Invention Grant
- Patent Title: Tailoring nitrogen profile in silicon oxynitride using rapid thermal annealing with ammonia under ultra-low pressure
- Patent Title (中): 在超低压下用氮气快速热退火，在氮氧化硅中调整氮气分布
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Application No.: US10772893Application Date: 2004-02-04
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Publication No.: US07658973B2Publication Date: 2010-02-09
- Inventor: Pravin K. Narwankar , Gary E. Miner , Arnaud Lepert
- Applicant: Pravin K. Narwankar , Gary E. Miner , Arnaud Lepert
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman
- Main IPC: B05D3/02
- IPC: B05D3/02 ; C23C16/00 ; B05D1/40 ; B05D3/12 ; H01L21/31 ; H01L21/469
Abstract:
A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.
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