发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US11616680申请日： 2006-12-27
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公开(公告)号： US20070111334A1公开(公告)日： 2007-05-17
- 发明人: Hiroshi ITOKAWA , Koji Yamakawa , Rainer Bruchhaus
- 申请人： Hiroshi ITOKAWA , Koji Yamakawa , Rainer Bruchhaus
- 申请人地址： JP Tokyo DE Munich
- 专利权人： KABUSHHIKI KAISHA TOSHIBA,INFINEON TECNOLOGIES AG
- 当前专利权人： KABUSHHIKI KAISHA TOSHIBA,INFINEON TECNOLOGIES AG
- 当前专利权人地址： JP Tokyo DE Munich
- 优先权： JP2004-172696 20040610
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A semiconductor device according to the present invention comprises a semiconductor substrate, a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film, the upper electrode including metal oxide formed of ABO.sub.3 perovskite oxide and containing at least an Ru element as a B site element, and a metal film containing a Ti element being disposed between the dielectric film and the upper electrode.
公开/授权文献
- US07456456B2 Semiconductor device and method of manufacturing the same 公开/授权日：2008-11-25
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