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    OPTICAL WAVEGUIDE STRUCTURE WITH WAVEGUIDE COUPLER TO FACILITATE OFF-CHIP COUPLING
    9.
    发明申请
    OPTICAL WAVEGUIDE STRUCTURE WITH WAVEGUIDE COUPLER TO FACILITATE OFF-CHIP COUPLING 有权
    具有波形耦合器的光波导结构，以便于片外耦合

    公开(公告)号：US20150063768A1

    公开(公告)日：2015-03-05

    申请号：US14019518

    申请日：2013-09-05

    申请人： International Business Machines Corporation

    发明人： Russell A. Budd ,  Fuad E. Doany ,  Christopher V. Jahnes ,  Benjamin G. Lee ,  Laurent Schares

    IPC分类号： G02B6/12 ,  G02B6/136

    CPC分类号： G02B6/26 ,  G02B6/12 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/132 ,  G02B6/136 ,  G02B6/2821 ,  G02B6/305

    摘要： Aspects of the invention are directed to a method for forming an optical waveguide structure. Initially, a base film stack is received with an optical waveguide feature covered by a lower dielectric layer. An etch stop feature is then formed on the lower dielectric layer, and an upper dielectric layer is formed over the etch stop feature. Subsequently, a trench is patterned in the upper dielectric layer and the etch stop feature at least in part by utilizing the etch stop feature as an etch stop. Lastly, a waveguide coupler feature is formed in the trench, at least a portion of the waveguide coupler feature having a refractive index higher than the lower dielectric layer and the upper dielectric layer. The waveguide coupler feature is positioned over at least a portion of the optical waveguide feature but is separated from the optical waveguide feature by a portion of the lower dielectric layer.

    摘要翻译： 本发明的方面涉及一种用于形成光波导结构的方法。 首先，接收具有被下介电层覆盖的光波导特征的基膜叠层。 然后在下介电层上形成蚀刻停止特征，并且在蚀刻停止特征上形成上介电层。 随后，至少部分地通过利用蚀刻停止特征作为蚀刻停止，在上电介质层和蚀刻停止特征中图案化沟槽。 最后，波导耦合器特征形成在沟槽中，波导耦合器特征的至少一部分的折射率高于下介电层和上电介质层。 波导耦合器特征位于光波导特征的至少一部分上，但是通过下介电层的一部分与光波导特征分离。