公开(公告)号：US20130074771A1

公开(公告)日：2013-03-28

申请号：US13682479

申请日：2012-11-20

Applicant: VICTOR L. PUSHPARAJ ,  Pravin K. Narwankar ,  Dieter Haas ,  Bipin Thakur ,  Mahesh Arcot ,  Vikas Gujar ,  Omkaram Nalamasu

Inventor： VICTOR L. PUSHPARAJ ,  Pravin K. Narwankar ,  Dieter Haas ,  Bipin Thakur ,  Mahesh Arcot ,  Vikas Gujar ,  Omkaram Nalamasu

IPC: C23C16/54

CPC classification number: C23C16/545 ,  B82Y10/00 ,  B82Y40/00 ,  H01L31/035227 ,  H01L31/075 ,  H01L31/1876 ,  H01L31/206 ,  H01L51/0048 ,  H01L51/4213 ,  Y02E10/548 ,  Y02E10/549 ,  Y02P70/521

Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.

Abstract translation: 提供了一种用于在基底上形成复合材料的方法和装置。 复合材料包括碳纳米管和/或纳米纤维，以及复合本征和掺杂硅结构。 在一个实施方案中，基材为细长片或材料网的形式，并且该装置包括在形成复合材料之前和之后的供应和卷取辊以支撑幅材。 纤维网被引导通过各种处理室以形成复合材料。 在另一个实施例中，大规模衬底包括离散衬底。 离散的衬底被支撑在输送系统上，或者由机器人来处理，该机器人将衬底通过处理室，以在衬底上形成复合材料。 复合材料可用于形成储能装置和/或光伏器件。

公开(公告)号：US08117987B2

公开(公告)日：2012-02-21

申请号：US12873299

申请日：2010-08-31

Applicant: Dieter Haas ,  Pravin K. Narwankar ,  Randhir P. S. Thakur

Inventor： Dieter Haas ,  Pravin K. Narwankar ,  Randhir P. S. Thakur

IPC: A61D3/00

CPC classification number: C23C16/24 ,  C23C16/54 ,  H01L21/02532 ,  H01L21/0262

Abstract: Methods and apparatus for hot wire chemical vapor deposition (HWCVD) are provided herein. In some embodiments, an inline HWCVD tool may include a linear conveyor for moving a substrate through the linear process tool; and a multiplicity of HWCVD sources, the multiplicity of HWCVD sources being positioned parallel to and spaced apart from the linear conveyor and configured to deposit material on the surface of the substrate as the substrate moves along the linear conveyor; wherein the substrate is coated by the multiplicity of HWCVD sources without breaking vacuum. In some embodiments, methods of coating substrates may include depositing a first material from an HWCVD source on a substrate moving through a first deposition chamber; moving the substrate from the first deposition chamber to a second deposition chamber; and depositing a second material from a second HWCVD source on the substrate moving through the second deposition chamber.

Abstract translation: 本文提供了热线化学气相沉积（HWCVD）的方法和装置。 在一些实施例中，在线HWCVD工具可以包括用于通过线性处理工具移动衬底的线性输送机; 和多个HWCVD源，多个HWCVD源被定位成与线性传送器平行并与其间隔开，并且被配置为当衬底沿着线性传送器移动时将材料沉积在衬底的表面上; 其中所述基底被多个HWCVD源涂覆而不破坏真空。 在一些实施例中，涂覆基底的方法可以包括在移动通过第一沉积室的基底上沉积来自HWCVD源的第一材料; 将衬底从第一沉积室移动到第二沉积室; 以及将第二材料从第二HWCVD源沉积在移动通过第二沉积室的衬底上。

公开(公告)号：US07871942B2

公开(公告)日：2011-01-18

申请号：US12057113

申请日：2008-03-27

Applicant: Shreyas S. Kher ,  Pravin K. Narwankar ,  Khaled Z. Ahmed ,  Yi Ma

Inventor： Shreyas S. Kher ,  Pravin K. Narwankar ,  Khaled Z. Ahmed ,  Yi Ma

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/31645 ,  C23C14/083 ,  C23C16/56 ,  H01L21/3141

Abstract: Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.

Abstract translation: 公开了使用含有超高纯度铪的有机金属化合物制造高K（介电常数）膜的方法。 还描述了包含用高纯度铪含有有机金属化合物制成的高K膜的装置。

公开(公告)号：US07658973B2

公开(公告)日：2010-02-09

申请号：US10772893

申请日：2004-02-04

Applicant: Pravin K. Narwankar ,  Gary E. Miner ,  Arnaud Lepert

Inventor： Pravin K. Narwankar ,  Gary E. Miner ,  Arnaud Lepert

IPC: B05D3/02 ,  C23C16/00 ,  B05D1/40 ,  B05D3/12 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/28185 ,  H01L21/3105 ,  H01L21/3144 ,  H01L29/518 ,  H01L29/66181

Abstract: A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.

Abstract translation: 一种形成包括氮的电介质膜的方法。 该方法包括使用氮化气体和快速热退火工艺将氮合并到电介质膜中，其中使用等于或小于约10Torr的超低压用于快速热退火工艺。

公开(公告)号：US06454860B2

公开(公告)日：2002-09-24

申请号：US09179921

申请日：1998-10-27

Applicant: Craig R. Metzner ,  Turgut Sahin ,  Gregory F. Redinbo ,  Pravin K. Narwankar ,  Patricia M. Liu

Inventor： Craig R. Metzner ,  Turgut Sahin ,  Gregory F. Redinbo ,  Pravin K. Narwankar ,  Patricia M. Liu

IPC: C23C1600

CPC classification number: C23C16/4557 ,  C23C16/407 ,  C23C16/44 ,  C23C16/4405 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4481 ,  C23C16/452 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/54

Abstract: An integrated deposition system is provided which is capable of vaporizing low vapor pressure liquid precursors and delivering this vapor into a processing region for use in the fabrication of advanced integrated circuits. The integrated deposition system is made up of a heated exhaust system, a remote plasma generator, a processing chamber and a liquid delivery system which together provide a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors, anneal those films while also providing commercially viable in-situ cleaning capability.

Abstract translation: 提供一种集成沉积系统，其能够蒸发低蒸气压液体前体并将该蒸气输送到用于制造先进集成电路的处理区域中。 集成沉积系统由加热的排气系统，远程等离子体发生器，处理室和液体输送系统组成，这些系统一起提供了一种商业可行且具有生产价值的系统，用于从低蒸汽压前体沉积大容量电介质材料，退火 同时还提供商业上可行的原位清洁能力。

公开(公告)号：US08642376B2

公开(公告)日：2014-02-04

申请号：US13470768

申请日：2012-05-14

Applicant: Sukti Chatterjee ,  Annamalai Lakshmanan ,  Joe Griffith Cruz ,  Pravin K. Narwankar

Inventor： Sukti Chatterjee ,  Annamalai Lakshmanan ,  Joe Griffith Cruz ,  Pravin K. Narwankar

IPC: H01L21/00 ,  H01L21/36 ,  H01L21/20 ,  H01L21/322

CPC classification number: H01L21/0237 ,  C23C16/02 ,  C23C16/24 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262

Abstract: Methods for depositing a material atop a substrate are provided herein. In some embodiments, a method of depositing a material atop a substrate may include exposing a substrate to a silicon containing gas and a reducing gas; increasing a flow rate of the silicon containing gas while decreasing a flow rate of the reducing gas to form a first layer; and depositing a second layer atop the first layer.

Abstract translation: 本文提供了在基板上沉积材料的方法。 在一些实施例中，在衬底上沉积材料的方法可以包括将衬底暴露于含硅气体和还原气体; 增加含硅气体的流量，同时降低还原气体的流速以形成第一层; 以及在所述第一层顶上沉积第二层。

公开(公告)号：US20110045349A1

公开(公告)日：2011-02-24

申请号：US12858531

申请日：2010-08-18

Applicant: Victor L. Pushparaj ,  Pravin K. Narwankar ,  Omkaram Nalamasu

Inventor： Victor L. Pushparaj ,  Pravin K. Narwankar ,  Omkaram Nalamasu

IPC: H01M10/058 ,  B05D5/12 ,  C23C16/00 ,  H01G9/07

CPC classification number: H01M4/661 ,  H01G9/0029 ,  H01G9/0032 ,  H01G9/155 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M10/0525 ,  H01M10/0565 ,  H01M10/0585 ,  Y02E60/13 ,  Y10T29/49115

Abstract: Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300° C. and about 600° C., and depositing a conformal layer of cathodic material over the conformal polymeric layer.

Abstract translation: 提供了形成储能装置的方法和装置。 在一个实施例中，提供了一种生产能量存储装置的方法。 该方法包括将阳极集电器定位到处理区域中，在阳极集电器的表面上沉积由有限距离分隔的一个或多个三维电极，使得阳极集电器的表面的一部分保持暴露， 使用iCVD技术使阳极集电器和一个或多个三维电极上的共形聚合物层包括使气态单体流入加工区域，将气态引发剂通过加热的细丝流入加工区域以形成反应性气体混合物 气态单体和气态引发剂，其中将加热的长丝加热至约300℃至约600℃之间的温度，以及在共形聚合物层上沉积保形层的阴极材料。

公开(公告)号：US07775508B2

公开(公告)日：2010-08-17

申请号：US11554954

申请日：2006-10-31

Applicant: Kenric T. Choi ,  Pravin K. Narwankar ,  Shreyas S. Kher ,  Son T. Nguyen ,  Paul Deaton ,  Khai Ngo ,  Paul Chhabra ,  Alan H. Ouye ,  Dien-Yeh (Daniel) Wu

Inventor： Kenric T. Choi ,  Pravin K. Narwankar ,  Shreyas S. Kher ,  Son T. Nguyen ,  Paul Deaton ,  Khai Ngo ,  Paul Chhabra ,  Alan H. Ouye ,  Dien-Yeh (Daniel) Wu

IPC: B01F3/04

CPC classification number: C23C16/4481

Abstract: A method and apparatus for providing a precursor to a process chamber is described. The apparatus comprises an ampoule capable of receiving either a liquid precursor source material or a solid precursor source material. The ampoule is capable of delivering either a liquid precursor material to a vaporizer coupled to the process chamber, or a vaporized or gaseous precursor material to the process chamber. The ampoule also includes a continuous level sensor to accurately monitor the level of precursor source material within the ampoule.

Abstract translation: 描述了一种用于向处理室提供前体的方法和装置。 该装置包括能够接收液体前体源材料或固体前体源材料的安瓿。 安瓿能够将液体前体材料输送到耦合到处理室的蒸发器，或将蒸发的或气态的前体材料输送到处理室。 安瓿还包括连续液位传感器，以准确地监测安瓿内的前体源材料的含量。

公开(公告)号：US06274058B1

公开(公告)日：2001-08-14

申请号：US09347236

申请日：1999-07-02

Applicant: Ravi Rajagopalan ,  Patricia M. Liu ,  Pravin K. Narwankar ,  Huyen Tran ,  Padmanabhan Krishnaraj ,  Alan Ablao ,  Tim Casper

Inventor： Ravi Rajagopalan ,  Patricia M. Liu ,  Pravin K. Narwankar ,  Huyen Tran ,  Padmanabhan Krishnaraj ,  Alan Ablao ,  Tim Casper

IPC: H05H100

CPC classification number: H01J37/32862 ,  C23C16/4405 ,  C23C16/511 ,  C23C16/52 ,  H01J9/38 ,  H01J37/32192 ,  H01J37/32357 ,  Y10S438/905

Abstract: A processing chamber cleaning method is described which utilizes microwave energy to remotely generate a reactive species to be used alone or in combination with an inert gas to remove deposits from a processing chamber. The reactive species can remove deposits from a first processing region at a first pressure and then remove deposits from a second processing region at a second pressure. Also described is a cleaning process utilizing remotely generated reactive species in a single processing region at two different pressures. Additionally, different ratios of reactive gas and inert gas may be utilized to improve the uniformity of the cleaning process, increase the cleaning rate, reduce recombination of reactive species and increase the residence time of reactive species provided to the processing chamber.

Abstract translation: 描述了一种处理室清​​洁方法，其利用微波能量远程产生要单独使用或与惰性气体组合使用的反应物质以从处理室去除沉积物。 反应性物质可以在第一压力下从第一处理区域去除沉积物，然后在第二压力下从第二处理区域去除沉积物。 还描述了在两个不同压力下在单个处理区域中利用远程产生的活性物质的清洁方法。 此外，可以使用不同比例的反应气体和惰性气体来改善清洁过程的均匀性，提高清洗速率，减少活性物质的复合并增加提供给处理室的反应物种的停留时间。

公开(公告)号：US20130192524A1

公开(公告)日：2013-08-01

申请号：US13755891

申请日：2013-01-31

Applicant: Banqiu Wu ,  Nag B. Patibandla ,  Toshiaki Fujita ,  Ralf Hofmann ,  Pravin K. Narwankar ,  Jeonghoon Oh ,  Srinivas Satya ,  Li-Qun Xia

Inventor： Banqiu Wu ,  Nag B. Patibandla ,  Toshiaki Fujita ,  Ralf Hofmann ,  Pravin K. Narwankar ,  Jeonghoon Oh ,  Srinivas Satya ,  Li-Qun Xia

IPC: H01L21/673

CPC classification number: H01L21/673 ,  C23C16/45546 ,  C23C16/4558 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/67346 ,  H01L21/677

Abstract: A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.

Abstract translation: 提供一种处理室，其具有堆叠在其中的多个可移动基板载体，用于连续处理多个基板。 可移动衬底载体能够从处理室的外部传送，例如从负载运送室转移到处理室中并且从处理室中输送，例如被转移到另一负载运送室中。 输送到处理室中的工艺气体在空间上分离成多个处理槽，和/或在时间上被控制。 处理室可以是多室衬底处理系统的一部分。