公开(公告)号：US10595365B2

公开(公告)日：2020-03-17

申请号：US13253627

申请日：2011-10-05

Applicant: Alan H. Ouye ,  Graeme Scott ,  Keven Kaisheng Yu ,  Michael N. Grimbergen

Inventor： Alan H. Ouye ,  Graeme Scott ,  Keven Kaisheng Yu ,  Michael N. Grimbergen

IPC: H01J37/32 ,  H05B3/42

Abstract: Embodiments of the invention generally provide a lid heater for a plasma processing chamber. In one embodiment, a lid heater assembly is provided that includes a thermally conductive base. The thermally conductive base has a planar ring shape defining an inner opening. The lid heater assembly further includes a heating element disposed on the thermally conductive base, and an insulated center core disposed across the inner opening of the thermally conductive base.

公开(公告)号：US20120090784A1

公开(公告)日：2012-04-19

申请号：US13253627

申请日：2011-10-05

Applicant: Alan H. Ouye ,  Graeme Scott ,  Keven Kaisheng Yu ,  Michael N. Grimbergen

Inventor： Alan H. Ouye ,  Graeme Scott ,  Keven Kaisheng Yu ,  Michael N. Grimbergen

IPC: C23F1/08 ,  C23C16/505 ,  H05B3/02 ,  C23C16/458

CPC classification number: H05B3/42 ,  H01J37/32522 ,  H05B2203/003

Abstract: Embodiments of the invention generally provide a lid heater for a plasma processing chamber. In one embodiment, a lid heater assembly is provided that includes a thermally conductive base. The thermally conductive base has a planar ring shape defining an inner opening. The lid heater assembly further includes a heating element disposed on the thermally conductive base, and an insulated center core disposed across the inner opening of the thermally conductive base.

Abstract translation: 本发明的实施例通常提供一种用于等离子体处理室的盖式加热器。 在一个实施例中，提供了包括导热基座的盖加热器组件。 导热基座具有限定内部开口的平面环状。 盖加热器组件还包括设置在导热基座上的加热元件，以及横跨导热基底的内部开口设置的绝缘中心芯。

公开(公告)号：US20080099933A1

公开(公告)日：2008-05-01

申请号：US11554954

申请日：2006-10-31

Applicant: Kenric T. Choi ,  Pravin K. Narwankar ,  Shreyas S. Kher ,  Son T. Nguyen ,  Paul Deaton ,  Khai Ngo ,  Paul Chhabra ,  Alan H. Ouye ,  Dien-Yeh (Daniel) Wu

Inventor： Kenric T. Choi ,  Pravin K. Narwankar ,  Shreyas S. Kher ,  Son T. Nguyen ,  Paul Deaton ,  Khai Ngo ,  Paul Chhabra ,  Alan H. Ouye ,  Dien-Yeh (Daniel) Wu

IPC: F16K13/00 ,  B01F3/04

CPC classification number: C23C16/4481

Abstract: A method and apparatus for providing a precursor to a process chamber is described. The apparatus comprises an ampoule capable of receiving either a liquid precursor source material or a solid precursor source material. The ampoule is capable of delivering either a liquid precursor material to a vaporizer coupled to the process chamber, or a vaporized or gaseous precursor material to the process chamber. The ampoule also includes a continuous level sensor to accurately monitor the level of precursor source material within the ampoule.

Abstract translation: 描述了一种用于向处理室提供前体的方法和装置。 该装置包括能够接收液体前体源材料或固体前体源材料的安瓿。 安瓿能够将液体前体材料输送到耦合到处理室的蒸发器，或将蒸发的或气态的前体材料输送到处理室。 安瓿还包括连续液位传感器，以准确地监测安瓿内的前体源材料的含量。

公开(公告)号：US07775508B2

公开(公告)日：2010-08-17

申请号：US11554954

申请日：2006-10-31

Applicant: Kenric T. Choi ,  Pravin K. Narwankar ,  Shreyas S. Kher ,  Son T. Nguyen ,  Paul Deaton ,  Khai Ngo ,  Paul Chhabra ,  Alan H. Ouye ,  Dien-Yeh (Daniel) Wu

Inventor： Kenric T. Choi ,  Pravin K. Narwankar ,  Shreyas S. Kher ,  Son T. Nguyen ,  Paul Deaton ,  Khai Ngo ,  Paul Chhabra ,  Alan H. Ouye ,  Dien-Yeh (Daniel) Wu

IPC: B01F3/04

CPC classification number: C23C16/4481

Abstract: A method and apparatus for providing a precursor to a process chamber is described. The apparatus comprises an ampoule capable of receiving either a liquid precursor source material or a solid precursor source material. The ampoule is capable of delivering either a liquid precursor material to a vaporizer coupled to the process chamber, or a vaporized or gaseous precursor material to the process chamber. The ampoule also includes a continuous level sensor to accurately monitor the level of precursor source material within the ampoule.

Abstract translation: 描述了一种用于向处理室提供前体的方法和装置。 该装置包括能够接收液体前体源材料或固体前体源材料的安瓿。 安瓿能够将液体前体材料输送到耦合到处理室的蒸发器，或将蒸发的或气态的前体材料输送到处理室。 安瓿还包括连续液位传感器，以准确地监测安瓿内的前体源材料的含量。

公开(公告)号：US06955211B2

公开(公告)日：2005-10-18

申请号：US10197683

申请日：2002-07-17

Applicant: Vincent W. Ku ,  Ling Chen ,  Dien-Yeh Wu ,  Alan H. Ouye ,  Irena Wysok

Inventor： Vincent W. Ku ,  Ling Chen ,  Dien-Yeh Wu ,  Alan H. Ouye ,  Irena Wysok

IPC: F28D7/10 ,  H01L21/00 ,  F25B29/00

CPC classification number: F28D7/106 ,  F28F2270/00 ,  H01L21/67282

Abstract: A method and apparatus for controlling the temperature of at least one gas flowing into a processing chamber is provided. In one embodiment, a gas temperature control apparatus for semiconductor processing includes a gas delivery line coupled between a processing chamber and a gas source. An enclosure substantially encloses the gas delivery line and is adapted to flow a heat transfer fluid away from the processing chamber.

Abstract translation: 提供一种用于控制流入处理室的至少一种气体的温度的方法和装置。 在一个实施例中，用于半导体处理的气体温度控制装置包括耦合在处理室和气体源之间的气体输送管线。 壳体基本上包围气体输送管线，并且适于使传热流体远离处理室流动。