发明申请
- 专利标题： Method of manufacture of semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US11644887申请日： 2006-12-26
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公开(公告)号： US20070166977A1公开(公告)日： 2007-07-19
- 发明人: Hiroshi Itokawa , Yoshimasa Kawase , Toshihiko Iinuma , Haruko Akutsu , Kyoichi Suguro
- 申请人： Hiroshi Itokawa , Yoshimasa Kawase , Toshihiko Iinuma , Haruko Akutsu , Kyoichi Suguro
- 优先权： JP2005-373034 20051226
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/44
摘要：
A semiconductor device manufacturing method is disclosed. A silicon-containing gate electrode is first formed above the surface of a silicon-containing semiconductor substrate. Then, a sidewall insulating film is formed on the sidewall of the gate electrode and a film of metal is formed on the semiconductor substrate to cover the gate electrode and the sidewall insulating film. The front and back sides of the semiconductor substrate are heated through heat conduction by an ambient gas. Thereby, the metal is caused to react with silicon contained in the semiconductor substrate and the gate electrode to form a metal silicide film.
公开/授权文献
- US07557040B2 Method of manufacture of semiconductor device 公开/授权日：2009-07-07
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