公开(公告)号：US08071483B2

公开(公告)日：2011-12-06

申请号：US12564594

申请日：2009-09-22

申请人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

发明人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/0272 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  Y10S438/905

摘要： In a manufacturing process of a semiconductor device by forming a structure film on a substrate in a reaction chamber of a manufacturing apparatus, cleaning inside the reaction chamber is performed. That is, a precoat film made of a silicon nitride film containing boron is deposited on an inner wall of the reaction chamber, a silicon nitride film not containing boron is formed as the structure film on the substrate in the reaction chamber, and the inner wall of the reaction chamber is dry etched to be cleaned. At this time, the dry etching is terminated after boron is detected in a gas exhausted from the reaction chamber.

摘要翻译： 在通过在制造装置的反应室中的基板上形成结构膜的半导体装置的制造工序中，进行反应室内的清洗。 也就是说，在反应室的内壁上沉积由含硼的氮化硅膜制成的预涂膜，在反应室中的基板上形成不含硼的氮化硅膜作为结构膜，内壁 的反应室被干蚀刻以进行清洁。 此时，在从反应室排出的气体中检测到硼后，干法蚀刻终止。

公开(公告)号：US08536699B2

公开(公告)日：2013-09-17

申请号：US13272426

申请日：2011-10-13

申请人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

发明人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

IPC分类号： H01L23/34

CPC分类号： C23C16/0272 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  Y10S438/905

摘要： In a manufacturing process of a semiconductor device by forming a structure film on a substrate in a reaction chamber of a manufacturing apparatus, cleaning inside the reaction chamber is performed. That is, a precoat film made of a silicon nitride film containing boron is deposited on an inner wall of the reaction chamber, a silicon nitride film not containing boron is formed as the structure film on the substrate in the reaction chamber, and the inner wall of the reaction chamber is dry etched to be cleaned. At this time, the dry etching is terminated after boron is detected in a gas exhausted from the reaction chamber.

摘要翻译： 在通过在制造装置的反应室中的基板上形成结构膜的半导体装置的制造工序中，进行反应室内的清洗。 也就是说，在反应室的内壁上沉积由含硼的氮化硅膜制成的预涂膜，在反应室中的基板上形成不含硼的氮化硅膜作为结构膜，内壁 的反应室被干蚀刻以进行清洁。 此时，在从反应室排出的气体中检测到硼后，干法蚀刻终止。

公开(公告)号：US20120031331A1

公开(公告)日：2012-02-09

申请号：US13272426

申请日：2011-10-13

申请人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

发明人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

IPC分类号： H01L21/66 ,  B05C11/00 ,  C23C16/455

CPC分类号： C23C16/0272 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  Y10S438/905

摘要： In a manufacturing process of a semiconductor device by forming a structure film on a substrate in a reaction chamber of a manufacturing apparatus, cleaning inside the reaction chamber is performed. That is, a precoat film made of a silicon nitride film containing boron is deposited on an inner wall of the reaction chamber, a silicon nitride film not containing boron is formed as the structure film on the substrate in the reaction chamber, and the inner wall of the reaction chamber is dry etched to be cleaned. At this time, the dry etching is terminated after boron is detected in a gas exhausted from the reaction chamber.

摘要翻译： 在通过在制造装置的反应室中的基板上形成结构膜的半导体装置的制造工序中，进行反应室内的清洗。 也就是说，在反应室的内壁上沉积由含硼的氮化硅膜制成的预涂膜，在反应室中的基板上形成不含硼的氮化硅膜作为结构膜，内壁 的反应室被干蚀刻以进行清洁。 此时，在从反应室排出的气体中检测到硼后，干法蚀刻终止。

公开(公告)号：US20100112822A1

公开(公告)日：2010-05-06

申请号：US12564594

申请日：2009-09-22

申请人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

发明人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

IPC分类号： H01L21/465

CPC分类号： C23C16/0272 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  Y10S438/905

摘要： In a manufacturing process of a semiconductor device by forming a structure film on a substrate in a reaction chamber of a manufacturing apparatus, cleaning inside the reaction chamber is performed. That is, a precoat film made of a silicon nitride film containing boron is deposited on an inner wall of the reaction chamber, a silicon nitride film not containing boron is formed as the structure film on the substrate in the reaction chamber, and the inner wall of the reaction chamber is dry etched to be cleaned. At this time, the dry etching is terminated after boron is detected in a gas exhausted from the reaction chamber.

摘要翻译： 在通过在制造装置的反应室中的基板上形成结构膜的半导体装置的制造工序中，进行反应室内的清洗。 也就是说，在反应室的内壁上沉积由含硼的氮化硅膜制成的预涂膜，在反应室中的基板上形成不含硼的氮化硅膜作为结构膜，内壁 的反应室被干蚀刻以进行清洁。 此时，在从反应室排出的气体中检测到硼后，干法蚀刻终止。

公开(公告)号：US08784568B2

公开(公告)日：2014-07-22

申请号：US13051804

申请日：2011-03-18

申请人： Kenichiro Toratani ,  Takashi Nakao

发明人： Kenichiro Toratani ,  Takashi Nakao

IPC分类号： B08B5/04

CPC分类号： C23C16/4412 ,  C23C16/4405

摘要： In one embodiment, a method of cleaning a semiconductor manufacturing apparatus includes supplying a cleaning gas for removing a deposition film deposited on an inside wall of a treatment chamber through a supply pipe of the treatment chamber so that a supply amount of the cleaning gas from the supply pipe per unit time is greater than an exhaust amount of the cleaning gas from an exhaust pipe of the treatment chamber per unit time. The method further includes supplying an inert gas to fill the supply pipe with the inert gas.

摘要翻译： 在一个实施例中，一种清洁半导体制造装置的方法包括：通过处理室的供给管供给用于去除沉积在处理室的内壁上的沉积膜的清洁气体，使得来自 每单位时间的供给管大于每单位时间从处理室的排气管排出的净化气体的排出量。 该方法还包括供给惰性气体以向供应管填充惰性气体。

公开(公告)号：US20110232686A1

公开(公告)日：2011-09-29

申请号：US13051804

申请日：2011-03-18

申请人： Kenichiro Toratani ,  Takashi Nakao

发明人： Kenichiro Toratani ,  Takashi Nakao

IPC分类号： B08B5/00 ,  C23F1/08

CPC分类号： C23C16/4412 ,  C23C16/4405

摘要： In one embodiment, a method of cleaning a semiconductor manufacturing apparatus includes supplying a cleaning gas for removing a deposition film deposited on an inside wall of a treatment chamber through a supply pipe of the treatment chamber so that a supply amount of the cleaning gas from the supply pipe per unit time is greater than an exhaust amount of the cleaning gas from an exhaust pipe of the treatment chamber per unit time. The method further includes supplying an inert gas to fill the supply pipe with the inert gas.

摘要翻译： 在一个实施例中，一种清洁半导体制造装置的方法包括：通过处理室的供给管供给用于去除沉积在处理室的内壁上的沉积膜的清洁气体，使得来自 每单位时间的供给管大于每单位时间从处理室的排气管排出的净化气体的排出量。 该方法还包括供给惰性气体以向供应管填充惰性气体。

公开(公告)号：US20100078045A1

公开(公告)日：2010-04-01

申请号：US12557264

申请日：2009-09-10

申请人： Kenichiro TORATANI ,  Fumiki Aiso ,  Takashi Nakao ,  Kazuhei Yoshinaga

发明人： Kenichiro TORATANI ,  Fumiki Aiso ,  Takashi Nakao ,  Kazuhei Yoshinaga

IPC分类号： B08B7/00 ,  C23C16/54

CPC分类号： B08B5/00 ,  C23C16/4405 ,  C23C16/45514 ,  H01L21/67017 ,  H01L21/67109

摘要： An LPCVD apparatus is provided with a processing chamber and a reaction cooling apparatus. The reaction cooling apparatus is placed outside the processing chamber and is configured to generate hydrogen fluoride gas by reaction of hydrogen gas and fluorine gas and to cool the hydrogen fluoride gas. The hydrogen fluoride gas cooled by the reaction cooling apparatus is supplied into the processing chamber as a cleaning gas.

摘要翻译： LPCVD装置设置有处理室和反应冷却装置。 反应冷却装置设置在处理室的外部，并且被配置为通过氢气和氟气的反应产生氟化氢气体并冷却氟化氢气体。 由反应冷却装置冷却的氟化氢气体作为清洗气体供给到处理室。

公开(公告)号：US08114755B2

公开(公告)日：2012-02-14

申请号：US12146143

申请日：2008-06-25

申请人： Ichiro Mizushima ,  Yoshio Ozawa ,  Takashi Nakao ,  Akihito Yamamoto ,  Takashi Suzuki ,  Masahiro Kiyotoshi ,  Minako Inukai ,  Kaori Umezawa ,  Hiroaki Yamada

发明人： Ichiro Mizushima ,  Yoshio Ozawa ,  Takashi Nakao ,  Akihito Yamamoto ,  Takashi Suzuki ,  Masahiro Kiyotoshi ,  Minako Inukai ,  Kaori Umezawa ,  Hiroaki Yamada

IPC分类号： H01L21/76

CPC分类号： H01L21/764

摘要： A method of manufacturing a semiconductor device includes removing a part of a semiconductor substrate to form a protruding portion and a recess portion in a surface area of the semiconductor substrate, forming a first epitaxial semiconductor layer in the recess portion, forming a second epitaxial semiconductor layer on the protruding portion and the first epitaxial semiconductor layer, removing a first part of the second epitaxial semiconductor layer with a second part of the second epitaxial semiconductor layer left to expose a part of the first epitaxial semiconductor layer, and etching the first epitaxial semiconductor layer from the exposed part of the first epitaxial semiconductor layer to form a cavity under the second part of the second epitaxial semiconductor layer.

摘要翻译： 一种制造半导体器件的方法包括：去除半导体衬底的一部分以在半导体衬底的表面区域中形成突出部分和凹陷部分，在凹部中形成第一外延半导体层，形成第二外延半导体层 在所述突出部分和所述第一外延半导体层上，用所述第二外延半导体层的第二部分去除所述第二外延半导体层的第一部分，以露出所述第一外延半导体层的一部分，并且蚀刻所述第一外延半导体层 从第一外延半导体层的暴露部分形成在第二外延半导体层的第二部分下面的空腔。

公开(公告)号：US20100171164A1

公开(公告)日：2010-07-08

申请号：US12659703

申请日：2010-03-17

申请人： Yoshio Ozawa ,  Ichiro Mizushima ,  Takashi Nakao ,  Akihito Yamamoto ,  Takashi Suzuki ,  Masahiro Kiyotoshi

发明人： Yoshio Ozawa ,  Ichiro Mizushima ,  Takashi Nakao ,  Akihito Yamamoto ,  Takashi Suzuki ,  Masahiro Kiyotoshi

IPC分类号： H01L27/115 ,  H01L29/788

CPC分类号： H01L27/115 ,  H01L21/84 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203

摘要： A nonvolatile semiconductor memory device including a semiconductor substrate having a semiconductor layer and an insulating material provided on a surface thereof, a surface of the insulating material is covered with the semiconductor layer, and a plurality of memory cells provided on the semiconductor layer, the memory cells includes a first dielectric film provided by covering the surface of the semiconductor layer, a plurality of charge storage layers provided above the insulating material and on the first dielectric film, a plurality of second dielectric films provided on the each charge storage layer, a plurality of conductive layers provided on the each second dielectric film, and an impurity diffusion layer formed partially or overall at least above the insulating material and inside the semiconductor layer and at least a portion of a bottom end thereof being provided by an upper surface of the insulating material.

摘要翻译： 一种非易失性半导体存储器件，包括具有半导体层和设置在其表面上的绝缘材料的半导体衬底，绝缘材料的表面被半导体层覆盖，并且设置在半导体层上的多个存储单元，存储器 电池包括通过覆盖半导体层的表面而提供的第一电介质膜，设置在绝缘材料上方和第一电介质膜上的多个电荷存储层，设置在每个电荷存储层上的多个第二电介质膜，多个 设置在每个第二电介质膜上的导电层，以及杂质扩散层，其部分或整体形成在绝缘材料的至少上方和半导体层的内部，并且其底端的至少一部分由绝缘体的上表面 材料。

公开(公告)号：US07651930B2

公开(公告)日：2010-01-26

申请号：US12146802

申请日：2008-06-26

申请人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

发明人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

IPC分类号： H01L21/20

CPC分类号： H01L27/115 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203 ,  H01L29/66825

摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.

摘要翻译： 一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在 开口部。 然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。 接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。 然后，在硅单晶层上形成存储单元阵列。