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公开(公告)号：US11584642B1
公开(公告)日：2023-02-21
申请号：US16861778
申请日：2020-04-29
申请人： SiTime Corporation
摘要： Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
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公开(公告)号：US20230416081A1
公开(公告)日：2023-12-28
申请号：US18340815
申请日：2023-06-23
申请人： SiTime Corporation
CPC分类号： B81C1/00698 , H10N30/05 , H10N39/00 , H03H3/0073 , H03H9/1057 , B81C2201/0171 , B81C1/00158
摘要： Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
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公开(公告)号：US10676349B1
公开(公告)日：2020-06-09
申请号：US15676890
申请日：2017-08-14
申请人： SiTime Corporation
摘要： Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
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公开(公告)号：US10737934B1
公开(公告)日：2020-08-11
申请号：US15911045
申请日：2018-03-02
申请人： SiTime Corporation
发明人： Nicholas Miller , Ginel C. Hill , Charles I. Grosjean , Michael Julian Daneman , Paul M. Hagelin , Aaron Partridge
摘要： A semiconductor device includes first and second exposed electrical contacts and a cavity having a microelectromechanical system (MEMS) structure therein. A conductive path extends from the first exposed electrical contact to the cavity and an over-voltage protection element electrically is coupled between the first and second exposed electrical contacts.
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公开(公告)号：US09705470B1
公开(公告)日：2017-07-11
申请号：US14617753
申请日：2015-02-09
申请人： SiTime Corporation
IPC分类号： H01L41/16 , H01L41/18 , H01L41/047 , H03H9/02 , H01L41/314 , H01L41/29 , H01L41/253 , H03H9/15
CPC分类号： H03H9/02448 , H03H9/02362 , H03H9/2452 , H03H2003/027 , H03H2009/02307 , H03H2009/155
摘要： Degenerately doped semiconductor materials are deployed within resonant structures to control the first and higher order temperature coefficients of frequency, thereby enabling temperature dependence to be engineered without need for cumulative material layers which tend to drive up cost and compromise resonator performance.
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公开(公告)号：US20170093361A1
公开(公告)日：2017-03-30
申请号：US15186510
申请日：2016-06-19
申请人： SiTime Corporation
发明人： Charles I. Grosjean , Nicholas Miller , Paul M. Hagelin , Ginel C. Hill , Joseph C. Doll , Trushal Chokshi , Yi Zhang , Aaron Partridge , Markus Lutz
CPC分类号： H03H3/0077 , H03H9/02259 , H03H9/02401 , H03H9/02448 , H03H9/1057 , H03H9/17 , H03H9/2463 , H03H2003/027 , H03H2009/02307 , H03H2009/155
摘要： In a MEMS device having a substrate and a moveable micromachined member, a mechanical structure secures the moveable micromachined member to the substrate, thermally isolates the moveable micromachined member from the substrate and provides a conduction path to enable heating of the moveable micromachined member to a temperature of at least 300 degrees Celsius.
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公开(公告)号：US11975965B2
公开(公告)日：2024-05-07
申请号：US18340815
申请日：2023-06-23
申请人： SiTime Corporation
CPC分类号： B81C1/00698 , H03H3/0073 , H03H9/1057 , H10N30/05 , H10N39/00 , B81C1/00158 , B81C2201/0171
摘要： Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
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公开(公告)号：US11724934B2
公开(公告)日：2023-08-15
申请号：US18072506
申请日：2022-11-30
申请人： SiTime Corporation
CPC分类号： B81C1/00698 , H03H3/0073 , H03H9/1057 , H10N30/05 , H10N39/00 , B81C1/00158 , B81C2201/0171
摘要： Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
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公开(公告)号：US20230183060A1
公开(公告)日：2023-06-15
申请号：US18072506
申请日：2022-11-30
申请人： SiTime Corporation
CPC分类号： B81C1/00698 , H03H3/0073 , H03H9/1057 , H10N30/05 , H10N39/00 , B81C1/00158 , B81C2201/0171
摘要： Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
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公开(公告)号：US11312622B1
公开(公告)日：2022-04-26
申请号：US16915696
申请日：2020-06-29
申请人： SiTime Corporation
发明人： Nicholas Miller , Ginel C. Hill , Charles I. Grosjean , Michael Julian Daneman , Paul M. Hagelin , Aaron Partridge
摘要： A semiconductor device includes first and second exposed electrical contacts and a cavity having a microelectromechanical system (MEMS) structure therein. A conductive path extends from the first exposed electrical contact to the cavity and an over-voltage protection element electrically is coupled between the first and second exposed electrical contacts.
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