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公开(公告)号：US20050274999A1
公开(公告)日：2005-12-15
申请号：US10882203
申请日：2004-07-02
申请人： Hiroshi Itokawa , Koji Yamakawa , Rainer Bruchhaus
发明人： Hiroshi Itokawa , Koji Yamakawa , Rainer Bruchhaus
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/108 , H01L27/115 , H01L31/062
CPC分类号： H01L28/65 , H01L27/10808 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： A semiconductor device according to the present invention comprises a semiconductor substrate, a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film, the upper electrode including metal oxide formed of ABO3 perovskite oxide and containing at least an Ru element as a B site element, and a metal film containing a Ti element being disposed between the dielectric film and the upper electrode.
摘要翻译： 根据本发明的半导体器件包括半导体衬底，包括设置在半导体衬底上的下电极的电容器，设置在下电极上方的电介质膜和设置在电介质膜上方的上电极，上电极包括金属氧化物 由ABO 3钙钛矿氧化物形成，并且至少含有Ru元素作为B位元素，以及含有Ti元素的金属膜设置在电介质膜和上电极之间。
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公开(公告)号：US07456456B2
公开(公告)日：2008-11-25
申请号：US11616680
申请日：2006-12-27
申请人： Hiroshi Itokawa , Koji Yamakawa , Rainer Bruchhaus
发明人： Hiroshi Itokawa , Koji Yamakawa , Rainer Bruchhaus
IPC分类号： H01L29/94
CPC分类号： H01L28/65 , H01L27/10808 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： A semiconductor device according to the present invention comprises a semiconductor substrate, a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film, the upper electrode including metal oxide formed of ABO3 perovskite oxide and containing at least an Ru element as a B site element, and a metal film containing a Ti element being disposed between the dielectric film and the upper electrode.
摘要翻译： 根据本发明的半导体器件包括半导体衬底，包括设置在半导体衬底上的下电极的电容器，设置在下电极上方的电介质膜和设置在电介质膜上方的上电极，上电极包括金属氧化物 由ABO 3钙钛矿氧化物形成，并且至少含有Ru元素作为B位元素，以及含有Ti元素的金属膜设置在电介质膜和上电极之间。
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公开(公告)号：US20070111334A1
公开(公告)日：2007-05-17
申请号：US11616680
申请日：2006-12-27
申请人： Hiroshi ITOKAWA , Koji Yamakawa , Rainer Bruchhaus
发明人： Hiroshi ITOKAWA , Koji Yamakawa , Rainer Bruchhaus
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L27/10808 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： A semiconductor device according to the present invention comprises a semiconductor substrate, a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film, the upper electrode including metal oxide formed of ABO.sub.3 perovskite oxide and containing at least an Ru element as a B site element, and a metal film containing a Ti element being disposed between the dielectric film and the upper electrode.
摘要翻译： 根据本发明的半导体器件包括半导体衬底，包括设置在半导体衬底上的下电极的电容器，设置在下电极上方的电介质膜和设置在电介质膜上方的上电极，上电极包括金属氧化物 由ABO 3钙钛矿氧化物形成，并且至少含有Ru元素作为B位元素，以及含有Ti元素的金属膜设置在电介质膜和上电极之间。
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公开(公告)号：US20090190388A1
公开(公告)日：2009-07-30
申请号：US12019364
申请日：2008-01-24
CPC分类号： H01L27/101 , H01L27/2436 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/141 , H01L45/146 , H01L45/147 , H01L45/1683
摘要： A method of fabricating a resistive storage device is provided. The method generally comprises providing an electrode structure stack comprising a first electrode and an electrode structure mask arranged at the first electrode, forming a support structure at least partly at the electrode structure mask, removing the electrode structure mask to leave a storage region window in the support structure, and forming a resistive storage region in the storage region window at the first electrode.
摘要翻译： 提供一种制造电阻存储装置的方法。 该方法通常包括提供包括布置在第一电极处的第一电极和电极结构掩模的电极结构堆叠，至少部分地形成在电极结构掩模处的支撑结构，去除电极结构掩模以将存储区窗口留在 并且在第一电极的存储区窗口中形成电阻存储区。
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公开(公告)号：US07199002B2
公开(公告)日：2007-04-03
申请号：US10651614
申请日：2003-08-29
申请人： Karl Hornik , Rainer Bruchhaus , Nicolas Nagel
发明人： Karl Hornik , Rainer Bruchhaus , Nicolas Nagel
IPC分类号： H01L27/108
CPC分类号： H01L28/56 , H01L21/31616 , H01L21/31683
摘要： A process for the fabrication of a ferroelectric capacitor comprising depositing a layer of Ti 5 over an insulating layer 3 of Al2O3, and oxidising the Ti layer to form a TiO2 layer 7. Subsequently, a layer of PZT 9 is formed over the TiO2 layer 7. The PZT layer 9 is subjected to an annealing step in which, due to the presence of the TiO2 layer 7 it crystallises to form a layer 11 with a high degree of (111)-texture.
摘要翻译： 一种用于制造铁电电容器的方法，包括在Al 2 O 3 3的绝缘层3上沉积Ti 5层，并氧化Ti层以形成TiO 然后，在TiO 2层7上形成PZT 9层.PZT层9经历退火步骤，其中由于 TiO 2层7的存在使其结晶形成具有高度（111） - 纹理的层11。
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公开(公告)号：US20060049440A1
公开(公告)日：2006-03-09
申请号：US11216678
申请日：2005-08-31
申请人： Rainer Bruchhaus , Martin Gutsche , Cay-Uwe Pinnow
发明人： Rainer Bruchhaus , Martin Gutsche , Cay-Uwe Pinnow
IPC分类号： H01L29/94
CPC分类号： G11C11/22 , G11C11/221 , H01L27/11502 , H01L27/11507
摘要： A ferroelectric memory arrangement having memory cells, in each of which a vertical ferroelectric storage capacitor, which includes vertical electrodes and a ferroelectric dielectric between the vertical electrodes, is connected to a select transistor, the ferroelectric dielectric a plurality of ferroelectric layers, between each of which is arranged an insulating separating layer.
摘要翻译： 具有存储单元的铁电存储器装置，其中每个具有垂直电极和垂直电极之间的铁电电介质的垂直铁电存储电容器连接到选择晶体管，铁电介质在多个铁电层之间， 其布置有绝缘分离层。
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公开(公告)号：US06773986B2
公开(公告)日：2004-08-10
申请号：US10186662
申请日：2002-07-01
申请人： Rainer Bruchhaus , Gerhard Enders , Walter Hartner , Matthias Krönke , Thomas Mikolajick , Nicolas Nagel , Michael Röhner
发明人： Rainer Bruchhaus , Gerhard Enders , Walter Hartner , Matthias Krönke , Thomas Mikolajick , Nicolas Nagel , Michael Röhner
IPC分类号： H01L218242
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： To achieve a highest possible integration density in a semiconductor memory device having storage capacitors as storage elements, the method according to the invention forms the capacitor devices in substantially vertically extending fashion, to, as a result, achieve a substantially three-dimensional configuration and an configuration extending into the third dimension for the capacitor devices, a contact connection of the storage capacitors being formed after the production of the storage capacitors.
摘要翻译： 为了在具有存储电容器作为存储元件的半导体存储器件中实现最高可能的积分密度，根据本发明的方法以基本上垂直延伸的方式形成电容器器件，结果实现基本上三维配置和 配置延伸到用于电容器器件的第三维度中，在存储电容器的生产之后形成存储电容器的接触连接。
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公开(公告)号：US06704219B2
公开(公告)日：2004-03-09
申请号：US10186645
申请日：2002-07-01
申请人： Rainer Bruchhaus , Gerhard Enders , Walter Hartner , Matthias Krönke , Thomas Mikolajick , Nicolas Nagel , Michael Röhner
发明人： Rainer Bruchhaus , Gerhard Enders , Walter Hartner , Matthias Krönke , Thomas Mikolajick , Nicolas Nagel , Michael Röhner
IPC分类号： G11C1122
CPC分类号： H01L27/11502 , H01L28/86
摘要： To manufacture FeRAM memories in a particularly space-saving fashion and, thus, increase the storage density, a manufacturing method forms at least some of the multiplicity of capacitor devices used as storage elements with a multiplicity of individual capacitors that are connected in parallel with one another. The individual capacitors have ferroelectric or paraelectric dielectric regions with different coercitive voltages such that there is a resulting multiplicity of storage states for each of the individual capacitors.
摘要翻译： 为了以特别节省空间的方式制造FeRAM存储器，因此增加存储密度，制造方法形成用作存储元件的多个电容器器件中的至少一些，其中多个单独的电容器与一个并联连接 另一个。 各个电容器具有不同强制电压的铁电或对称电介质区域，使得每个单独的电容器存在多个存储状态。
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公开(公告)号：US06300652B1
公开(公告)日：2001-10-09
申请号：US08755456
申请日：1996-11-22
申请人： Lothar Risch , Franz Hofmann , Rainer Bruchhaus , Wolfram Wersing
发明人： Lothar Risch , Franz Hofmann , Rainer Bruchhaus , Wolfram Wersing
IPC分类号： H01L27108
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： A memory cell configuration and a method for its production include stacked capacitors and use a vertical storage capacitor having a ferroelectric or paraelectric storage dielectric. In order to produce the storage capacitor, a dielectric layer for the storage dielectric is produced over the whole area. The dielectric layer is subsequently structured and first electrodes and second electrodes for the storage capacitors are formed. The invention is suitable for Gbit DRAMs and for nonvolatile memories.
摘要翻译： 存储单元配置及其制造方法包括堆叠电容器，并且使用具有铁电或顺电存储电介质的垂直存储电容器。 为了制造存储电容器，在整个区域上产生用于存储电介质的电介质层。 随后构造电介质层，形成用于存储电容器的第一电极和第二电极。 本发明适用于Gbit DRAM和非易失性存储器。
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公开(公告)号：US09001558B2
公开(公告)日：2015-04-07
申请号：US14000285
申请日：2012-02-03
申请人： Roland Daniel Rosezin , Florian Lentz , Rainer Bruchhaus , Eike Linn , Ilia Valov , Rainer Waser , Stefan Tappertzhofen , Lutz Nielen
发明人： Roland Daniel Rosezin , Florian Lentz , Rainer Bruchhaus , Eike Linn , Ilia Valov , Rainer Waser , Stefan Tappertzhofen , Lutz Nielen
CPC分类号： G11C13/004 , G11C13/0007 , G11C13/0061 , G11C2013/0073 , G11C2213/73 , G11C2213/76
摘要： A method for reading out a memory element comprises a series connection. of at least two memory cells A and B each have a stable state A0 or B0 having higher resistance and a stable state A1 or B1 having lower electrical resistance. An electrical variable of the series circuit is measured and an electrical variable is selected for this measurement, to which the memory cell A in state A0 makes a different contribution than the memory cell B in state B0 and/or to which the memory cell A instate A1 makes a different contribution than the memory cell B in state B1. The two state combinations A1 and B0 or A0 and B1 then result in differing values for the electrical variable that is measured by way of the series circuit. These state combinations can thus be distinguished from each other without having to change the logic state of the memory element during reading.
摘要翻译： 读出存储元件的方法包括串联连接。 至少两个存储单元A和B各自具有具有较高电阻的稳定状态A0或B0以及具有较低电阻的稳定状态A1或B1。 测量串联电路的电变量，并为此测量选择电变量，状态A0中的存储单元A与状态B0中的存储单元B和/或存储单元A设置的存储单元A的贡献不同 A1在状态B1中与存储单元B的贡献不同。 两个状态组合A1和B0或A0和B1然后导致通过串联电路测量的电变量的不同值。 因此，这些状态组合可以彼此区分，而不必在读取期间改变存储元件的逻辑状态。
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