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公开(公告)号：US11975965B2
公开(公告)日：2024-05-07
申请号：US18340815
申请日：2023-06-23
申请人： SiTime Corporation
CPC分类号： B81C1/00698 , H03H3/0073 , H03H9/1057 , H10N30/05 , H10N39/00 , B81C1/00158 , B81C2201/0171
摘要： Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
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公开(公告)号：US11724934B2
公开(公告)日：2023-08-15
申请号：US18072506
申请日：2022-11-30
申请人： SiTime Corporation
CPC分类号： B81C1/00698 , H03H3/0073 , H03H9/1057 , H10N30/05 , H10N39/00 , B81C1/00158 , B81C2201/0171
摘要： Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
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3.发明公开公开(公告)号：US20230242393A1
公开(公告)日：2023-08-03
申请号：US18043374
申请日：2021-08-18
申请人： Robert Bosch GmbH
CPC分类号： B81B3/0086 , B81B3/001 , B81C1/00968 , B81C1/00698 , B81B2201/0228 , B81B2201/0257 , B81B2201/0264 , B81B2203/04 , B81C2201/0105 , B81B2201/0221
摘要： A micromechanical component for a sensor or microphone device. An electrode surface of a first electrode structure is aligned with a second electrode structure. A substructure of the first electrode structure is entirely made of at least one electrically conductive material. The electrode surface and an opposite surface of the first electrode structure are outer surfaces of the substructure. A stop structure protruding from the electrode surface towards the second electrode structure is formed on the first electrode structure. The first electrode structure includes an insulating region which extends from the electrode surface to the opposite surface of the first electrode structure. The stop structure is formed either as a projection of the at least one insulating region protruding from the electrode surface towards the second electrode structure or is bordered by the at least one insulating region.
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公开(公告)号：US20180138887A1
公开(公告)日：2018-05-17
申请号：US15808227
申请日：2017-11-09
发明人： Takeshi MISHIMA , Hiroshi SUZUKI
CPC分类号： H03H9/02448 , B81B7/0041 , B81B2201/0271 , B81B2203/04 , B81C1/00182 , B81C1/00698 , H03H9/02259 , H03H9/02433 , H03H9/1057 , H03H9/2405 , H03H9/2463 , H03H2009/02472
摘要： A vibration transducer includes a silicon substrate, a first oxide film formed on the silicon substrate, an activation layer formed on the first oxide film, a second oxide film formed on the activation layer, a polysilicon layer formed on the second oxide film, and a substrate contact part. A vibrator, a vibrator electrode electrically conducted with the vibrator, a fixed electrode close to the vibrator and a vacuum chamber configured to surround the vibrator are formed in the activation layer. The polysilicon layer forms a shell. The substrate contact part is configured to electrically conduct the polysilicon layer and the silicon substrate, and is formed to continuously surround the vacuum chamber in a region, in which the vibrator, the vibrator electrode and the fixed electrode of the activation layer are not formed, of the activation layer.
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公开(公告)号：US09824834B2
公开(公告)日：2017-11-21
申请号：US14883836
申请日：2015-10-15
CPC分类号： B81C1/00698 , B81C1/0015 , B81C1/00166 , B81C1/00523 , B81C2201/0132 , B81C2201/0133 , B81C2201/0145 , B81C2201/0154 , B81C2203/0145 , H01H1/0036 , H01H1/58 , H01H11/00 , H01H49/00 , H01H59/00 , H01H59/0009 , H01H2059/0018 , Y10T29/49105
摘要： An approach includes a method of fabricating a switch. The approach includes forming a first fixed electrode and a second fixed electrode, forming a first cantilevered electrode aligned vertically over the first fixed electrode and the second fixed electrode, and operable to directly contact the second fixed electrode upon an application of a voltage to the first fixed electrode, forming a second cantilevered electrode aligned vertically over the second fixed electrode, and which has an end that overlaps the first cantilevered electrode, and forming a hermetically sealed volume encapsulating the first fixed electrode, the second fixed electrode, the first cantilevered electrode, and the second cantilevered electrode.
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公开(公告)号：US09659717B2
公开(公告)日：2017-05-23
申请号：US14182839
申请日：2014-02-18
CPC分类号： H01H1/0036 , B81B7/0064 , B81B2201/014 , B81B2207/03 , B81B2207/07 , B81B2207/115 , B81C1/00698 , B81C2201/0171 , B81C2203/075 , H01H59/0009 , H01P1/127
摘要： A MEMS apparatus has a substrate, an input node, an output node, and a MEMS switch between the input node and the output node. The switch selectively connects the input node and the output node, which are electrically isolated when the switch is open. The apparatus also has an input doped region in the substrate and an output doped region in the substrate. The input doped region and output doped region are electrically isolated through the substrate—i.e., the resistance between them inhibits non-negligible current flows between the two doped regions. The input doped region forms an input capacitance with the input node, while the output doped region forms an output capacitance with the output node.
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公开(公告)号：US09656854B2
公开(公告)日：2017-05-23
申请号：US14394473
申请日：2012-11-29
发明人： Shin Hur , Young Do Jung , Young Hwa Lee , Jun Hyuk Kwak , Chang-Hyeon Ji
IPC分类号： B81B3/00 , H04R19/04 , H04R19/00 , B81C1/00 , C25D3/04 , C25D3/12 , C25D3/38 , C25D3/44 , C25D3/46 , C25D3/54 , C25D3/56 , C25D5/02 , C25D5/34 , C25D7/12 , C25D1/08
CPC分类号： B81B3/0086 , B81B2201/0257 , B81C1/00698 , C25D1/08 , C25D3/04 , C25D3/12 , C25D3/38 , C25D3/44 , C25D3/46 , C25D3/54 , C25D3/56 , C25D5/02 , C25D5/34 , C25D7/12 , H04R19/005 , H04R19/04
摘要： Disclosed herein are a microelectromechanical systems (MEMS) microphone with a dual-back plate, and a method of manufacturing the same. The MEMS microphone according to an exemplary embodiment of the present invention includes: a substrate having a first back plate formed at a central portion thereof; a membrane plate disposed on first support parts formed at both sides on the substrate and vibrated depending on external sound pressure; and a second back plate disposed on second support parts formed at both sides of the membrane plate.
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公开(公告)号：US20170081182A1
公开(公告)日：2017-03-23
申请号：US14861358
申请日：2015-09-22
发明人： Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu
CPC分类号： B81B3/0086 , B81B7/0058 , B81B2203/0307 , B81B2203/033 , B81C1/00039 , B81C1/00698 , B81C2201/017 , B81C2203/0764 , B82Y10/00 , C08K5/34 , G06N3/0635 , H01L21/00 , H01L21/02263 , H01L21/30625 , H01L21/465 , H01L27/092 , H01L29/42316 , H01L49/00
摘要： An electromechanical device comprises a substrate structure, a set of electrodes, one or more anchor trenches, and one or more multi-faced components. For example, each of the one or more multi-faced components comprises an isolation region formed on a first portion of the surface of the component, a high resistance region formed on a second portion of the surface of the component, and a low resistance region formed on a third portion of the surface of the component. For example, the synapse device is configured to provide an analog resistive output, ranging between the high resistance region and the low resistance region, from at least one of the set of electrodes in response to a pulsed voltage input to at least another one of the set of electrodes.
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9.发明授权Mechanical resonator with a spring-mass system comprising a phase-change material 有权具有包括相变材料的弹簧质量系统的机械谐振器公开(公告)号：US09584092B2
公开(公告)日：2017-02-28
申请号：US14686509
申请日：2015-04-14
CPC分类号： H03H9/02393 , B81B3/0045 , B81B3/007 , B81B7/008 , B81B2203/0163 , B81C1/00698 , B81C2201/017 , H02N11/00 , H03H9/02244 , H03H2009/02165 , H03H2009/02299 , H03H2009/02322
摘要： A mechanical resonator includes a spring-mass system, wherein the spring-mass system comprises a phase-change material. The mechanical resonator typically comprises an electrical circuit portion, coupled to the phase-change material to alter a phase configuration within the phase-change material. Methods of operation are also disclosed.
摘要翻译： 机械谐振器包括弹簧质量系统，其中弹簧质量系统包括相变材料。 机械谐振器通常包括耦合到相变材料的电路部分，以改变相变材料内的相位配置。 还公开了操作方法。
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10.发明申请FULLY DEPLETED REGION FOR REDUCED PARASITIC CAPACITANCE BETWEEN A POLY-SILICON LAYER AND A SUBSTRATE REGION 有权完全覆盖的区域，用于降低聚硅层和基片区域之间的平行电容公开(公告)号：US20160145093A1
公开(公告)日：2016-05-26
申请号：US14942824
申请日：2015-11-16
申请人： Cirrus Logic, Inc.
发明人： Shanjen Pan , Marc L. Tarabbia
CPC分类号： B81B3/0086 , B81B2201/0257 , B81C1/00698 , H04R19/005 , H04R19/04 , H04R2307/025
摘要： A fully depleted region may be used to reduce poly-to-substrate parasitic capacitance in an electronic device with poly-silicon layer. When the fully depleted region is located at least partially beneath the electronic device, an additional parasitic capacitance is formed between the fully depleted region and the substrate region. This additional parasitic capacitance is coupled in series with a first parasitic capacitance between a poly-silicon layer of the electronic device and the doped region. The series combination of the first parasitic capacitance and the additional parasitic capacitance results in an overall reduction of parasitic capacitance experience by an electronic device. The structure may include two doped regions on sides of the electronic device to form a fully depleted region based on lateral interaction of dopant in the doped regions and the substrate region.
摘要翻译： 可以使用完全耗尽区域来减少具有多晶硅层的电子器件中的多对衬底寄生电容。 当完全耗尽区域至少部分地位于电子器件下方时，在完全耗尽区域和衬底区域之间形成附加的寄生电容。 该额外的寄生电容与电子器件的多晶硅层与掺杂区域之间的第一寄生电容串联耦合。 第一寄生电容和附加寄生电容的串联组合导致电子器件的寄生电容体验的总体减小。 该结构可以在电子器件的侧面上包括两个掺杂区域，以基于掺杂区域和衬底区域中掺杂剂的横向相互作用形成完全耗尽区域。
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