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公开(公告)号：US09659717B2
公开(公告)日：2017-05-23
申请号：US14182839
申请日：2014-02-18
Applicant: Analog Devices Global
Inventor： Check F. Lee , Raymond C. Goggin , Padraig L. Fitzgerald
CPC classification number: H01H1/0036 , B81B7/0064 , B81B2201/014 , B81B2207/03 , B81B2207/07 , B81B2207/115 , B81C1/00698 , B81C2201/0171 , B81C2203/075 , H01H59/0009 , H01P1/127
Abstract: A MEMS apparatus has a substrate, an input node, an output node, and a MEMS switch between the input node and the output node. The switch selectively connects the input node and the output node, which are electrically isolated when the switch is open. The apparatus also has an input doped region in the substrate and an output doped region in the substrate. The input doped region and output doped region are electrically isolated through the substrate—i.e., the resistance between them inhibits non-negligible current flows between the two doped regions. The input doped region forms an input capacitance with the input node, while the output doped region forms an output capacitance with the output node.
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公开(公告)号：US10429456B2
公开(公告)日：2019-10-01
申请号：US16189854
申请日：2018-11-13
Applicant: Analog Devices Global
Inventor： Alan J. O'Donnell , Robert Guyol , Maria Jose Martinez , Jan Kubik , Padraig L. Fitzgerald , Javier Calpe Maravilla , Michael P. Lynch , Eoin E. English
Abstract: A magnetic device may include a magnetic structure, a device structure, and an associated circuit. The magnetic structure may include a patterned layer of material having a predetermined magnetic property. The patterned layer may be configured to, e.g., provide a magnetic field, sense a magnetic field, channel or concentrate magnetic flux, shield a component from a magnetic field, or provide magnetically actuated motion, etc. The device structure may be another structure of the device that is physically connected to or arranged relative to the magnetic structure to, e.g., structurally support, enable operation of, or otherwise incorporate the magnetic structure into the magnetic device, etc. The associated circuit may be electrically connected to the magnetic structure to receive, provide, condition or process of signals of the magnetic device.
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公开(公告)号：US20190178953A1
公开(公告)日：2019-06-13
申请号：US16189854
申请日：2018-11-13
Applicant: Analog Devices Global
Inventor： Alan J. O'Donnell , Robert Guyol , Maria Jose Martinez , Jan Kubik , Padraig L. Fitzgerald , Javier Calpe Maravilla , Michael P. Lynch , Eoin E. English
CPC classification number: G01R33/09 , B81B3/00 , B81B3/0091 , H01F17/0006 , H01F17/0033 , H01F2017/0066 , H01L43/08
Abstract: A magnetic device may include a magnetic structure, a device structure, and an associated circuit. The magnetic structure may include a patterned layer of material having a predetermined magnetic property. The patterned layer may be configured to, e.g., provide a magnetic field, sense a magnetic field, channel or concentrate magnetic flux, shield a component from a magnetic field, or provide magnetically actuated motion, etc. The device structure may be another structure of the device that is physically connected to or arranged relative to the magnetic structure to, e.g., structurally support, enable operation of, or otherwise incorporate the magnetic structure into the magnetic device, etc. The associated circuit may be electrically connected to the magnetic structure to receive, provide, condition or process of signals of the magnetic device.
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公开(公告)号：US20170178781A1
公开(公告)日：2017-06-22
申请号：US14973314
申请日：2015-12-17
Applicant: Analog Devices Global
Inventor： Alan J. O'DONNELL , Robert GUYOL , Maria Jose MARTINEZ , Jan KUBIK , Padraig L. Fitzgerald , Javier CALPE MARAVILLA , Michael P. LYNCH , Eoin E. ENGLISH
IPC: H01F17/00
CPC classification number: H01F17/0006 , B81B3/00 , B81B3/0091 , G01R33/09 , H01F17/0033 , H01F2017/0066 , H01L43/08
Abstract: A magnetic device may include a magnetic structure, a device structure, and an associated circuit. The magnetic structure may include a patterned layer of material having a predetermined magnetic property. The patterned layer may be configured to, e.g., provide a magnetic field, sense a magnetic field, channel or concentrate magnetic flux, shield a component from a magnetic field, or provide magnetically actuated motion, etc. The device structure may be another structure of the device that is physically connected to or arranged relative to the magnetic structure to, e.g., structurally support, enable operation of, or otherwise incorporate the magnetic structure into the magnetic device, etc. The associated circuit may be electrically connected to the magnetic structure to receive, provide, condition or process of signals of the magnetic device.
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公开(公告)号：US20150311021A1
公开(公告)日：2015-10-29
申请号：US14278362
申请日：2014-05-15
Applicant: Analog Devices Global
Inventor： Check F. Lee , Raymond C. Goggin , Padraig L. Fitzgerald , Bernard P. Stenson , Mark Schirmer , Jo-ey Wong
CPC classification number: H01H59/0009 , B81B7/007 , B81C1/00341 , H01H1/0036 , H01H2001/0084
Abstract: A MEMS switch has a base formed from a substrate with a top surface and an insulator layer formed on at least a portion of the top surface. Bonding material secures a cap to the base to form an interior chamber. The cap effectively forms an exterior region of the base that is exterior to the interior chamber. The MEMS switch also has a movable member (in the interior chamber) having a member contact portion, an internal contact (also in the interior chamber), and an exterior contact at the exterior region of the base. The contact portion of the movable member is configured to alternatively contact the interior contact. A conductor at least partially within the insulator layer electrically connects the interior contact and the exterior contact. The conductor is spaced from and electrically isolated from the bonding material securing the cap to the base.
Abstract translation: MEMS开关具有由具有顶表面的基底和形成在顶表面的至少一部分上的绝缘体形成的基底。 接合材料将盖固定到基部以形成内部室。 盖子有效地形成在内部室外部的基部的外部区域。 MEMS开关还具有可移动构件（在内部室中），其具有构件接触部分，内部接触件（也在内部腔室中）以及在基部的外部区域处的外部接触件。 可动构件的接触部分构造成交替地接触内部触点。 至少部分地在绝缘体层内的导体电连接内部触点和外部触点。 导体与将盖固定到基座的接合材料间隔开并与之电隔离。
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Patent Agency Ranking
公开(公告)号：US10033179B2
公开(公告)日：2018-07-24
申请号：US14743396
申请日：2015-06-18
Applicant: Analog Devices Global Unlimited Company
Inventor： Padraig L. Fitzgerald , Eric James Carty
Abstract: A method of and apparatus for protecting a MEMS switch is provided. The method and apparatus improve the integrity of MEMS switches by reducing their vulnerability to current flow through them during switching of the MEMS switch between on and off or vice versa. The protection circuit provides for a parallel path, known as a shunt, around the MEMS component. However, components within the shunt circuit can themselves be removed from the shunt when they are not required. This improves the electrical performance of the shunt when the switch is supposed to be in an off state.
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公开(公告)号：US09748048B2
公开(公告)日：2017-08-29
申请号：US14262188
申请日：2014-04-25
Applicant: Analog Devices Global
Inventor： Padraig L. Fitzgerald , Jo-ey Wong , Raymond C. Goggin , Bernard P. Stenson , Paul Lambkin , Mark Schirmer
CPC classification number: H01H1/0036 , H01H59/0009 , H01H2001/0084 , H01H2059/0018 , H01H2059/0072
Abstract: Several features are disclosed that improve the operating performance of MEMS switches such that they exhibit improved in-service life and better control over switching on and off.
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公开(公告)号：US20150235779A1
公开(公告)日：2015-08-20
申请号：US14182839
申请日：2014-02-18
Applicant: Analog Devices Global
Inventor： Check F. Lee , Raymond C. Goggin , Padraig L. Fitzgerald
CPC classification number: H01H1/0036 , B81B7/0064 , B81B2201/014 , B81B2207/03 , B81B2207/07 , B81B2207/115 , B81C1/00698 , B81C2201/0171 , B81C2203/075 , H01H59/0009 , H01P1/127
Abstract: A MEMS apparatus has a substrate, an input node, an output node, and a MEMS switch between the input node and the output node. The switch selectively connects the input node and the output node, which are electrically isolated when the switch is open. The apparatus also has an input doped region in the substrate and an output doped region in the substrate. The input doped region and output doped region are electrically isolated through the substrate—i.e., the resistance between them inhibits non-negligible current flows between the two doped regions. The input doped region forms an input capacitance with the input node, while the output doped region forms an output capacitance with the output node.
Abstract translation: MEMS装置在输入节点和输出节点之间具有衬底，输入节点，输出节点和MEMS开关。 开关选择性地连接输入节点和输出节点，当开关打开时，输出节点和输出节点电隔离。 该装置还具有衬底中的输入掺杂区域和衬底中的输出掺杂区域。 输入掺杂区域和输出掺杂区域通过衬底电隔离，即它们之间的电阻在两个掺杂区域之间抑制不可忽略的电流。 输入掺杂区域与输入节点形成输入电容，而输出掺杂区域与输出节点形成输出电容。
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公开(公告)号：US20210405130A1
公开(公告)日：2021-12-30
申请号：US17344687
申请日：2021-06-10
Applicant: Analog Devices Global
Inventor： Alan J. O'Donnell , Robert Guyol , Maria Jose Martinez , Jan Kubik , Padraig L. Fitzgerald , Javier Calpe Maravilla , Michael P. Lynch , Eoin E. English
Abstract: A magnetic device may include a magnetic structure, a device structure, and an associated circuit. The magnetic structure may include a patterned layer of material having a predetermined magnetic property. The patterned layer may be configured to, e.g., provide a magnetic field, sense a magnetic field, channel or concentrate magnetic flux, shield a component from a magnetic field, or provide magnetically actuated motion, etc. The device structure may be another structure of the device that is physically connected to or arranged relative to the magnetic structure to, e.g., structurally support, enable operation of, or otherwise incorporate the magnetic structure into the magnetic device, etc. The associated circuit may be electrically connected to the magnetic structure to receive, provide, condition or process of signals of the magnetic device.
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公开(公告)号：US10461151B2
公开(公告)日：2019-10-29
申请号：US15288502
申请日：2016-10-07
Applicant: ANALOG DEVICES GLOBAL
Inventor： Patrick F. M. Poucher , Padraig L. Fitzgerald , John Jude O'Donnell , Oliver J. Kierse , Denis M. O'Connor
Abstract: An integrated circuit may include a semiconductor die having a trench formed in a surface of the semiconductor die. One or more circuit components may be formed on the surface of the semiconductor die. The trench can extend into the semiconductor die next to at least one circuit component. The trench may surround the circuit component partially or wholly. The trench may be filled with a material having a lower bulk modulus than the semiconductor die in which the trench is formed.
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