公开(公告)号：US06835279B2

公开(公告)日：2004-12-28

申请号：US09123352

申请日：1998-07-28

申请人： Yunlong Li ,  Noriyoshi Sato ,  Satoru Iizuka

发明人： Yunlong Li ,  Noriyoshi Sato ,  Satoru Iizuka

IPC分类号： H05H100

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H05H1/46

摘要： The object of the present invention is to make possible generation of high-density plasma even in the center of a plasma generation region. A plasma generation apparatus comprises a vacuum vessel 11, gas induction unit 12, exhaust unit 13, cylindrical discharge electrode 14, high-frequency oscillators 19 and 21, ring-shaped permanent magnets 15 and 16, and two disk-shaped walls 17 and 18. The discharge electrode 14 is fashioned so as to enclose a plasma generation region 41. The permanent magnets 15 and 16 form prescribed magnetic force lines. These magnetic force lines have portions that are roughly parallel to the center axis 42 of the discharge electrode 14, the lengths of which parallel portions become longer as the magnetic force lines approach the center axis 42. The two walls 17 and 18 define the scope of the plasma generation region 41 in the dimension of the center axis 42 of the discharge electrode 14. These two walls 17 and 18 are positioned so as to sandwich therebetween the plasma generation region 41 in the dimension of the center axis 42. The plasma generation apparatus is also configured so that the magnetic force lines 43 passing through the center of the plasma generation 41 are shaped so that they do not intersect the two walls 17 and 18.

摘要翻译： 本发明的目的是即使在等离子体产生区域的中心也可能产生高密度等离子体。 等离子体产生装置包括真空容器11，气体感应单元12，排气单元13，圆柱形放电电极14，高频振荡器19和21，环形永磁体15和16以及两个盘形壁17和18 放电电极14被形成为包围等离子体产生区域41.永久磁铁15和16形成规定的磁力线。 这些磁力线具有大致平行于放电电极14的中心轴线42的部分，随着磁力线接近中心轴线42，其平行部分变长的长度。两个壁17和18限定了 等离子体产生区域41，其尺寸为放电电极14的中心轴线42的尺寸。这两个壁17和18被定位成在等离子体产生区域41之间夹着中心轴线42的尺寸。等离子体产生装置 通过等离子体产生部41的中心的磁力线43也被配置成使得它们不与两个壁17和18相交。

公开(公告)号：US06811829B2

公开(公告)日：2004-11-02

申请号：US09811869

申请日：2001-03-19

申请人： John D. Affinito ,  Gordon L. Graff ,  Peter M. Martin ,  Mark E. Gross ,  Paul E. Burrows ,  Linda S. Sapochak

发明人： John D. Affinito ,  Gordon L. Graff ,  Peter M. Martin ,  Mark E. Gross ,  Paul E. Burrows ,  Linda S. Sapochak

IPC分类号： H05H100

CPC分类号： B05D1/62

摘要： A method for conformally coating a microtextured surface. The method includes flash evaporating a polymer precursor forming an evaporate, passing the evaporate to a glow discharge electrode creating a glow discharge polymer precursor plasma from the evaporate, cryocondensing the glow discharge polymer precursor plasma on the microtextured surface and crosslinking the glow discharge polymer precursor plasma thereon, wherein the crosslinking resulting from radicals created in the glow discharge polymer precursor plasma.

摘要翻译： 一种用于保形涂布微结构表面的方法。 该方法包括闪蒸蒸发形成蒸发物的聚合物前体，将蒸发物通过辉光放电电极，从蒸发器产生辉光放电聚合物前体等离子体，将辉光放电聚合物前体等离子体冷凝在微结构表面上并交联辉光放电聚合物前体等离子体 其上由在辉光放电聚合物前体等离子体中产生的自由基产生的交联。

公开(公告)号：US06797110B2

公开(公告)日：2004-09-28

申请号：US09811465

申请日：2001-03-20

申请人： Yuichi Takano ,  Koichi Terao

发明人： Yuichi Takano ,  Koichi Terao

IPC分类号： H05H100

CPC分类号： H01J37/32467 ,  C03C3/083 ,  C03C14/004 ,  H01J37/32238

摘要： A glass material for use in a microwave-transparent window of a plasma processing apparatus is provided. The glass material has not only good properties similar to those of quartz glass but a corrosion resistance particularly to fluorine-containing plasma. The glass having the corrosion resistance to the fluorine-containing plasma is composed of a first glass phase consisting of Si and O and a second glass phase consisting of Si, Al and O. The second glass phase has a mass ratio of Al to Si of at least 0.01. The glass member is useful as a component for forming an electromagnetic-wave introducing window of the plasma processing apparatus or the like.

摘要翻译： 提供了一种用于等离子体处理装置的微波透明窗的玻璃材料。 玻璃材料不仅具有与石英玻璃相似的良好性能，而且具有特别对含氟等离子体的耐腐蚀性。 具有对含氟等离子体的耐腐蚀性的玻璃由由Si和O组成的第一玻璃相和由Si，Al和O组成的第二玻璃相组成。第二玻璃相的Al与Si的质量比为 至少0.01。 玻璃构件可用作形成等离子体处理装置等的电磁波引入窗口的部件。

公开(公告)号：US06797109B2

公开(公告)日：2004-09-28

申请号：US10235976

申请日：2002-09-06

申请人： Jeong-hyuck Park ,  Hee-duk Kim ,  Jung-hun Cho ,  Jong-wook Choi ,  Sung-bum Cho ,  Young-koo Lee ,  Jin-sung Kim ,  Jang-eun Lee ,  Ju-hyuck Chung ,  Sun-hoo Park ,  Jae-hyun Lee ,  Shin-woo Nam

发明人： Jeong-hyuck Park ,  Hee-duk Kim ,  Jung-hun Cho ,  Jong-wook Choi ,  Sung-bum Cho ,  Young-koo Lee ,  Jin-sung Kim ,  Jang-eun Lee ,  Ju-hyuck Chung ,  Sun-hoo Park ,  Jae-hyun Lee ,  Shin-woo Nam

IPC分类号： H05H100

CPC分类号： H01J37/32431 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/54 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/32136 ,  H01L21/6831 ,  H01L21/68735 ,  Y10T117/10

摘要： A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

摘要翻译： 用于制造用于蚀刻半导体晶片上的材料层的半导体器件的处理室包括用于保持半导体晶片的静电卡盘和围绕静电卡盘上的半导体晶片侧的环形边缘环，以防止 半导体晶片从其原始位置脱离。 环形边缘环具有面向半导体晶片的侧面并​​与半导体晶片的侧面牢固接触的​​第一侧。

公开(公告)号：US06783628B2

公开(公告)日：2004-08-31

申请号：US10007127

申请日：2001-12-03

申请人： Naoko Yamamoto ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

发明人： Naoko Yamamoto ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： H05H100

CPC分类号： H01J37/32192 ,  H01J37/32211

摘要： A slot antenna plate is placed on a second dielectric for radiating microwave into a chamber interior, the slot antenna plate being provided on a side of the second dielectric that faces the chamber interior. The slot antenna plate is made of conductor and includes slots for passing the microwave there through to the chamber interior. In this way, a plasma processing apparatus is provided generating plasma by microwave, the plasma processing apparatus capable of easily adjusting ion irradiation energy for a material to be processed to achieve uniform plasma processing for the material within the plane of the material.

摘要翻译： 槽缝天线板放置在用于将微波辐射到室内部的第二电介质上，缝隙天线板设置在面向腔室内部的第二电介质的一侧上。 缝隙天线板由导体制成，并且包括用于使微波在那里通过腔室内部的槽。 以这种方式，通过微波提供产生等离子体的等离子体处理装置，等离子体处理装置能够容易地调整待处理材料的离子照射能量，以实现材料平面内材料的均匀等离子体处理。

公开(公告)号：US06733617B2

公开(公告)日：2004-05-11

申请号：US09903130

申请日：2001-07-11

申请人： Mu-Tsang Lin ,  Tse-Lun Chang ,  Sen-Tay Chang ,  Yao-Ping Yang

发明人： Mu-Tsang Lin ,  Tse-Lun Chang ,  Sen-Tay Chang ,  Yao-Ping Yang

IPC分类号： H05H100

CPC分类号： H01J37/32431

摘要： The direct detection of dielectric etch system magnet driver and coil malfunctions is disclosed. A dielectric etch system includes a plasma chamber in which a semiconductor wafer is placed to remove dielectric therefrom, and a number of coils positioned around the chamber to excite the plasma. Magnet drivers of a magnet driver circuitry provide configurable preset current from a power source to the coils. Malfunction detection circuitry includes a number of comparators connected in parallel. Each comparator couples between one of the magnet drivers and one of the coils. A relay couples the comparators to ground, and turns off the power source when any of the comparators yields a substantially non-zero current, which indicates that either the driver or the coil coupled to the comparator is malfunctioning.

摘要翻译： 公开了电介质蚀刻系统磁驱动器和线圈故障的直接检测。 电介质蚀刻系统包括等离子体室，其中放置半导体晶片以从其中除去电介质;以及多个线圈，位于室周围以激发等离子体。 磁铁驱动器电路的磁铁驱动器提供从电源到线圈的可配置的预设电流。 故障检测电路包括多个并联连接的比较器。 每个比较器耦合在一个磁体驱动器和一个线圈之间。 继电器将比较器耦合到地，并且当任何比较器产生基本非零电流时，关闭电源，这表示驱动器或耦合到比较器的线圈发生故障。

公开(公告)号：US06729850B2

公开(公告)日：2004-05-04

申请号：US10283358

申请日：2002-10-30

申请人： Raphael A. Dandl ,  Bill H. Quon ,  Samuel S Antley ,  Andrej S. Mitrovic ,  Wayne L. Johnson

发明人： Raphael A. Dandl ,  Bill H. Quon ,  Samuel S Antley ,  Andrej S. Mitrovic ,  Wayne L. Johnson

IPC分类号： H05H100

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H05H1/54

摘要： A plasma vacuum pump including an array of permanent magnets, one or more plasma conduits or ducts, components for accelerating plasma ions through these conduits, and supporting structures that together comprise at least one applied plasma duct system (APDS) cell. The APDS cell permits large volumes of particles and plasma to flow rapidly in a preferred direction while constricting the flow of neutral particles in the reverse direction. A plasma pump utilizing APDS technology is intended to permit a large throughput of ionized gas at the intermediate pressures of interest in the plasma-enhanced processing industry, compressing this gas to a pressure at which blower-type pumps can be used efficiently to exhaust the spent processing gas at atmospheric pressure.

摘要翻译： 包括永磁体阵列，一个或多个等离子体导管或管道的等离子体真空泵，用于通过这些导管加速等离子体离子的部件，以及一起包括至少一个施加的等离子体管道系统（APDS））的支撑结构。 APDS细胞允许大体积的颗粒和等离子体在优选的方向上快速流动，同时在相反方向上收缩中性粒子的流动。 使用APDS技术的等离子泵旨在允许在等离子体增强加工工业中感兴趣的中压下的大量电离气体压缩，将该气体压缩到可以有效地利用鼓风机型泵来排出废气的压力 在大气压下处理气体。

公开(公告)号：US06673198B1

公开(公告)日：2004-01-06

申请号：US09469300

申请日：1999-12-22

申请人： Thomas E. Wicker

发明人： Thomas E. Wicker

IPC分类号： H05H100

CPC分类号： H01J37/32495

摘要： A plasma processing chamber including a slip cast part having a surface thereof exposed to the interior space of the chamber. The slip cast part includes free silicon contained therein and a protective layer on the surface which protects the silicon from being attacked by plasma in the interior space of the chamber. The slip cast part can be made of slip cast silicon carbide coated with CVD silicon carbide. The slip cast part can comprise one or more parts of the chamber such as a wafer passage insert, a monolithic or tiled liner, a plasma screen, a showerhead, dielectric member, or the like. The slip cast part reduces particle contamination and reduces process drift in plasma processes such as plasma etching of dielectric materials such as silicon oxide.

公开(公告)号：US06656322B2

公开(公告)日：2003-12-02

申请号：US09982785

申请日：2001-10-22

申请人： Toshiaki Hongo ,  Tetsu Osawa

发明人： Toshiaki Hongo ,  Tetsu Osawa

IPC分类号： H05H100

CPC分类号： C23C16/511 ,  H01J37/32192

摘要： A plasma processing apparatus includes, in order to enhance the planar uniformity of the plasma density in a process space, a process chamber, an insulating plate attached airtightly to the ceiling of the process chamber, a planar antenna member placed above the insulating plate and including microwave radiation holes for transmitting therethrough microwave used for generating plasma, and a shield electrode member placed between the insulating plate and the planar antenna member for blocking out radiation of the microwave from the center and a part therearound of the planar antenna member.

公开(公告)号：US06623809B2

公开(公告)日：2003-09-23

申请号：US09413048

申请日：1999-10-06

申请人： Masahiko Tsukiashi ,  Hirohito Teraoka ,  Katsuyuki Hata ,  Michiko Tajima

发明人： Masahiko Tsukiashi ,  Hirohito Teraoka ,  Katsuyuki Hata ,  Michiko Tajima

IPC分类号： H05H100

CPC分类号： H01M2/162 ,  H01M10/345 ,  Y10T29/49108

摘要： There is provided a battery separator comprising synthetic resin fibers, wherein hydrophilization treatment, preferably plasma treatment is applied, and a contact angle to pure water indicates a value of 0 to 100 degrees; an alkali secondary battery in which a electrode group having the separator between a positive electrode and a negative electrode is sealed in a battery case together with an alkali electrolyte, in particular, a nickel-metal hydride secondary battery whose positive electrode is a nickel electrode and whose negative electrode is a hydrogen absorbing alloy electrode, wherein active substances of said nickel electrode comprising powders consisting essentially of nickel hydroxides and higher-order cobalt hydroxides formed a surface of a part or whole thereof are employed, thereby providing its superiority in both of self-discharge properties and charge and discharge cycle life performance.

摘要翻译： 提供了包含合成树脂纤维的电池隔板，其中进行亲水化处理，优选施加等离子体处理，并且与纯水的接触角表示0至100度的值; 具有在正极和负极之间具有隔膜的电极组的碱性二次电池与碱性电解质，特别是正极为镍电极的镍氢二次电池密封在电池壳体中， 其负极是吸氢合金电极，其中使用包含主要由氢氧化镍和高级氢氧化钴组成的粉末的所述镍电极的活性物质形成其一部分或全部的表面，从而提供其在自身中的优势 - 放电性能和充放电循环寿命性能。