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公开(公告)号：US20240158225A1
公开(公告)日：2024-05-16
申请号：US18075882
申请日：2022-12-06
发明人： Jung-Hao CHANG , Weng-Yi CHEN
CPC分类号： B81C1/00476 , B81B7/02 , B81B2201/0257 , B81B2203/0315 , B81B2203/033 , B81B2203/0353 , B81B2207/01 , B81C2201/0108 , B81C2201/0132 , B81C2201/0133 , B81C2201/014 , B81C2201/0176
摘要： A micro electro mechanical system (MEMS) device and a method for manufacturing the same are provided. The MEMS device includes a substrate, a polymer film on the substrate and having a lower surface facing toward the substrate, a cavity passing through the substrate, and coil structures on the substrate and in the polymer film. The polymer film includes a corrugation pattern on the lower surface of the polymer film. A portion of the polymer film is exposed in the cavity.
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2.发明申请公开(公告)号：US20180244514A1
公开(公告)日：2018-08-30
申请号：US15957058
申请日：2018-04-19
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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3.发明授权公开(公告)号：US10062517B2
公开(公告)日：2018-08-28
申请号：US15374719
申请日：2016-12-09
申请人： wiSpry, Inc.
CPC分类号： H01G5/16 , B81B3/0008 , B81B3/0016 , B81B3/0051 , B81B2201/0221 , B81C1/00166 , B81C1/00476 , B81C2201/0109 , B81C2201/013 , H01G5/18 , H01G7/00
摘要： Systems, devices, and methods for micro-electro-mechanical system (MEMS) tunable capacitors can include a fixed actuation electrode attached to a substrate, a fixed capacitive electrode attached to the substrate, and a movable component positioned above the substrate and movable with respect to the fixed actuation electrode and the fixed capacitive electrode. The movable component can include a movable actuation electrode positioned above the fixed actuation electrode and a movable capacitive electrode positioned above the fixed capacitive electrode. At least a portion of the movable capacitive electrode can be spaced apart from the fixed capacitive electrode by a first gap, and the movable actuation electrode can be spaced apart from the fixed actuation electrode by a second gap that is larger than the first gap.
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公开(公告)号：US10011477B2
公开(公告)日：2018-07-03
申请号：US15437727
申请日：2017-02-21
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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公开(公告)号：US20180109203A1
公开(公告)日：2018-04-19
申请号：US15846727
申请日：2017-12-19
IPC分类号： H02N1/00 , H01L29/84 , H01L21/311 , H01L21/50 , H01L21/768 , H01L21/02 , B81C1/00
CPC分类号： H02N1/00 , B81C1/00476 , H01L21/02 , H01L21/02126 , H01L21/31116 , H01L21/50 , H01L21/7688 , H01L29/84
摘要： A method includes providing a substrate having a first sacrificial oxide region, the substrate comprising a first interconnect layer, the first interconnect layer comprising the first sacrificial oxide region. The method further includes covering the first sacrificial oxide region with a first porous layer being permeable to a vapor hydrofluoric acid (HF) etchant and selectively etching the first sacrificial oxide region through the first porous layer using the vapor HF etchant.
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6.发明授权公开(公告)号：US09909208B2
公开(公告)日：2018-03-06
申请号：US15233542
申请日：2016-08-10
IPC分类号： H01L21/31 , C23C14/35 , B81C1/00 , C03C17/245 , C23C14/08 , C23C14/10 , C23C14/58 , C03C17/00 , C03C3/06 , C03C15/00 , C23C14/24 , C23C16/44 , G02B1/115
CPC分类号： C23C14/35 , B81C1/00476 , C03C3/061 , C03C15/00 , C03C17/006 , C03C17/245 , C03C2201/32 , C03C2201/40 , C03C2217/425 , C03C2217/732 , C03C2217/91 , C03C2218/33 , C23C14/081 , C23C14/086 , C23C14/10 , C23C14/24 , C23C14/352 , C23C14/5826 , C23C14/5873 , C23C16/44 , G02B1/115
摘要： A method for developing a coating having a high light transmission and/or a low light reflection is provided. The method relates to a process for developing a coating with a high light transmission and/or a low light reflection, where the coating is deposited on a substrate. The coating is deposited as a mixed coating comprising a material A and a material B, where the coating is developed to have a coating thickness profile in which the lowest proportion of the material B is on the substrate surface and the highest proportion of coating material is on the coating surface. The material B is at least partially removed from the coating after deposition of the coating on the substrate.
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公开(公告)号：US09890259B2
公开(公告)日：2018-02-13
申请号：US15143626
申请日：2016-05-01
IPC分类号： B32B3/00 , C08J5/18 , C09K19/34 , B81C1/00 , C09K13/00 , B82Y40/00 , C09K19/02 , C09K19/38 , C09K19/52
CPC分类号： C08J5/18 , B81C1/00015 , B81C1/0015 , B81C1/00158 , B81C1/00476 , B81C1/00531 , B81C1/00539 , B81C2201/017 , B82Y40/00 , C08J2301/02 , C09K13/00 , C09K19/02 , C09K19/3402 , C09K19/3819 , C09K2019/523 , Y10T428/24851
摘要： Illustrative embodiments of microdevices and methods of manufacturing such microdevices are disclosed. In at least one illustrative embodiment, one or more microdevices may be formed on a substrate, with each of the one or more microdevices comprising a body micromachined from a continuous film formed on the substrate, the continuous film having a controlled microstructure of cellulose nanocrystals (CNC).
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公开(公告)号：US20180006208A1
公开(公告)日：2018-01-04
申请号：US15199894
申请日：2016-06-30
申请人： Intel Corporation
发明人： Feras EID , Sasha N. OSTER , Georgios C. DOGIAMIS , Shawna M. LIFF , Adel A. ELSHERBINI , Thomas L. SOUNART , Johanna M. SWAN
IPC分类号： H01L41/113 , G06F1/16 , H01L41/16
CPC分类号： H01L41/1136 , B81B2201/0235 , B81B2207/012 , B81C1/00476 , G06F1/1633 , G06F1/1694 , G06F2200/1637 , H01L41/1132 , H01L41/16
摘要： Embodiments of the invention include a sensing device that includes a base structure having a proof mass that is positioned in proximity to a cavity of an organic substrate, a piezoelectric material in contact with a first electrode of the base structure, and a second electrode in contact with the piezoelectric material. The proof mass deflects in response to application of an external force or acceleration and this deflection causes a stress in the piezoelectric material which generates a voltage differential between the first and second electrodes.
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公开(公告)号：US09859818B2
公开(公告)日：2018-01-02
申请号：US14562859
申请日：2014-12-08
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H02N1/00 , H01L21/311 , H01L21/02 , B81C1/00 , H01L21/50 , H01L29/84 , H01L21/768
CPC分类号： H02N1/00 , B81C1/00476 , H01L21/02 , H01L21/02126 , H01L21/31116 , H01L21/50 , H01L21/7688 , H01L29/84
摘要： A micro-device includes a substrate with a cavity. The cavity is covered with a porous layer that is permeable to vapor hydrofluoric acid (HF) etchant. The micro-device comprises a Microelectromechanical Systems (MEMS) device with a component that is moveable in operational use of the MEMS device. The component is arranged within the cavity.
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公开(公告)号：US09815690B2
公开(公告)日：2017-11-14
申请号：US15212888
申请日：2016-07-18
CPC分类号： B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
摘要： A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.
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