- 专利标题: Semiconductor package dielectric substrate including a trench
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申请号: US17461828申请日: 2021-08-30
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公开(公告)号: US11961796B2公开(公告)日: 2024-04-16
- 发明人: Yueh-Ting Lin , Hua-Wei Tseng , Ming Shih Yeh , Der-Chyang Yeh
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: FOLEY & LARDNER LLP
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L23/00 ; H01L23/31 ; H01L23/538 ; H01L25/11
摘要:
A package comprises at least one first device die, and a redistribution line (RDL) structure having the at least one first device die bonded thereto. The RDL structure comprises a plurality of dielectric layers, and a plurality of RDLs formed through the plurality of dielectric layers. A trench is defined proximate to axial edges of the RDL structure through each of the plurality of dielectric layers. The trench prevents damage to portions of the RDL structure located axially inwards of the trench.
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