公开(公告)号：US20140263527A1

公开(公告)日：2014-09-18

申请号：US14343986

申请日：2011-09-14

申请人： Takafumi Mukohara ,  Takashi Nakao

发明人： Takafumi Mukohara ,  Takashi Nakao

IPC分类号： B65H35/00 ,  B65H35/06

CPC分类号： B65H35/002 ,  B65D25/20 ,  B65D83/0841 ,  B65D85/672 ,  B65H35/0066 ,  B65H35/06 ,  Y10T225/243

摘要： An object of the present invention is to allow a flap of a roll storage case to be easily opened and closed by means of a flap cover and to prevent the flap cover from slipping off from the flap of the roll storage case even when the flap is opened and closed many times. A flap cover includes an upper plate covering an upper surface portion of a flap, a front plate covering a front surface portion of the flap, and a pair of side plates covering opposite side surface portions of the flap. Each of the side plates includes a locking portion which projects inward from the side plate and which is able to be locked on a lower end surface of the side surface portion of the flap.

摘要翻译： 本发明的目的在于，通过翼片盖可以容易地将卷存储盒的翼片打开和关闭，并且即使当翼片是翼片时，防止翼片盖从卷存储盒的翼片滑落 多次关闭。 翼片盖包括覆盖翼片的上表面部分的上板，覆盖翼片的前表面部分的前板和覆盖翼片的相对侧表面部分的一对侧板。 每个侧板包括从侧板向内突出并且能够锁定在翼片的侧表面部分的下端表面上的锁定部分。

公开(公告)号：US08441061B2

公开(公告)日：2013-05-14

申请号：US12868450

申请日：2010-08-25

申请人： Takashi Nakao ,  Kazuaki Iwasawa

发明人： Takashi Nakao ,  Kazuaki Iwasawa

IPC分类号： H01L27/115

CPC分类号： H01L29/66477 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/792 ,  H01L29/7926

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked structural body, a semiconductor pillar, and a memory unit. The stacked structural body is provided on a major surface of the substrate. The stacked structural body includes electrode films alternately stacked with inter-electrode insulating films in a direction perpendicular to the major surface. The pillar pierces the body in the direction. The memory unit is provided at an intersection between the pillar and the electrode films. The electrode films include at least one of amorphous silicon and polysilicon. The stacked structural body includes first and second regions. A distance from the second region to the substrate is greater than a distance from the first region to the substrate. A concentration of an additive included in the electrode film in the first region is different from that included in the electrode film in the second region.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括衬底，层叠结构体，半导体柱和存储单元。 层叠结构体设置在基板的主表面上。 叠层结构体包括在垂直于主表面的方向上交替层叠有电极间绝缘膜的电极膜。 支柱沿着方向刺穿身体。 存储单元设置在柱和电极膜之间的交点处。 电极膜包括非晶硅和多晶硅中的至少一种。 层叠结构体包括第一和第二区域。 从第二区域到基板的距离大于从第一区域到基板的距离。 包含在第一区域中的电极膜中的添加剂的浓度与第二区域中的电极膜中包含的添加剂的浓度不同。

公开(公告)号：US08259553B2

公开(公告)日：2012-09-04

申请号：US12703294

申请日：2010-02-10

申请人： Fumiaki Nakano ,  Nobuhiko Ando ,  Noriaki Nishi ,  Takashi Nakao ,  Hiroaki Nakagawa ,  Yutaka Tentaku

发明人： Fumiaki Nakano ,  Nobuhiko Ando ,  Noriaki Nishi ,  Takashi Nakao ,  Hiroaki Nakagawa ,  Yutaka Tentaku

IPC分类号： G11B7/135

CPC分类号： G11B7/1353 ,  G11B7/0903 ,  G11B7/131 ,  G11B2007/0013

摘要： An optical pickup includes: a light source outputting a light beam; an objective lens collecting the light beam on a target recording layer as a target of plural recording layers provided in an optical disc; a lens moving unit moving the objective lens in a tracking direction nearly orthogonal to track grooves helically or coaxially formed in the target recording layer; a collective lens collecting a reflected light beam formed when the light beam is reflected by the optical disc; a diffraction optical element diffracting part of the reflected first-order light beam in predetermined directions as first, second, third and fourth beams; and a photodetector receiving the first and second beams using first and second light receiving areas, and generating light reception signals, and receiving the third and fourth beams using third and fourth light receiving areas, and generates light reception signals.

摘要翻译： 光拾取器包括：输出光束的光源; 将目标记录层上的光束收集成设置在光盘中的多个记录层的目标物的物镜; 透镜移动单元，沿跟踪方向移动所述物镜，所述跟踪方向与所述目标记录层中螺旋或同轴地形成的轨道槽几乎正交; 收集当光束被光盘反射时形成的反射光束的集体透镜; 衍射光学元件将预定方向的反射一次光束的一部分衍射为第一，第二，第三和第四光束; 以及光电检测器，其使用第一和第二光接收区域接收第一和第二光束，并且产生光接收信号，并且使用第三和第四光接收区域接收第三和第四光束，并且产生光接收信号。

公开(公告)号：US08071483B2

公开(公告)日：2011-12-06

申请号：US12564594

申请日：2009-09-22

申请人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

发明人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/0272 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  Y10S438/905

摘要： In a manufacturing process of a semiconductor device by forming a structure film on a substrate in a reaction chamber of a manufacturing apparatus, cleaning inside the reaction chamber is performed. That is, a precoat film made of a silicon nitride film containing boron is deposited on an inner wall of the reaction chamber, a silicon nitride film not containing boron is formed as the structure film on the substrate in the reaction chamber, and the inner wall of the reaction chamber is dry etched to be cleaned. At this time, the dry etching is terminated after boron is detected in a gas exhausted from the reaction chamber.

摘要翻译： 在通过在制造装置的反应室中的基板上形成结构膜的半导体装置的制造工序中，进行反应室内的清洗。 也就是说，在反应室的内壁上沉积由含硼的氮化硅膜制成的预涂膜，在反应室中的基板上形成不含硼的氮化硅膜作为结构膜，内壁 的反应室被干蚀刻以进行清洁。 此时，在从反应室排出的气体中检测到硼后，干法蚀刻终止。

公开(公告)号：US07972104B2

公开(公告)日：2011-07-05

申请号：US11392548

申请日：2006-03-30

申请人： Tamotsu Shiwaku ,  Takashi Nakao

发明人： Tamotsu Shiwaku ,  Takashi Nakao

IPC分类号： B65G65/00

CPC分类号： B65G37/02 ,  B65G1/0457 ,  B65G1/0464 ,  B65G47/5104 ,  B65G2201/0297

摘要： A lower buffer 6 is placed under a traveling rail for an overhead traveling vehicle 16, and a side buffer 8 is provided on a side of the traveling rail. The overhead traveling vehicle 16 has a hoisting frame 30, and a lateral feeding unit 24 for laterally feeding the hoisting frame 30.

摘要翻译： 下部缓冲器6配置在高架行驶车辆16的行进轨道的下方，侧面缓冲器8设置在行进轨道的一侧。 架空行驶车辆16具有起吊架30和横向供给起重机架30的侧向供给单元24。

公开(公告)号：US07863166B2

公开(公告)日：2011-01-04

申请号：US12646563

申请日：2009-12-23

申请人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

发明人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

IPC分类号： H01L21/20

CPC分类号： H01L27/115 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203 ,  H01L29/66825

摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.

摘要翻译： 一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在 开口部。 然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。 接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。 然后，在硅单晶层上形成存储单元阵列。

公开(公告)号：US20100190317A1

公开(公告)日：2010-07-29

申请号：US12691483

申请日：2010-01-21

申请人： Kazuaki IWASAWA ,  Takeshi Hoshi ,  Keisuke Nakazawa ,  Shogo Matsuo ,  Takashi Nakao ,  Ryu Kato ,  Tetsuya Kai ,  Katsuyuki Sekine

发明人： Kazuaki IWASAWA ,  Takeshi Hoshi ,  Keisuke Nakazawa ,  Shogo Matsuo ,  Takashi Nakao ,  Ryu Kato ,  Tetsuya Kai ,  Katsuyuki Sekine

IPC分类号： H01L21/762

CPC分类号： H01L21/76229

摘要： A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.

摘要翻译： 半导体器件制造方法在半导体衬底中具有形成元件隔离沟槽，在元件隔离沟槽的内部形成硅化合物膜，以便嵌入元件隔离沟槽，在第一温度下进行第一氧化处理以使表面 所述硅化合物膜能够通过氧化剂和杂质而不允许含有硅原子的挥发性物质通过的挥发性物质排放防止层，并且在比所述第一温度高的第二温度下进行第二氧化处理 温度以在元件隔离槽内形成被覆氧化硅膜。

公开(公告)号：US07762559B2

公开(公告)日：2010-07-27

申请号：US11918996

申请日：2006-04-13

申请人： Kiyohiro Suzuki ,  Manshu Kameike ,  Shuji Yoshitsune ,  Takashi Nakao

发明人： Kiyohiro Suzuki ,  Manshu Kameike ,  Shuji Yoshitsune ,  Takashi Nakao

IPC分类号： F16J15/10

CPC分类号： F16J15/104 ,  F16J15/061

摘要： A gasket in an integrated double-layered structure comprising an outer layer and an inner layer enclosed by the outer layer, in which the outer layer is a low-hardness rubber layer having a JIS A hardness of 40-70, and the inner layer is a high-hardness rubber layer having a JIS A hardness of 80-100, where a ratio h/h0 of height h of the inner layer to height h0 of the outer layer is preferably 0.3-0.8, and ratio d/d0 of height d of the inner layer to width d0 of the outer layer is preferably 0.5-0.8 in the longitudal cross-section as view from the width direction of the gasket, has a low reaction force, and distinguished sealability and insertibility, and used as inserted between two members, one of which has a groove for insertion.

摘要翻译： 一种整体式双层结构的垫圈，其包括由外层包围的外层和内层，外层是JIS A硬度为40-70的低硬度橡胶层，内层为 JIS A硬度为80〜100的高硬度橡胶层，外层的高度h与高度h0的比例h / h0优选为0.3〜0.8，高度d的比d / d0 的内层宽度d0在从垫片的宽度方向观察的纵向截面中优选为0.5〜0.8，具有低的反作用力，并且具有显着的密封性和可插入性，并且用于插入两个 其中一个具有用于插入的凹槽。

公开(公告)号：US07703396B2

公开(公告)日：2010-04-27

申请号：US11183841

申请日：2005-07-19

申请人： Takashi Nakao ,  Yoichi Nakamura ,  Akihiko Ishiura

发明人： Takashi Nakao ,  Yoichi Nakamura ,  Akihiko Ishiura

IPC分类号： B61B3/00

CPC分类号： G05D1/0229

摘要： In a curve section, a comb tooth mark 28 is provided concentrically with a center line 44 of a running rail 4. A comb tooth sensor 34 on an overhead running vehicle 2 reads comb teeth 40. Then, corrections are made using the ratio of the radius of curvature (R) of the center line 44 and the radius of curvature (r) of the comb tooth mark 28. An encoder interpolates the areas between the teeth 40. Then, the position of the overhead running vehicle 2 in the curve section is determined. The present invention thus enables the exact position of the overhead running vehicle 2 to be recognized even when the overhead running vehicle 2 is located in a curve section. This makes it possible to provide a load port in a curve section.

摘要翻译： 在曲线部分中，梳齿标记28与跑道4的中心线44同心地设置。架空运行车辆2上的梳齿传感器34读取梳齿40.然后，使用 中心线44的曲率半径（R）和梳齿标记28的曲率半径（r）。编码器对齿40之间的区域进行内插。然后，架空运行车辆2的曲线部分的位置 决心，决意，决定。 因此，本发明即使在架空运行车辆2位于曲线部分中时也能够识别架空运行车辆2的精确位置。 这使得可以在曲线部分中提供负载端口。

公开(公告)号：US20100044970A1

公开(公告)日：2010-02-25

申请号：US11918996

申请日：2006-04-13

申请人： Kiyohiro Suzuki ,  Manshu Kameike ,  Shuji Yoshitsune ,  Takashi Nakao

发明人： Kiyohiro Suzuki ,  Manshu Kameike ,  Shuji Yoshitsune ,  Takashi Nakao

IPC分类号： F02F11/00

CPC分类号： F16J15/104 ,  F16J15/061

摘要： A gasket in an integrated double-layered structure comprising an outer layer and an inner layer enclosed by the outer layer, in which the outer layer is a low-hardness rubber layer having a JIS A hardness of 40-70, and the inner layer is a high-hardness rubber layer having a JIS A hardness of 80-100, where a ratio h/h0 of height h of the inner layer to height h0 of the outer layer is preferably 0.3-0.8, and ratio d/d0 of height d of the inner layer to width d0 of the outer layer is preferably 0.5-0.8 in the longitudal cross-section as view from the width direction of the gasket, has a low reaction force, and distinguished sealability and insertibility, and used as inserted between two members, one of which has a groove for insertion.