公开(公告)号：US20240327201A1

公开(公告)日：2024-10-03

申请号：US18192576

申请日：2023-03-29

Applicant: Intel Corporation

Inventor： Numair Ahmed ,  Mohammad Mamunur Rahman ,  Suddhasattwa Nad ,  Sashi Kandanur ,  Darko Grujicic ,  Benjamin Duong ,  Srinivas Pietambaram ,  Tarek Ibrahim ,  Whitney Bryks

IPC: B81B7/00 ,  B81C1/00 ,  G02B6/12

CPC classification number: B81B7/0048 ,  B81C1/00325 ,  G02B6/12004 ,  B81B2201/0228 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B81B2201/03 ,  B81B2201/045 ,  B81B2207/07 ,  B81B2207/096 ,  B81B2207/097

Abstract: MEMS dies embedded in glass cores of integrated circuit (IC) package substrates are disclosed. An example integrated circuit (IC) package includes a package substrate including a glass core, the example integrated circuit (IC) package also includes a micro electromechanical system (MEMS) die positioned in a cavity of the glass core.

公开(公告)号：US20240286890A1

公开(公告)日：2024-08-29

申请号：US18585802

申请日：2024-02-23

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Altti TORKKELI ,  Masakazu FUKUMITSU ,  Anssi BLOMQVIST ,  Matti LIUKKU ,  Ville-Pekka RYTKÖNEN ,  Tadayuki OKAWA ,  Petteri KILPINEN

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/0051 ,  B81C1/00666 ,  B81C1/00984 ,  B81B2201/0228

Abstract: A MEMS device is provided that includes a handle layer having a cavity and a suspension structure, a first device layer including a static electrode, a second device layer including a seismic element moveably suspended above the first device layer and a cap layer. The seismic element acts as the moveable electrode or the seismic element is mechanically coupled to move with the moveable electrode. The handle layer, the first device layer, the second device layer and the cap layer, a first electrically insulating layer between the handle layer and the first device layer, and a second electrically insulating layer between the first device layer and the second device layer form an enclosure that accommodates the seismic element, the static electrode and the moveable electrode.

公开(公告)号：US20230251621A1

公开(公告)日：2023-08-10

申请号：US18301002

申请日：2023-04-14

Applicant: STMicroelectronics S.r.l.

Inventor： Luca FONTANELLA ,  Andrea LABOMBARDA ,  Marco BIANCO ,  Davide GHEZZI ,  Christian RAINERI ,  Paolo GATTI

IPC: G05B19/406 ,  G05B23/02

CPC classification number: G05B19/406 ,  G05B23/0218 ,  B81B2201/02 ,  B81B2201/0228 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/01 ,  G05B2219/34351

Abstract: A system for detecting and evaluating environmental quantities and events is formed by a detection and evaluation device and a mobile phone, connected through a wireless connection. The device is enclosed in a containment casing housing a support carrying a plurality of inertial sensors and environmental sensors. A processing unit is coupled to the inertial sensors and to the environmental sensors. A wireless connection unit, is coupled to the processing unit and a wired connection port, is coupled to the processing unit. A programming connector is coupled to the processing unit and is configured to couple to an external programming unit to receive programming instructions of the processing unit. A storage structure is coupled to the processing unit and a power-supply unit supplied power in the detection and evaluation device. The mobile phone stores an application, which enables a basicuse mode, an expert use mode, and an advanced use mode.

公开(公告)号：US20180111823A1

公开(公告)日：2018-04-26

申请号：US15334619

申请日：2016-10-26

Applicant: Analog Devices, Inc.

Inventor： Thomas Kieran Nunan ,  Li Chen

IPC: B81B7/00 ,  H01L21/768 ,  B81C3/00 ,  H01L23/48

CPC classification number: B81B7/0006 ,  B81B2201/0228 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81B2207/096 ,  B81C1/00238 ,  B81C3/001 ,  B81C2203/036 ,  B81C2203/037 ,  B81C2203/0792 ,  H01L21/76898 ,  H01L23/481

Abstract: Integrated circuit substrates having through silicon vias (TSVs) are described. The TSVs are vias extending through the silicon substrate in which the integrated circuitry is formed. The TSVs may be formed prior to formation of the integrated circuitry on the integrated circuit substrate, allowing the use of via materials which can be fabricated at relatively small sizes. The integrated circuit substrates may be bonded with a substrate having a microelectromechanical systems (MEMS) device. In some such situations, the circuitry of the integrated circuit substrate may face away from the MEMS substrate since the TSVs may provide electrical connection from the circuitry side of the integrated circuit substrate to the MEMS device.

公开(公告)号：US09890038B2

公开(公告)日：2018-02-13

申请号：US15049339

申请日：2016-02-22

Applicant: Versana Micro Inc

Inventor： Bishnu Prasanna Gogoi

IPC: B81B7/02 ,  H01L27/14 ,  H01L27/22 ,  H01L27/16 ,  H05K7/02 ,  H01L41/113

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

公开(公告)号：US09725298B2

公开(公告)日：2017-08-08

申请号：US14988842

申请日：2016-01-06

Applicant: Robert Bosch GmbH

Inventor： Ando Feyh ,  Po-Jui Chen ,  Markus Ulm

IPC: H01L29/84 ,  H01L21/50 ,  B81C1/00 ,  B81B3/00 ,  B81B7/00 ,  H01L29/772 ,  H01L21/02 ,  H01L21/58

CPC classification number: B81B3/0021 ,  B81B2201/0221 ,  B81B2201/0228 ,  B81C1/00134 ,  B81C1/00246 ,  B81C2203/0771

Abstract: A method of fabricating a semiconductor device comprises forming a dielectric layer above a substrate, the dielectric layer including a fixed dielectric portion and a proof mass portion, forming a source region and a drain region in the substrate, forming a gate electrode in the proof mass portion, and releasing the proof mass portion, such that the proof mass portion is movable with respect to the fixed dielectric portion and the gate electrode is movable with the proof mass portion relative to the source region and the drain region.

公开(公告)号：US20170073216A1

公开(公告)日：2017-03-16

申请号：US15361972

申请日：2016-11-28

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Tsuyoshi Okami ,  Takashi Mizota ,  Yuki Ueya ,  Junya Matsuoka ,  Nobuaki Tsuji

IPC: B81B3/00 ,  G01C19/5762

CPC classification number: B81B3/0021 ,  B81B3/00 ,  B81B3/0045 ,  B81B2201/0228 ,  B81B2201/0242 ,  B81B2203/0154 ,  G01C19/5762 ,  H01L41/113 ,  H01L41/1132 ,  H01L41/125

Abstract: A MEMS structure includes a planar substrate, a support body coupled to the planar substrate, a fixed electrode coupled to the planar substrate and a moveable portion. The movable portion is spaced from and faces the fixed electrode. The movable electrode includes a movable weight and an intermediate frame surrounding an outer edge of the movable weight. A plurality of elastic supports connect the movable weight to the intermediate frame. The elastic supports are elastically deformable in a first direction extending parallel to the plane of the substrate such that the movable weight can move in the first direction. At least one torsion bar pivotally connects one end of the intermediate frame to the support body so as to allow the intermediate frame, and with it the movable weight, to pivot around an axis which extends parallel to the plane of the substrate and perpendicular to the first direction.

Abstract translation: MEMS结构包括平面基板，耦合到平面基板的支撑体，耦合到平面基板的固定电极和可移动​​部分。 可动部与固定电极间隔开并面对固定电极。 可移动电极包括可移动重物和围绕可移动重物的外边缘的中间框架。 多个弹性支撑件将可移动重物连接到中间框架。 弹性支撑件可在平行于基板的平面延伸的第一方向上弹性变形，使得可移动的重物能够沿第一方向移动。 至少一个扭力杆将中间框架的一端枢转地连接到支撑体，以便允许中间框架，并且与其一起移动的重物围绕平行于基板平面延伸的轴线并垂直于 第一个方向

公开(公告)号：US20170066645A1

公开(公告)日：2017-03-09

申请号：US14844132

申请日：2015-09-03

Applicant: General Electric Company

Inventor： Joleyn Eileen Brewer ,  Christopher Fred Keimel ,  Marco Francesco Aimi ,  Andrew Minnick ,  Renner Stephen Ruffalo

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0027 ,  B81B3/0075 ,  B81B7/0003 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2201/0228 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/053 ,  B81B2207/015 ,  B81B2207/115 ,  B81C1/00134 ,  B81C1/0015 ,  B81C1/00158 ,  B81C1/00182 ,  B81C1/00373 ,  B81C2201/0107 ,  G01L9/0042 ,  G01L9/0044

Abstract: A system and method for a micro-electrical-mechanical system (MEMS) device including a substrate and a free-standing and suspended electroplated metal MEMS structure formed on the substrate. The free-standing and suspended electroplated metal MEMS structure includes a metal mechanical element mechanically coupled to the substrate and a seed layer mechanically coupled to and in electrical communication with the mechanical element, the seed layer comprising at least one of a refractory metal and a refractory metal alloy, wherein a thickness of the mechanical element is substantially greater than a thickness of the seed layer such that the mechanical and electrical properties of the free-standing and suspended electroplated metal MEMS structure are defined by the material properties of the mechanical element.

Abstract translation: 一种用于微电子机械系统（MEMS）装置的系统和方法，其包括形成在基板上的基板和独立悬挂的电镀金属MEMS结构。 独立悬挂的电镀金属MEMS结构包括机械耦合到基底的金属机械元件和机械耦合到机械元件并与之机电连接的种子层，种子层包括难熔金属和耐火材料中的至少一种 金属合金，其中机械元件的厚度基本上大于种子层的厚度，使得独立和悬浮的电镀金属MEMS结构的机械和电学性质由机械元件的材料特性限定。

公开(公告)号：US09550668B1

公开(公告)日：2017-01-24

申请号：US14834498

申请日：2015-08-25

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Jia Jie Xia ,  Nagarajan Ranganathan ,  Rakesh Kumar ,  Aveek Nath Chatterjee

IPC: H01L29/84 ,  B81B7/02 ,  B81C1/00

CPC classification number: B81B7/02 ,  B81B7/007 ,  B81B2201/0228 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/095 ,  B81B2207/096 ,  B81C1/00269 ,  B81C2203/0109 ,  H01L29/84

Abstract: Integrated MEMS devices for pressure sensing and inertial sensing, methods for fabricating such integrated devices, and methods for fabricating vertically integrated MEMS pressure sensor/inertial sensor devices are provided. In an example, a method for fabricating an integrated device for pressure and inertial sensing includes forming a MEMS pressure sensor on a first side of a semiconductor substrate. The method further includes forming a MEMS inertial sensor on a second side of the semiconductor substrate. The second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.

Abstract translation: 提供用于压力感测和惯性感测的集成MEMS器件，用于制造这种集成器件的方法，以及用于制造垂直集成的MEMS压力传感器/惯性传感器器件的方法。 在一个示例中，用于制造用于压力和惯性感测的集成装置的方法包括在半导体衬底的第一侧上形成MEMS压力传感器。 该方法还包括在半导体衬底的第二侧上形成MEMS惯性传感器。 半导体衬底的第二面与半导体衬底的第一侧相对。

公开(公告)号：US20160167954A1

公开(公告)日：2016-06-16

申请号：US15050388

申请日：2016-02-22

Applicant: Versana Micro Inc

Inventor： BISHNU PRASANNA GOGOI

IPC: B81B7/02

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.