摘要:
A conductive layer is deposited into a trench in a sacrificial layer on a substrate. An etch stop layer is deposited over the conductive layer. The sacrificial layer is removed to form a gap. In one embodiment, a beam is over a substrate. An interconnect is on the beam. An etch stop layer is over the beam. A gap is between the beam and the etch stop layer.
摘要:
The present invention disclosed a micro acoustic collector with a lateral cavity, comprising: a base metal layer; a movable film, an annular side wall; a lateral metal layer. The movable film faces towards the base metal layer to form a hollow space. The lateral metal layer is formed at a side of the movable film and around the movable film, fixed by the annular side wall and spaced apart from peripheral of the movable film by a distance, and the lateral metal layer faces towards the base metal layer to form a lateral cavity to assist an acoustic collection.
摘要:
A microelectromechanical systems (MEMS) package with high gettering efficiency is provided. A MEMS device is arranged over a logic chip, within a cavity that is hermetically sealed. A sensing electrode is arranged within the cavity, between the MEMS device and the logic chip. The sensing electrode is electrically coupled to the logic chip and is a conductive getter material configured to remove gas molecules from the cavity. A method for manufacturing the MEMS package is also provided.
摘要:
Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
摘要:
Embodiments relate to MEMS devices and methods for manufacturing MEMS devices. In one embodiment, the manufacturing includes forming a monocrystalline sacrificial layer on a non-silicon-on-insulator (non-SOI) substrate, patterning the monocrystalline sacrificial layer such that the monocrystalline sacrificial layer remains in a first portion and is removed in a second portion lateral to the first portion; depositing a first silicon layer, the first silicon layer deposited on the remaining monocrystalline sacrificial layer and further lateral to the first portion; removing at least a portion of the monocrystalline sacrificial layer via at least one release aperture in the first silicon layer to form a cavity and sealing the cavity.
摘要:
A method for forming a MEMS device is provided. The method includes the following steps of providing a substrate having a first portion and a second portion; fabricating a membrane type sensor on the first portion of the substrate; and fabricating a bulk silicon sensor on the second portion of the substrate.
摘要:
A method of fabricating an integrated structure for MEMS device and semiconductor device comprises steps of: providing a substrate having a transistor thereon in a semiconductor device region and a first MEMS component thereon in a MEMS region; performing a interconnect process on the substrate in the semiconductor device region to form a plurality of first dielectric layers, at least a conductive plug and at least a conductive layer in the first dielectric layers; forming a plurality of second dielectric layers and an etch stopping device in the second dielectric layers on the substrate in a etch stopping device region; forming a plurality of third dielectric layers and at least a second MEMS component in the third dielectric layers on the substrate in the MEMS region; and performing an etching process to remove the third dielectric layers in the MEMS region.
摘要:
A MEMS package structure, including a substrate, an interconnecting structure, an upper metallic layer, a deposition element and a packaging element is provided. The interconnecting structure is disposed on the substrate. The MEMS structure is disposed on the substrate and within a first cavity. The upper metallic layer is disposed above the MEMS structure and the interconnecting structure, so as to form a second cavity located between the upper metallic layer and the interconnecting structure and communicates with the first cavity. The upper metallic layer has at least a first opening located above the interconnecting structure and at least a second opening located above the MEMS structure. Area of the first opening is greater than that of the second opening. The deposition element is disposed above the upper metallic layer to seal the second opening. The packaging element is disposed above the upper metallic layer to seal the first opening.
摘要:
A semiconductor fabrication is described, wherein a MOS device and a MEMS device is fabricated simultaneously in the BEOL process. A silicon layer is deposited and etched to form a silicon film for a MOS device and a lower silicon sacrificial film for a MEMS device. A conductive layer is deposited atop the silicon layer and etched to form a metal gate and a first upper electrode. A dielectric layer is deposited atop the conductive layer and vias are formed in the dielectric layer. Another conductive layer is deposited atop the dielectric layer and etched to form a second upper electrode and three metal electrodes for the MOS device. Another silicon layer is deposited atop the other conductive layer and etched to form an upper silicon sacrificial film for the MEMS device. The upper and lower silicon sacrificial films are then removed via venting holes.
摘要:
A CMOS compatible MEMS microphone is disclosed. In one embodiment, the microphone comprises an SOI substrate, wherein a CMOS circuitry is accommodated on its silicon device layer; a microphone diaphragm formed with a part of the silicon device layer, wherein the microphone diaphragm is doped to become conductive; a microphone backplate including CMOS passivation layers with a metal layer sandwiched and a plurality of through holes, provided above the silicon device layer, wherein the plurality of through holes are formed in the portion thereof opposite to the microphone diaphragm, and the metal layer forms an electrode plate of the backplate; a plurality of dimples protruding from the lower surface of the microphone backplate opposite to the diaphragm; and an air gap provided between the diaphragm and the microphone backplate.