- 专利标题： Via for semiconductor device connection and methods of forming the same
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申请号： US16846750申请日： 2020-04-13
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公开(公告)号： US11444020B2公开(公告)日： 2022-09-13
- 发明人: Chen-Hua Yu , An-Jhih Su , Chi-Hsi Wu , Wen-Chih Chiou , Tsang-Jiuh Wu , Der-Chyang Yeh , Ming Shih Yeh
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L21/768 ; H01L21/033 ; H01L21/311 ; H01L21/3105 ; H01L21/683 ; H01L21/02 ; H01L23/00 ; H01L23/528 ; H01L33/62 ; H01L21/56 ; H01L25/075 ; H01L33/38 ; H01L25/07 ; H01L23/538 ; H01L33/00 ; H01L33/06 ; H01L33/32 ; H01L21/321
摘要：
A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.
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