Invention Grant
- Patent Title: Methods for depositing a material atop a substrate
- Patent Title (中): 在衬底上沉积材料的方法
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Application No.: US13470768Application Date: 2012-05-14
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Publication No.: US08642376B2Publication Date: 2014-02-04
- Inventor: Sukti Chatterjee , Annamalai Lakshmanan , Joe Griffith Cruz , Pravin K. Narwankar
- Applicant: Sukti Chatterjee , Annamalai Lakshmanan , Joe Griffith Cruz , Pravin K. Narwankar
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/36 ; H01L21/20 ; H01L21/322
Abstract:
Methods for depositing a material atop a substrate are provided herein. In some embodiments, a method of depositing a material atop a substrate may include exposing a substrate to a silicon containing gas and a reducing gas; increasing a flow rate of the silicon containing gas while decreasing a flow rate of the reducing gas to form a first layer; and depositing a second layer atop the first layer.
Public/Granted literature
- US20120295419A1 METHODS FOR DEPOSITING A MATERIAL ATOP A SUBSTRATE Public/Granted day:2012-11-22
Information query
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