Abstract:
An integrated circuit (IC) package includes a first leadframe having a top surface and a bottom surface. An IC die has an active side coupled to the first leadframe bottom surface and has a back side. A second leadframe has a top surface and a bottom surface. The back side of said IC chip is coupled to the top surface of the second leadframe.
Abstract:
A method of making an integrated circuit package. A leadframe having a die attach paddle surrounded by lead portions is formed. Middle channels underlying in said die attach paddle portion in a region thereof adapted to receive a first die are formed
Abstract:
An integrated circuit (“IC”) package including at least one IC die having a first side with at least two adjacent bump pads thereon and a second side opposite the first side; a first substrate having a first side with a plurality of electrical contact surfaces thereon; and a plurality of copper pillars, each having a first end attached to one of the adjacent bump pads and a second end attached to one of the electrical contact surfaces.
Abstract:
A packaged semiconductor device has a semiconductor substrate with circuitry formed thereon. A shield plate is mounted over a designated region of the substrate and separated from the semiconductor substrate by a separator, such that the shield plate is separated from the designated region of the substrate by a distance. Mold compound encapsulates the semiconductor substrate and the shield plate, but is prevented from touching the designated region of the substrate by the shield plate.
Abstract:
Multi-die integrated circuit packages and methods of manufacturing the same are disclosed. An example integrated circuit package includes a first leadframe, a first die on a first side of the first leadframe, and a second die on a second side of the first leadframe opposite the first side. The example integrated circuit package further includes external second leadframe separate from the first leadframe.
Abstract:
Multi-die integrated circuit packages and methods of manufacturing the same are disclosed. An example integrated circuit package includes a first leadframe, a first die on a first side of the first leadframe, and a second die on a second side of the first leadframe opposite the first side. The example integrated circuit package further includes external second leadframe separate from the first leadframe.
Abstract:
Disclosed examples include a method of making a semiconductor die package comprising arranging at least one preformed die attach pad and at least two preformed leads on a lead frame carrier in a predetermined configuration to form a lead frame, attaching a semiconductor die to the at least one preformed die attach pad, wire bonding the semiconductor die to the at least two preformed leads, forming a molding structure including at least part of the semiconductor die and the at least two preformed leads, and removing the molding structure from the lead frame carrier.
Abstract:
A method for packaging integrated circuit die such that each package includes die with integrated passive components mounted to either the back surface, the active surface or both the back and active surfaces of the die.
Abstract:
In examples, a chip scale package (CSP) comprises a semiconductor die; a conductive terminal coupled to the semiconductor die; and a non-conductive coat covering a backside of the semiconductor die and a sidewall of the semiconductor die. The non-conductive coat has a thickness of less than 45 microns.
Abstract:
A method for forming a multilevel leadframe for an integrated circuit is provided. A conductive sheet is etched from one side to form a thinner region within a frame region for leads lines and bond pads. The conductive sheet is etched to form a plurality of bond pads in a first level of the thinner region arranged in at least a first row and a second row. Each bond pad has a pad width and is separated from an adjacent bond pad by a bond pad clearance distance. The conductive sheet is etched from an opposite side to form a plurality of lead lines in a second level of the thinner region having a line width and is separated from an adjacent lead line by at least a lead line clearance distance. Each bond pad of the second plurality of bond pads is connected to one of the plurality of lead lines on the second level that is routed between adjacent bond pads in the first row, so that the lead lines are routed on a different level from the bond pads.