公开(公告)号：US10730743B2

公开(公告)日：2020-08-04

申请号：US16159477

申请日：2018-10-12

Applicant: Analog Devices Global Unlimited Company

Inventor： Oliver J. Kierse ,  Rigan McGeehan ,  Alfonso Berduque ,  Donal Peter McAuliffe ,  Raymond J. Speer ,  Brendan Cawley ,  Brian J. Coffey ,  Gerald Blaney

IPC: H01L23/02 ,  B81B7/00 ,  G01N33/00 ,  H01L23/00 ,  H01L23/31 ,  G01N27/404 ,  H01L25/065 ,  B81C1/00 ,  H01L23/055 ,  H01L23/24 ,  H01L23/49 ,  H01L23/498 ,  H01L23/50

Abstract: A gas sensor package is disclosed. The gas sensor package can include a housing defining a first chamber and a second chamber. An electrolyte can be provided in the first chamber. A gas inlet can provide fluid communication between the second chamber and the outside environs. The gas inlet can be configured to permit gas to enter the second chamber from the outside environs. An integrated device die can be mounted to the housing. The integrated device die can comprise a sensing element configured to detect the gas. The integrated device die can have a first side exposed to the first chamber and a second side exposed to the second chamber, with the first side opposite the second side.

公开(公告)号：US20190135614A1

公开(公告)日：2019-05-09

申请号：US16159477

申请日：2018-10-12

Applicant: Analog Devices Global Unlimited Company

Inventor： Oliver J. Kierse ,  Rigan McGeehan ,  Alfonso Berduque ,  Donal Peter McAuliffe ,  Raymond J. Speer ,  Brendan Cawley ,  Brian J. Coffey ,  Gerald Blaney

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/055 ,  H01L23/498 ,  H01L23/24 ,  H01L23/49 ,  H01L23/50 ,  H01L23/00 ,  G01N33/00

Abstract: A gas sensor package is disclosed. The gas sensor package can include a housing defining a first chamber and a second chamber. An electrolyte can be provided in the first chamber. A gas inlet can provide fluid communication between the second chamber and the outside environs. The gas inlet can be configured to permit gas to enter the second chamber from the outside environs. An integrated device die can be mounted to the housing. The integrated device die can comprise a sensing element configured to detect the gas. The integrated device die can have a first side exposed to the first chamber and a second side exposed to the second chamber, with the first side opposite the second side.

公开(公告)号：US10461151B2

公开(公告)日：2019-10-29

申请号：US15288502

申请日：2016-10-07

Applicant: ANALOG DEVICES GLOBAL

Inventor： Patrick F. M. Poucher ,  Padraig L. Fitzgerald ,  John Jude O'Donnell ,  Oliver J. Kierse ,  Denis M. O'Connor

IPC: H01L23/12 ,  H01L29/06 ,  H01L21/764 ,  H01L23/00 ,  H01L23/16 ,  H01L23/31

Abstract: An integrated circuit may include a semiconductor die having a trench formed in a surface of the semiconductor die. One or more circuit components may be formed on the surface of the semiconductor die. The trench can extend into the semiconductor die next to at least one circuit component. The trench may surround the circuit component partially or wholly. The trench may be filled with a material having a lower bulk modulus than the semiconductor die in which the trench is formed.

公开(公告)号：US20170025497A1

公开(公告)日：2017-01-26

申请号：US15288502

申请日：2016-10-07

Applicant: ANALOG DEVICES GLOBAL

Inventor： Patrick F.M. Poucher ,  Padraig L. Fitzgerald ,  John Jude O'Donnell ,  Oliver J. Kierse ,  Denis M. O'Connor

IPC: H01L29/06 ,  H01L23/31 ,  H01L23/00 ,  H01L23/16

CPC classification number: H01L29/0649 ,  H01L21/764 ,  H01L23/16 ,  H01L23/3135 ,  H01L23/3178 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit may include a semiconductor die having a trench formed in a surface of the semiconductor die. One or more circuit components may be formed on the surface of the semiconductor die. The trench can extend into the semiconductor die next to at least one circuit component. The trench may surround the circuit component partially or wholly. The trench may be filled with a material having a lower bulk modulus than the semiconductor die in which the trench is formed.

Abstract translation: 集成电路可以包括具有形成在半导体管芯的表面中的沟槽的半导体管芯。 可以在半导体管芯的表面上形成一个或多个电路部件。 沟槽可以在至少一个电路部件旁边延伸到半导体管芯中。 沟槽可以部分或全部地围绕电路部件。 沟槽可以填充具有比其中形成沟槽的半导体管芯更低的体积模量的材料。

公开(公告)号：US09466666B2

公开(公告)日：2016-10-11

申请号：US13740677

申请日：2013-01-14

Applicant: ANALOG DEVICES GLOBAL

Inventor： Patrick F. M. Poucher ,  Padraig L. Fitzgerald ,  John Jude O'Donnell ,  Oliver J. Kierse ,  Denis M. O'Connor

IPC: H01L23/12 ,  H01L29/06 ,  H01L21/764 ,  H01L23/00 ,  H01L23/16 ,  H01L23/31

CPC classification number: H01L29/0649 ,  H01L21/764 ,  H01L23/16 ,  H01L23/3135 ,  H01L23/3178 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit may include a semiconductor die having a trench formed in a surface of the semiconductor die. One or more circuit components may be formed on the surface of the semiconductor die. The trench can extend into the semiconductor die next to at least one circuit component. The trench may surround the circuit component partially or wholly. The trench may be filled with a material having a lower bulk modulus than the semiconductor die in which the trench is formed.

Abstract translation: 集成电路可以包括具有形成在半导体管芯的表面中的沟槽的半导体管芯。 可以在半导体管芯的表面上形成一个或多个电路部件。 沟槽可以延伸到半导体管芯中，靠近至少一个电路部件。 沟槽可以部分或全部地围绕电路部件。 沟槽可以填充具有比其中形成沟槽的半导体管芯更低的体积模量的材料。