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公开(公告)号：US20140054648A1
公开(公告)日：2014-02-27
申请号：US13595022
申请日：2012-08-27
申请人： Hiroshi Itokawa , Akira Hokazono
发明人： Hiroshi Itokawa , Akira Hokazono
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7853 , H01L29/66795 , H01L29/7848
摘要： Structures and methods are presented relating to formation of finFET semiconducting devices. A finFET device is presented comprising fin(s) formed on a substrate, wherein the fin(s) has a needle-shaped profile. The needle-shaped profile, in conjunction with at least a buffer layer or a doped layer, epitaxially formed on the fin(s), facilitates strain to be induced into the fin(s) by the buffer layer or the doped layer. The fin(s) can comprise silicon aligned on a first plane, while at least one of the buffer layer or the doped layer are grown on a second plane, the alignment of the first and second planes are disparate and are selected such that formation of the buffer layer or the doped layer generates a stress in the fin(s). The generated stress results in a strain being induced into the fin(s) channel region, which can improve electron and/or hole mobility in the channel.
摘要翻译： 提出了关于finFET半导体器件的形成的结构和方法。 提出了一种finFET器件，其包括形成在衬底上的鳍状物，其中鳍状物具有针状轮廓。 与在鳍上外延形成的至少一个缓冲层或掺杂层结合的针状轮廓有利于通过缓冲层或掺杂层将应变引入到鳍中。 鳍可以包括在第一平面上对准的硅，而缓冲层或掺杂层中的至少一个在第二平面上生长，第一和第二平面的对准是不同的，并且被选择为使得形成 缓冲层或掺杂层在散热片中产生应力。 产生的应力导致应变被引入鳍状沟道区域，这可以改善沟道中的电子和/或空穴迁移率。
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公开(公告)号：US20100006907A1
公开(公告)日：2010-01-14
申请号：US12494611
申请日：2009-06-30
申请人： Hiroshi ITOKAWA
发明人： Hiroshi ITOKAWA
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0653 , H01L21/76232 , H01L29/6659 , H01L29/7833
摘要： In a FET using a SiGe film as a channel region, dispersion of the Ge concentration in the SiGe film and dispersion of the film thickness of the SiGe film are suppressed.The FET includes: a substrate 101 having silicon as its main component; a trench 104 formed on a substrate 101 formed so as to surround an element region; a SiGe film 107 formed on the substrate 101 in the element region; and a silicon migration prevention layer 106 which is formed on a part 104a of a side wall of the trench 104 and which contains at least one of nitrogen and carbon.
摘要翻译： 在使用SiGe膜作为沟道区的FET中，抑制SiGe膜中的Ge浓度的分散和SiGe膜的膜厚的分散。 该FET包括：具有硅作为其主要成分的衬底101; 形成在形成为围绕元件区域的基板101上的沟槽104; 形成在元件区域中的基板101上的SiGe膜107; 以及硅迁移防止层106，其形成在沟槽104的侧壁的一部分104a上并且包含氮和碳中的至少一种。
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公开(公告)号：US20090263957A1
公开(公告)日：2009-10-22
申请号：US12401453
申请日：2009-03-10
申请人： Ichiro MIZUSHIMA , Shinji Mori , Masahiko Murano , Tsutomu Sato , Takashi Nakao , Hiroshi Itokawa
发明人： Ichiro MIZUSHIMA , Shinji Mori , Masahiko Murano , Tsutomu Sato , Takashi Nakao , Hiroshi Itokawa
IPC分类号： H01L21/20
CPC分类号： H01L21/02636 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.
摘要翻译： 根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由 的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中， 从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。
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公开(公告)号：US07557040B2
公开(公告)日：2009-07-07
申请号：US11644887
申请日：2006-12-26
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L29/665 , H01L29/6656 , H01L29/7833
摘要： A semiconductor device manufacturing method is disclosed. A silicon-containing gate electrode is first formed above the surface of a silicon-containing semiconductor substrate. Then, a sidewall insulating film is formed on the sidewall of the gate electrode and a film of metal is formed on the semiconductor substrate to cover the gate electrode and the sidewall insulating film. The front and back sides of the semiconductor substrate are heated through heat conduction by an ambient gas. Thereby, the metal is caused to react with silicon contained in the semiconductor substrate and the gate electrode to form a metal silicide film.
摘要翻译： 公开了半导体器件制造方法。 首先在含硅半导体衬底的表面上形成含硅栅电极。 然后，在栅电极的侧壁上形成侧壁绝缘膜，并且在半导体衬底上形成金属膜以覆盖栅电极和侧壁绝缘膜。 通过环境气体的热传导来加热半导体衬底的正面和背面。 由此，使金属与包含在半导体衬底和栅电极中的硅反应，形成金属硅化物膜。
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公开(公告)号：US20090152622A1
公开(公告)日：2009-06-18
申请号：US12271102
申请日：2008-11-14
申请人： Hiroshi Itokawa , Ichiro Mizushima
发明人： Hiroshi Itokawa , Ichiro Mizushima
IPC分类号： H01L29/94
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7834
摘要： A semiconductor device includes a first semiconductor region having a channel region, and containing silicon as a main component, second semiconductor regions sandwiching the first semiconductor region, formed of SiGe, and applying stress to the first semiconductor region, cap layers provided on the second semiconductor regions, and formed of silicon containing carbon or SiGe containing carbon, and silicide layers provided on the cap layers, and formed of nickel silicide or nickel-platinum alloy silicide.
摘要翻译： 半导体器件包括具有沟道区域并且以硅为主要成分的第一半导体区域，夹置由SiGe形成的第一半导体区域的第二半导体区域，并向第一半导体区域施加应力，设置在第二半导体层上的盖层 区域，并且由含硅的碳或含SiGe的碳形成，以及设置在盖层上的由硅化镍或镍 - 铂合金硅化物形成的硅化物层。
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公开(公告)号：US07456456B2
公开(公告)日：2008-11-25
申请号：US11616680
申请日：2006-12-27
申请人： Hiroshi Itokawa , Koji Yamakawa , Rainer Bruchhaus
发明人： Hiroshi Itokawa , Koji Yamakawa , Rainer Bruchhaus
IPC分类号： H01L29/94
CPC分类号： H01L28/65 , H01L27/10808 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： A semiconductor device according to the present invention comprises a semiconductor substrate, a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film, the upper electrode including metal oxide formed of ABO3 perovskite oxide and containing at least an Ru element as a B site element, and a metal film containing a Ti element being disposed between the dielectric film and the upper electrode.
摘要翻译： 根据本发明的半导体器件包括半导体衬底，包括设置在半导体衬底上的下电极的电容器，设置在下电极上方的电介质膜和设置在电介质膜上方的上电极，上电极包括金属氧化物 由ABO 3钙钛矿氧化物形成，并且至少含有Ru元素作为B位元素，以及含有Ti元素的金属膜设置在电介质膜和上电极之间。
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公开(公告)号：US07259094B2
公开(公告)日：2007-08-21
申请号：US11110933
申请日：2005-04-21
申请人： Katsuaki Natori , Keisuke Nakazawa , Koji Yamakawa , Hiroyuki Kanaya , Yoshinori Kumura , Hiroshi Itokawa , Osamu Arisumi
发明人： Katsuaki Natori , Keisuke Nakazawa , Koji Yamakawa , Hiroyuki Kanaya , Yoshinori Kumura , Hiroshi Itokawa , Osamu Arisumi
CPC分类号： H01L27/11502 , C23C14/08 , C23C14/5806 , H01L21/67115 , H01L27/11507 , H01L28/65
摘要： An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.
摘要翻译： 公开了一种用于制造半导体器件的装置，其包括容纳待处理基板的室，该基板具有含有至少一种将成为挥发性金属化合物的成分的金属元素的膜，加热基板 保持在所述室中的吸附剂和设置在所述室中并通过加热所述基板吸附由所述膜产生的挥发性金属化合物的吸附剂。
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公开(公告)号：US20070111334A1
公开(公告)日：2007-05-17
申请号：US11616680
申请日：2006-12-27
申请人： Hiroshi ITOKAWA , Koji Yamakawa , Rainer Bruchhaus
发明人： Hiroshi ITOKAWA , Koji Yamakawa , Rainer Bruchhaus
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L27/10808 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： A semiconductor device according to the present invention comprises a semiconductor substrate, a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film, the upper electrode including metal oxide formed of ABO.sub.3 perovskite oxide and containing at least an Ru element as a B site element, and a metal film containing a Ti element being disposed between the dielectric film and the upper electrode.
摘要翻译： 根据本发明的半导体器件包括半导体衬底，包括设置在半导体衬底上的下电极的电容器，设置在下电极上方的电介质膜和设置在电介质膜上方的上电极，上电极包括金属氧化物 由ABO 3钙钛矿氧化物形成，并且至少含有Ru元素作为B位元素，以及含有Ti元素的金属膜设置在电介质膜和上电极之间。
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公开(公告)号：US20050186767A1
公开(公告)日：2005-08-25
申请号：US11110933
申请日：2005-04-21
申请人： Katsuaki Natori , Keisuke Nakazawa , Koji Yamakawa , Hiroyuki Kanaya , Yoshinori Kumura , Hiroshi Itokawa , Osamu Arisumi
发明人： Katsuaki Natori , Keisuke Nakazawa , Koji Yamakawa , Hiroyuki Kanaya , Yoshinori Kumura , Hiroshi Itokawa , Osamu Arisumi
IPC分类号： H01L21/28 , C23C14/08 , C23C14/58 , C23C16/00 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/26 , H01L21/768 , H01L21/8234 , H01L21/8246 , H01L23/58 , H01L27/105 , H01L27/115 , H01L29/417 , H01L29/76 , H01L31/062
CPC分类号： H01L27/11502 , C23C14/08 , C23C14/5806 , H01L21/67115 , H01L27/11507 , H01L28/65
摘要： An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.
摘要翻译： 公开了一种用于制造半导体器件的装置，其包括容纳待处理基板的室，该基板具有含有至少一种将成为挥发性金属化合物的成分的金属元素的膜，加热基板 保持在所述室中的吸附剂和设置在所述室中并通过加热所述基板吸附由所述膜产生的挥发性金属化合物的吸附剂。
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公开(公告)号：US20070166977A1
公开(公告)日：2007-07-19
申请号：US11644887
申请日：2006-12-26
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/28518 , H01L29/665 , H01L29/6656 , H01L29/7833
摘要： A semiconductor device manufacturing method is disclosed. A silicon-containing gate electrode is first formed above the surface of a silicon-containing semiconductor substrate. Then, a sidewall insulating film is formed on the sidewall of the gate electrode and a film of metal is formed on the semiconductor substrate to cover the gate electrode and the sidewall insulating film. The front and back sides of the semiconductor substrate are heated through heat conduction by an ambient gas. Thereby, the metal is caused to react with silicon contained in the semiconductor substrate and the gate electrode to form a metal silicide film.
摘要翻译： 公开了半导体器件制造方法。 首先在含硅半导体衬底的表面上形成含硅栅电极。 然后，在栅电极的侧壁上形成侧壁绝缘膜，并且在半导体衬底上形成金属膜以覆盖栅电极和侧壁绝缘膜。 通过环境气体的热传导来加热半导体衬底的正面和背面。 由此，使金属与包含在半导体衬底和栅电极中的硅反应，形成金属硅化物膜。
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