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公开(公告)号：US11961796B2
公开(公告)日：2024-04-16
申请号：US17461828
申请日：2021-08-30
发明人： Yueh-Ting Lin , Hua-Wei Tseng , Ming Shih Yeh , Der-Chyang Yeh
IPC分类号： H01L23/498 , H01L23/00 , H01L23/31 , H01L23/538 , H01L25/11
CPC分类号： H01L23/49838 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/49833 , H01L23/5389 , H01L24/16 , H01L24/73 , H01L25/117 , H01L2224/16146 , H01L2224/73204 , H01L2225/1076
摘要： A package comprises at least one first device die, and a redistribution line (RDL) structure having the at least one first device die bonded thereto. The RDL structure comprises a plurality of dielectric layers, and a plurality of RDLs formed through the plurality of dielectric layers. A trench is defined proximate to axial edges of the RDL structure through each of the plurality of dielectric layers. The trench prevents damage to portions of the RDL structure located axially inwards of the trench.
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公开(公告)号：US20230154881A1
公开(公告)日：2023-05-18
申请号：US18155705
申请日：2023-01-17
发明人： Hua-Wei Tseng , Yueh-Ting Lin , Shao-Yun Chen , Li-Hsien Huang , An-Jhih Su , Ming-Shih Yeh , Der-Chyang Yeh
IPC分类号： H01L23/00
CPC分类号： H01L24/24 , H01L24/19 , H01L24/82 , H01L28/00 , H01L25/0657
摘要： A package structure including IPD and method of forming the same are provided. The package structure includes a die, an encapsulant laterally encapsulating the die, a first RDL structure disposed on the encapsulant and the die, an IPD disposed on the first RDL structure and an underfill layer. The IPD includes a substrate, a first connector on a first side of the substrate and electrically connected to the first RDL structure, a guard structure on a second side of the substrate opposite to the first side and laterally surrounding a connector region, and a second connector disposed within the connector region and electrically connected to a conductive via embedded in the substrate. The underfill layer is disposed to at least fill a space between the first side of the IPD and the first RDL structure. The underfill layer is separated from the connector region by the guard structure.
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公开(公告)号：US11444020B2
公开(公告)日：2022-09-13
申请号：US16846750
申请日：2020-04-13
发明人： Chen-Hua Yu , An-Jhih Su , Chi-Hsi Wu , Wen-Chih Chiou , Tsang-Jiuh Wu , Der-Chyang Yeh , Ming Shih Yeh
IPC分类号： H01L23/522 , H01L21/768 , H01L21/033 , H01L21/311 , H01L21/3105 , H01L21/683 , H01L21/02 , H01L23/00 , H01L23/528 , H01L33/62 , H01L21/56 , H01L25/075 , H01L33/38 , H01L25/07 , H01L23/538 , H01L33/00 , H01L33/06 , H01L33/32 , H01L21/321
摘要： A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.
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公开(公告)号：US11424189B2
公开(公告)日：2022-08-23
申请号：US16694501
申请日：2019-11-25
发明人： Chen-Hua Yu , Shin-Puu Jeng , Der-Chyang Yeh , Hsien-Wei Chen
IPC分类号： H01L23/31 , H01L23/538 , H01L23/00 , H01L25/10 , H01L23/498
摘要： A package includes a corner, a device die, a plurality of redistribution lines underlying the device die, and a plurality of non-solder electrical connectors underlying and electrically coupled to the plurality of redistribution lines. The plurality of non-solder electrical connectors includes a corner electrical connector. The corner electrical connector is elongated. An electrical connector is farther away from the corner than the corner electrical connector, wherein the electrical connector is non-elongated.
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公开(公告)号：US20220223534A1
公开(公告)日：2022-07-14
申请号：US17148568
申请日：2021-01-14
发明人： Yu-Hung Lin , Chih-Wei Wu , Chia-Nan Yuan , Ying-Ching Shih , An-Jhih Su , Szu-Wei Lu , Ming-Shih Yeh , Der-Chyang Yeh
IPC分类号： H01L23/538 , H01L23/48 , H01L23/00 , H01L23/31 , H01L23/29 , H01L21/768 , H01L21/56
摘要： A package structure and method of forming the same are provided. The package structure includes a first die and a second die disposed side by side, a first encapsulant laterally encapsulating the first and second dies, a bridge die disposed over and connected to the first and second dies, a second encapsulant and a first RDL structure. The bridge die includes a semiconductor substrate, a conductive via and an encapsulant layer. The semiconductor substrate has a through substrate via embedded therein. The conductive via is disposed over a back side of the semiconductor substrate and electrically connected to the through substrate via. The encapsulant layer is disposed over the back side of the semiconductor substrate and laterally encapsulates the conductive via. The second encapsulant is disposed over the first encapsulant and laterally encapsulates the bridge die. The first RDL structure is disposed on the bridge die and the second encapsulant.
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公开(公告)号：US11335658B2
公开(公告)日：2022-05-17
申请号：US16221693
申请日：2018-12-17
发明人： Jing-Cheng Lin , Chen-Hua Yu , Jui-Pin Hung , Der-Chyang Yeh
IPC分类号： H01L29/24 , H01L23/00 , H01L23/498 , H01L23/538 , H01L23/31 , H01L21/56
摘要： A method comprises applying a metal-paste printing process to a surface-mount device to form a metal pillar, placing a first semiconductor die adjacent to the surface-mount device, forming a molding compound layer over the first semiconductor die and the surface-mount device, grinding the molding compound layer until a top surface of the first semiconductor die is exposed and forming a plurality of interconnect structures over the molding compound layer.
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公开(公告)号：US11056464B2
公开(公告)日：2021-07-06
申请号：US15914102
申请日：2018-03-07
发明人： Chen-Hua Yu , Shin-Puu Jeng , Der-Chyang Yeh , Hsien-Wei Chen , Jie Chen
IPC分类号： H01L21/768 , H01L25/065 , H01L23/538 , H01L23/00 , H01L25/10 , H01L23/50 , H01L23/48 , H01L23/31
摘要： A package includes a corner, a device die, a plurality of redistribution lines underlying the device die, and a plurality of metal pads electrically coupled to the plurality of redistribution lines. The plurality of metal pads includes a corner metal pad closest to the corner, wherein the corner metal pad is a center-facing pad having a bird-beak direction substantially pointing to a center of the package. The plurality of metal pads further includes a metal pad farther away from the corner than the corner metal pad, wherein the metal pad is a non-center-facing pad having a bird-beak direction pointing away from the center of the package.
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公开(公告)号：US11037861B2
公开(公告)日：2021-06-15
申请号：US16683672
申请日：2019-11-14
发明人： Jui-Pin Hung , Jing-Cheng Lin , Po-Hao Tsai , Yi-Jou Lin , Shuo-Mao Chen , Chiung-Han Yeh , Der-Chyang Yeh
IPC分类号： H01L23/12 , H01L21/00 , H01L23/48 , H01L23/00 , H01L23/528 , H01L25/065 , H01L23/538 , H01L23/28 , H01L23/498 , H01L21/56 , H01L25/10 , H01L21/768 , H01L21/82 , H01L25/18 , H01L25/00 , H01L21/48 , H01L23/31
摘要： An interconnect structure and a method of forming an interconnect structure are provided. The interconnect structure is formed over a carrier substrate, upon which a die may also be attached. Upon removal of the carrier substrate and singulation, a first package is formed. A second package may be attached to the first package, wherein the second package may be electrically coupled to through vias formed in the first package.
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公开(公告)号：US11018069B2
公开(公告)日：2021-05-25
申请号：US16570572
申请日：2019-09-13
发明人： Ying-Ju Chen , An-Jhih Su , Hsien-Wei Chen , Der-Chyang Yeh , Chi-Hsi Wu , Chen-Hua Yu
IPC分类号： H01L23/31 , H01L21/48 , H01L23/538 , H01L23/00 , H01L21/56 , H01L23/522 , H01L23/498
摘要： A semiconductor device and method of reducing the risk of underbump metallization poisoning from the application of underfill material is provided. In an embodiment a spacer is located between a first underbump metallization and a second underbump metallization. When an underfill material is dispensed between the first underbump metallization and the second underbump metallization, the spacer prevents the underfill material from creeping towards the second underbump metallization. In another embodiment a passivation layer is used to inhibit the flow of underfill material as the underfill material is being dispensed.
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公开(公告)号：US10992100B2
公开(公告)日：2021-04-27
申请号：US16207974
申请日：2018-12-03
发明人： Chen-Hua Yu , An-Jhih Su , Chia-Nan Yuan , Shih-Guo Shen , Der-Chyang Yeh , Yu-Hung Lin , Ming Shih Yeh
IPC分类号： H01S5/02 , H01S5/042 , H01S5/022 , H01S5/183 , H01S5/30 , H01S5/026 , H01S5/323 , H01S5/0234 , H01S5/0237 , H01S5/02234
摘要： In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.
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