therein, where the three-dimensional features are associated with the integrated circuit dies. To form the three-dimensional features, a feature formation material is deposited, the molded panel is formed, and the feature formation material is removed.

公开(公告)号：US20180038890A1

公开(公告)日：2018-02-08

申请号：US15670281

申请日：2017-08-07

Applicant: Khalifa University of Science and Technology

Inventor： Marcus S. Dahlem ,  Evgenii Demidov ,  Anatol Khilo

IPC: G01P15/13 ,  G01C19/56 ,  G01P15/097

CPC classification number: G01P15/131 ,  B81B2201/0235 ,  B81B2201/047 ,  B81C1/00246 ,  B81C2201/0143 ,  B81C2201/0188 ,  B81C2203/0714 ,  G01C19/56 ,  G01C19/66 ,  G01P15/093 ,  G01P15/097

Abstract: A method of forming a photonic inertial sensor includes providing a substrate having an insulation layer and a silicon layer on the insulation layer opposite the substrate; etching the silicon layer to form a silicon proof mass for the photonic inertial sensor; etching at least a portion of the insulation layer underneath the silicon proof mass to suspend the silicon proof mass; and depositing a high-density mass-increasing layer on the silicon proof mass to thereby increase the mass of the silicon proof mass.

公开(公告)号：US09673114B1

公开(公告)日：2017-06-06

申请号：US14695767

申请日：2015-04-24

Applicant: Multibeam Corporation

Inventor： David K. Lam ,  Kevin M. Monahan ,  Michael C. Smayling ,  Theodore A. Prescop

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/26 ,  H01J37/305 ,  H01J37/30

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be removed from a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beams. Reducing the number of process steps, and eliminating lithography steps, in localized material removal has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material removal allows for controlled variation of removal rate and enables creation of 3D structures or profiles. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted substrate processing.

公开(公告)号：US20160236929A1

公开(公告)日：2016-08-18

申请号：US15033069

申请日：2013-11-19

Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION SOGANG UNIVERSITY

Inventor： Jung Chul Lee ,  Il Lee

IPC: B81C1/00 ,  B81B3/00 ,  G01D11/30 ,  B81C99/00

CPC classification number: B81C1/0015 ,  B29C35/0805 ,  B29C64/135 ,  B29C2035/0827 ,  B29K2071/02 ,  B29K2105/0061 ,  B29K2995/0027 ,  B29L2031/756 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y80/00 ,  B81B3/0021 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C99/0025 ,  B81C2201/0188 ,  B81C2201/034 ,  B81C2203/038 ,  G01D11/30 ,  G01Q70/14 ,  G01Q70/16

Abstract: Disclosed is a method for manufacturing a microcantilever having a predetermined thickness that includes forming a liquid synthetic resin for cantilevers to a thickness corresponding to the thickness of the microcantilever on an upper surface of a base block having an adhesive base and a non-adhesive base, and curing the liquid synthetic resin for cantilevers via a boundary between the adhesive base and the non-adhesive base, wherein the adhesive base has stronger adhesivity to the cured synthetic resin for cantilevers than the non-adhesive base.

Abstract translation: 公开了一种具有预定厚度的微悬臂梁的制造方法，其包括在具有粘合剂基底和非粘性基底的基座的上表面上形成用于悬臂的液体合成树脂至与微悬臂梁的厚度相对应的厚度， 并且通过粘合剂基部和非粘合剂基部之间的边界固化用于悬臂的液体合成树脂，其中粘合剂基底与用于悬臂的固化合成树脂的粘合性比非粘合剂基部具有更强的粘附性。