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公开(公告)号：CN101185991B
公开(公告)日：2012-01-11
申请号：CN200710188775.6
申请日：2007-11-20
Applicant: 株式会社日立制作所
IPC: B23K35/22 , B23K35/40 , H01L23/10 , H01L23/488 , H01L23/31
CPC classification number: H01L23/49582 , B23K20/02 , B23K20/04 , B23K35/0238 , B32B15/017 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/743 , H01L24/83 , H01L2224/291 , H01L2224/29111 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83455 , H01L2224/83801 , H01L2224/83805 , H01L2924/00014 , H01L2924/01006 , H01L2924/01009 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , Y10T428/12736 , Y10T428/31678 , H01L2924/01014 , H01L2924/00 , H01L2924/00012 , H01L2924/01083 , H01L2924/3512 , H01L2224/45099 , H01L2224/05599
Abstract: 本发明提供一种接合材料及其的制造方法以及半导体装置，在Al系合金层(102)的最表面设置了Zn系合金层(101)。该接合材料的上述Al系合金层(102)的Al含有率为99～100wt.％或上述Zn系合金层101的Zn含有率为90～100wt.％。通过使用该接合材料，在连接时能够抑制接合材料的表面的Al氧化膜的形成，能够得到用Zn-Al合金不能得到的良好的浸润性。另外，在接合后存留有Al系合金层的场合，由于柔软的Al作为应力缓冲材料发挥功能，所以能够得到很高的接合可靠性。
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公开(公告)号：CN1279612C
公开(公告)日：2006-10-11
申请号：CN03101963.3
申请日：2003-01-30
Applicant: 株式会社日立制作所
CPC classification number: H05K3/3452 , H01L2224/16225 , H05K3/3442 , H05K2201/0989 , H05K2201/09909 , H05K2201/10636 , H05K2201/10674 , H05K2203/0588 , Y02P70/611 , Y02P70/613
Abstract: 本发明的电路基板具有和芯片组件的电极相连的第1电极和第2电极、以及在对应该第1电极和该第2电极的位置形成开口部的第1绝缘层，该第1绝缘层的开口部的形状，至少在该第1电极的边缘部和该第2电极的边缘部当中，位于该芯片组件下方区域不被该第1绝缘层覆盖。
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公开(公告)号：CN102437130B
公开(公告)日：2016-08-03
申请号：CN201110375028.X
申请日：2007-11-20
Applicant: 株式会社日立制作所
CPC classification number: H01L23/49582 , B23K20/02 , B23K20/04 , B23K35/0238 , B32B15/017 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/743 , H01L24/83 , H01L2224/291 , H01L2224/29111 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83455 , H01L2224/83801 , H01L2224/83805 , H01L2924/00014 , H01L2924/01006 , H01L2924/01009 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , Y10T428/12736 , Y10T428/31678 , H01L2924/01014 , H01L2924/00 , H01L2924/00012 , H01L2924/01083 , H01L2924/3512 , H01L2224/45099 , H01L2224/05599
Abstract: 本发明提供一种半导体装置及其制造方法，该半导体装置具有第一部件、第二部件以及将所述第一部件和所述第二部件接合的连接材料。所述连接材料具有：Al系层、在所述Al系层和所述第一部件之间设置的第一Zn-Al系层以及在所述Al系层和所述第二部件之间设置的第二Zn-Al系层。通过使用该连接材料，在连接时能够抑制连接材料的表面的Al氧化膜的形成，能够得到用Zn-Al合金不能得到的良好的浸润性。另外，在接合后存留有Al系合金层的场合，由于柔软的Al作为应力缓冲材料发挥功能，所以能够得到很高的接合可靠性。
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公开(公告)号：CN100578778C
公开(公告)日：2010-01-06
申请号：CN200610095821.3
申请日：2001-12-19
Applicant: 株式会社日立制作所
CPC classification number: H01L24/01 , B23K3/063 , B23K2101/40 , H01L24/27 , H01L24/29 , H01L24/33 , H01L24/73 , H01L24/75 , H01L24/83 , H01L2224/0401 , H01L2224/04026 , H01L2224/16225 , H01L2224/29 , H01L2224/29076 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/292 , H01L2224/29211 , H01L2224/29311 , H01L2224/29347 , H01L2224/29499 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83101 , H01L2224/8319 , H01L2224/83801 , H01L2924/00011 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/13091 , H01L2924/15311 , H01L2924/15724 , H01L2924/15747 , H01L2924/15787 , H01L2924/1579 , H01L2924/16152 , H01L2924/166 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H05K3/3478 , H05K2201/0215 , H05K2203/0143 , H05K2203/0278 , H05K2203/0405 , H05K2203/0425 , Y10T428/12528 , Y10T428/12708 , Y10T428/12903 , H01L2924/00014 , H01L2924/05432 , H01L2924/00 , H01L2924/01007 , H01L2924/01031 , H01L2924/01022 , H01L2924/01026 , H01L2924/01049 , H01L2924/01083 , H01L2924/00012 , H01L2924/3512 , H01L2224/13111 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/29298
Abstract: 将含有作为金属颗粒的Cu等颗粒和作为焊锡颗粒的Sn颗粒的焊锡材料压延而形成的箔适用于温度分层焊接中的高温侧的锡焊，用这种锡焊方法获得的半导体器件、电子器件在机械特性等方面具有优良的可靠性。
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公开(公告)号：CN1482956A
公开(公告)日：2004-03-17
申请号：CN01821243.3
申请日：2001-12-19
Applicant: 株式会社日立制作所
CPC classification number: H01L24/01 , B23K3/063 , B23K2101/40 , H01L24/27 , H01L24/29 , H01L24/33 , H01L24/73 , H01L24/75 , H01L24/83 , H01L2224/0401 , H01L2224/04026 , H01L2224/16225 , H01L2224/29 , H01L2224/29076 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/292 , H01L2224/29211 , H01L2224/29311 , H01L2224/29347 , H01L2224/29499 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83101 , H01L2224/8319 , H01L2224/83801 , H01L2924/00011 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/13091 , H01L2924/15311 , H01L2924/15724 , H01L2924/15747 , H01L2924/15787 , H01L2924/1579 , H01L2924/16152 , H01L2924/166 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H05K3/3478 , H05K2201/0215 , H05K2203/0143 , H05K2203/0278 , H05K2203/0405 , H05K2203/0425 , Y10T428/12528 , Y10T428/12708 , Y10T428/12903 , H01L2924/00014 , H01L2924/05432 , H01L2924/00 , H01L2924/01007 , H01L2924/01031 , H01L2924/01022 , H01L2924/01026 , H01L2924/01049 , H01L2924/01083 , H01L2924/00012 , H01L2924/3512 , H01L2224/13111 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/29298
Abstract: 将含有作为金属颗粒的Cu等颗粒和作为焊锡颗粒的Sn颗粒的焊锡材料压延而形成的箔适用于温度分层焊接中的高温侧的锡焊，用这种锡焊方法获得的半导体器件、电子器件在机械特性等方面具有优良的可靠性。
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Patent Agency Ranking
公开(公告)号：CN102473650B
公开(公告)日：2014-09-24
申请号：CN201080027789.X
申请日：2010-08-30
Applicant: 株式会社日立制作所
CPC classification number: C22C18/04 , B22F2998/00 , B23K1/0016 , B23K2101/42 , B32B15/017 , C22C21/00 , C22C21/06 , H01L23/04 , H01L23/3107 , H01L23/49582 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/29109 , H01L2224/29111 , H01L2224/29118 , H01L2224/29147 , H01L2224/29211 , H01L2224/2929 , H01L2224/29299 , H01L2224/29347 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2924/00013 , H01L2924/00014 , H01L2924/01012 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/10253 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/351 , Y10T29/49826 , Y10T428/12736 , B22F7/062 , H01L2924/0105 , H01L2924/00012 , H01L2924/01013 , H01L2924/0103 , H01L2924/01032 , H01L2924/01014 , H01L2924/01083 , H01L2924/01031 , H01L2924/01082 , H01L2924/01049 , H01L2924/00 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/05599
Abstract: 本发明提供接合材料、半导体装置及其制造方法，当采用现有的Zn/Al/Zn金属包层材料进行接合时，由于接合部的热阻至少与现有的高铅焊料相当，接合部的厚度必需为现有的焊料的2倍(约100μm)以下。另外，为了充分呈现Al层的应力缓冲能力，Al层的厚度必需尽量厚。为了得到充分的接合性，接合时必需用约2g/mm2以上的荷重进行加压，批量生产成本显著上升。本发明的半导体装置，其特征在于，包括：半导体元件；框架；和将上述半导体元件与上述框架接合的接合部；上述接合部含Zn-Al合金，在上述接合部与上述半导体元件的界面及上述接合部与上述框架的界面，Al氧化物膜的面积相对全部界面面积之比为0％以上5％以下。
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公开(公告)号：CN102437130A
公开(公告)日：2012-05-02
申请号：CN201110375028.X
申请日：2007-11-20
Applicant: 株式会社日立制作所
CPC classification number: H01L23/49582 , B23K20/02 , B23K20/04 , B23K35/0238 , B32B15/017 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/743 , H01L24/83 , H01L2224/291 , H01L2224/29111 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83455 , H01L2224/83801 , H01L2224/83805 , H01L2924/00014 , H01L2924/01006 , H01L2924/01009 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , Y10T428/12736 , Y10T428/31678 , H01L2924/01014 , H01L2924/00 , H01L2924/00012 , H01L2924/01083 , H01L2924/3512 , H01L2224/45099 , H01L2224/05599
Abstract: 本发明提供一种半导体装置及其制造方法，该半导体装置具有第一部件、第二部件以及将所述第一部件和所述第二部件接合的连接材料。所述连接材料具有：Al系层、在所述Al系层和所述第一部件之间设置的第一Zn-Al系层以及在所述Al系层和所述第二部件之间设置的第二Zn-Al系层。通过使用该连接材料，在连接时能够抑制连接材料的表面的Al氧化膜的形成，能够得到用Zn-Al合金不能得到的良好的浸润性。另外，在接合后存留有Al系合金层的场合，由于柔软的Al作为应力缓冲材料发挥功能，所以能够得到很高的接合可靠性。
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公开(公告)号：CN1873971A
公开(公告)日：2006-12-06
申请号：CN200610095821.3
申请日：2001-12-19
Applicant: 株式会社日立制作所
CPC classification number: H01L24/01 , B23K3/063 , B23K2101/40 , H01L24/27 , H01L24/29 , H01L24/33 , H01L24/73 , H01L24/75 , H01L24/83 , H01L2224/0401 , H01L2224/04026 , H01L2224/16225 , H01L2224/29 , H01L2224/29076 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/292 , H01L2224/29211 , H01L2224/29311 , H01L2224/29347 , H01L2224/29499 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83101 , H01L2224/8319 , H01L2224/83801 , H01L2924/00011 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/13091 , H01L2924/15311 , H01L2924/15724 , H01L2924/15747 , H01L2924/15787 , H01L2924/1579 , H01L2924/16152 , H01L2924/166 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H05K3/3478 , H05K2201/0215 , H05K2203/0143 , H05K2203/0278 , H05K2203/0405 , H05K2203/0425 , Y10T428/12528 , Y10T428/12708 , Y10T428/12903 , H01L2924/00014 , H01L2924/05432 , H01L2924/00 , H01L2924/01007 , H01L2924/01031 , H01L2924/01022 , H01L2924/01026 , H01L2924/01049 , H01L2924/01083 , H01L2924/00012 , H01L2924/3512 , H01L2224/13111 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/29298
Abstract: 将含有作为金属颗粒的Cu等颗粒和作为焊锡颗粒的Sn颗粒的焊锡材料压延而形成的箔适用于温度分层焊接中的高温侧的锡焊，用这种锡焊方法获得的半导体器件、电子器件在机械特性等方面具有优良的可靠性。
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公开(公告)号：CN1449029A
公开(公告)日：2003-10-15
申请号：CN03101963.3
申请日：2003-01-30
Applicant: 株式会社日立制作所
CPC classification number: H05K3/3452 , H01L2224/16225 , H05K3/3442 , H05K2201/0989 , H05K2201/09909 , H05K2201/10636 , H05K2201/10674 , H05K2203/0588 , Y02P70/611 , Y02P70/613
Abstract: 本发明是关于电路基板、电子机器、以及前述电路基板和电子机器的制造方法。本发明的电路基板具有和芯片组件的电极相连的第1电极和第2电极、以及在对应该第1电极和该第2电极的位置形成开口部的第1绝缘层，该第1绝缘层的开口部的形状，至少在该第1电极的边缘部和该第2电极的边缘部当中，位于该芯片组件下方区域不被该第1绝缘层覆盖。
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公开(公告)号：CN102473650A
公开(公告)日：2012-05-23
申请号：CN201080027789.X
申请日：2010-08-30
Applicant: 株式会社日立制作所
CPC classification number: C22C18/04 , B22F2998/00 , B23K1/0016 , B23K2101/42 , B32B15/017 , C22C21/00 , C22C21/06 , H01L23/04 , H01L23/3107 , H01L23/49582 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/29109 , H01L2224/29111 , H01L2224/29118 , H01L2224/29147 , H01L2224/29211 , H01L2224/2929 , H01L2224/29299 , H01L2224/29347 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2924/00013 , H01L2924/00014 , H01L2924/01012 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/10253 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/351 , Y10T29/49826 , Y10T428/12736 , B22F7/062 , H01L2924/0105 , H01L2924/00012 , H01L2924/01013 , H01L2924/0103 , H01L2924/01032 , H01L2924/01014 , H01L2924/01083 , H01L2924/01031 , H01L2924/01082 , H01L2924/01049 , H01L2924/00 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/05599
Abstract: 本发明提供接合材料、半导体装置及其制造方法，当采用现有的Zn/Al/Zn金属包层材料进行接合时，由于接合部的热阻至少与现有的高铅焊料相当，接合部的厚度必需为现有的焊料的2倍(约100μm)以下。另外，为了充分呈现Al层的应力缓冲能力，Al层的厚度必需尽量厚。为了得到充分的接合性，接合时必需用约2g/mm2以上的荷重进行加压，批量生产成本显著上升。本发明的半导体装置，其特征在于，包括：半导体元件；框架；和将上述半导体元件与上述框架接合的接合部；上述接合部含Zn-Al合金，在上述接合部与上述半导体元件的界面及上述接合部与上述框架的界面，Al氧化物膜的面积相对全部界面面积之比为0％以上5％以下。
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