公开(公告)号：US20190233277A1

公开(公告)日：2019-08-01

申请号：US16379982

申请日：2019-04-10

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC分类号： B81B3/00 ,  H01L41/113 ,  B81C1/00 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC分类号： B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20180093884A1

公开(公告)日：2018-04-05

申请号：US15809066

申请日：2017-11-10

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Stephen E. LUCE ,  Anthony K. STAMPER

IPC分类号： B81C1/00 ,  H01H59/00 ,  H01H11/00 ,  H01H49/00 ,  H01H1/58

CPC分类号： B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

摘要： An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode, forming a second cantilevered electrode over an electrode and operable to contact the first cantilevered electrode upon an application of a voltage to the electrode, and forming an arm on the first cantilevered electrode with an extending protrusion extending upward from an upper surface of the arm.

公开(公告)号：US20180072566A1

公开(公告)日：2018-03-15

申请号：US15802789

申请日：2017-11-03

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC分类号： H01P1/10 ,  B81C1/00 ,  H01H59/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  B81B3/00 ,  H01H1/00

CPC分类号： B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20180016137A1

公开(公告)日：2018-01-18

申请号：US15717187

申请日：2017-09-27

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Stephen E. LUCE ,  Anthony K. STAMPER

IPC分类号： B81C1/00 ,  H01H49/00 ,  H01H59/00 ,  H01H11/00 ,  H01H1/58

CPC分类号： B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

摘要： An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode over a first fixed electrode, forming a second cantilevered electrode with an end that overlaps the first cantilevered electrode, forming a third cantilevered electrode operable to directly contact the first cantilevered electrode upon an application of a voltage to a second fixed electrode, and forming a hermetically sealed volume encapsulating the first fixed electrode, the second fixed electrode, the first cantilevered electrode, and the second cantilevered electrode.

公开(公告)号：US20170158490A1

公开(公告)日：2017-06-08

申请号：US15437727

申请日：2017-02-21

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC分类号： B81B3/00 ,  G06F17/50 ,  B81C1/00

CPC分类号： B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20160244321A1

公开(公告)日：2016-08-25

申请号：US15148130

申请日：2016-05-06

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC分类号： B81B3/00 ,  H01H59/00 ,  H01H1/00 ,  B81C1/00

CPC分类号： B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

摘要翻译： 形成微机电系统（MEMS）的方法包括在MEMS的空腔内的第一绝缘体层上形成下电极。 该方法还包括在下部电极的顶部上形成上部电极，该上部电极至少部分地与下部电极接触。 下电极和上电极的形成包括调节下电极和上电极的金属体积以改变光束弯曲。

公开(公告)号：US20160146672A1

公开(公告)日：2016-05-26

申请号：US14553203

申请日：2014-11-25

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Qizhi LIU ,  Anthony K. STAMPER ,  Ronald F. WALLER

IPC分类号： G01J5/20 ,  H01L37/00 ,  H01J37/317

CPC分类号： G01J5/20 ,  G01J5/024 ,  G01J2005/202 ,  G01J2005/206 ,  H01J37/3171 ,  H01J2237/31701 ,  H01L37/00

摘要： A microbolometer device integrated with CMOS and BiCMOS technologies and methods of manufacture are disclosed. The method includes forming a microbolometer unit cell, comprises damaging a portion of a substrate to form a damaged region. The method further includes forming infrared (IR) absorbing material on the damaged region. The method further includes isolating the IR absorbing material by forming a cavity underneath the IR absorbing material.

摘要翻译： 公开了与CMOS和BiCMOS技术以及制造方法集成的微测辐射计装置。 该方法包括形成微量热计单元电池，包括损坏基板的一部分以形成受损区域。 该方法还包括在损伤区域上形成红外（IR）吸收材料。 该方法还包括通过在IR吸收材料下形成空腔来隔离IR吸收材料。

公开(公告)号：US20160145097A1

公开(公告)日：2016-05-26

申请号：US15012314

申请日：2016-02-01

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Stephen E. LUCE ,  Anthony K. STAMPER

IPC分类号： B81C1/00

CPC分类号： B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

摘要： MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

公开(公告)号：US20160096721A1

公开(公告)日：2016-04-07

申请号：US14963844

申请日：2015-12-09

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC分类号： B81B3/00

CPC分类号： B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

摘要： A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20160093523A1

公开(公告)日：2016-03-31

申请号：US14963530

申请日：2015-12-09

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Mark D. JAFFE ,  Alvin J. JOSEPH ,  Qizhi LIU ,  Anthony K. STAMPER

IPC分类号： H01L21/764

CPC分类号： H01L21/76289 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/0273 ,  H01L21/26533 ,  H01L21/266 ,  H01L21/30604 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/76286 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/66651 ,  H01L29/66772 ,  H01L29/78

摘要： A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.

摘要翻译： 公开了具有下面的气隙的场效应晶体管（FET）和制造方法。 该方法包括在衬底的预定深度处形成非晶层。 该方法还包括在非晶层下方的衬底中形成气隙。 该方法还包括在非晶层和气隙之上的衬底的有源区中形成完全隔离的晶体管。