公开(公告)号：US5062771A

公开(公告)日：1991-11-05

申请号：US325910

申请日：1989-03-20

Applicant: Akihiko Satou ,  Tadao Kusaka ,  Shigeo Tomiyama ,  Kouzi Aoki ,  Ichiro Gyobu ,  Kimio Muramatsu ,  Hiroaki Sakamoto ,  Shinjiroo Ueda ,  Masahiro Mase ,  Takashi Nagaoka

Inventor： Akihiko Satou ,  Tadao Kusaka ,  Shigeo Tomiyama ,  Kouzi Aoki ,  Ichiro Gyobu ,  Kimio Muramatsu ,  Hiroaki Sakamoto ,  Shinjiroo Ueda ,  Masahiro Mase ,  Takashi Nagaoka

IPC: B01J3/00 ,  C23C16/44 ,  F04D19/04

CPC classification number: B01J3/006 ,  C23C16/4412 ,  F04D17/168 ,  F04D19/046 ,  F04D23/008 ,  Y10S148/022 ,  Y10S148/03 ,  Y10S148/169 ,  Y10S438/909

Abstract: This invention concerns a production method and a processing apparatus for semiconductor devices, as well as an evacuating apparatus used for the processing apparatus. According to this invention, since the evacuation system of pressure-reduction processing apparatus for conducting various wafer processings during production steps of semiconductor devices is constituted only with oil-free vacuum pump, deleterious oil contaminations or carbonation products of oils produced from oils upon heating are not present in the pressure-reducing processing chamber as compared with conventional pressure-reducing processing apparatus using a vacuum oil pump as an evacuation pump and the production method of semiconductor devices using such apparatus. Accordingly, highly clean evacuated condition can be attained and, in addition, semiconductor devices at high reliability and with no degradation in the electric characteristics can be obtained by using the pressure-reducing processing apparatus having such a highly clean processing chamber.

公开(公告)号：US4983499A

公开(公告)日：1991-01-08

申请号：US469682

申请日：1990-01-25

Applicant: Makoto Suzuki ,  Shoji Yamada ,  Kazunari Taki ,  Akihiro Suzuki

Inventor： Makoto Suzuki ,  Shoji Yamada ,  Kazunari Taki ,  Akihiro Suzuki

IPC: G02B6/122 ,  G02B6/124

CPC classification number: G02B6/1245 ,  Y10S148/03

Abstract: A method of forming on a substrate a waveguide lens having a predetermined distribution of refractive index, for converging or diverging light rays which propagate through a two-dimensional waveguide formed on a surface of the substrate. The method includes a step of forming a film of a diffusion metal having a constant thickness, a step of removing local portions of said film, by using a mask so that a density of the removed local portions of the film per unit area is continuously varied, and a step of effecting thermal diffusion of the remainder of the film into the substrate. Alternatively, the method includes a step of forming a mask having a multiplicity of separate openings whose density per unit area is continuously varied, a step of exposing a multiplicity of separate exposed areas of the substrate aligned with the separate openings to a material which serves to change a refractive index of the substrate, and a step of moving the material from the surface of the substrate into its interior.

公开(公告)号：US4066484A

公开(公告)日：1978-01-03

申请号：US616404

申请日：1975-09-24

Applicant: Joseph Moyson

Inventor： Joseph Moyson

IPC: H01L21/22 ,  H01L21/332 ,  H01L29/167

CPC classification number: H01L29/66363 ,  H01L21/221 ,  H01L29/167 ,  H01L29/66386 ,  Y10S148/03

Abstract: Disclosed is a thyristor and a method for the manufacture thereof. An auxiliary dopant, such as gold, is diffused into the cathode emitter region and the area immediately therearound. The auxiliary dopant is selected from among those known to stimulate charge carrier recombination. Consequently charge carrier recombination in the vicinity of the cathode emitter is enhanced and rapid turnoff of the device is promoted. Both SCR and triac embodiments are disclosed.

公开(公告)号：US3884733A

公开(公告)日：1975-05-20

申请号：US44329074

申请日：1974-02-19

Applicant: TEXAS INSTRUMENTS INC

Inventor： BEAN KENNETH ELWOOD

IPC: H01L21/20 ,  H01L21/762 ,  H01L23/535 ,  H01L27/00 ,  H01L7/36 ,  H01L27/04

CPC classification number: H01L23/535 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/76294 ,  H01L27/00 ,  H01L2924/0002 ,  Y10S148/026 ,  Y10S148/03 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/115 ,  Y10S438/928 ,  H01L2924/00

Abstract: A method of epitaxially depositing onto a semiconductor substrate by planarizing the deposition surface of the substrate substantially parallel to a predetermined crystallographic plane, forming a deposition mask which exposes a predetermined site on the surface of the substrate, and epitaxially depositing semiconductor material in a preferred growth direction at the exposed site to produce a monocrystalline structure. A plurality of sites may be exposed through the deposition mask to permit formation of a plurality of discrete monocrystalline structures having predetermined spacing. Layers of different conductivity types can be formed in the structures by selective doping during deposition. Monocrystalline structures formed by the above method may be coated with a dielectric material and further processed to produce semiconductor devices for use in integrated circuits. If the monocrystalline structures are suitably arrayed and of a different conductivity type than the substrate, thus yielding semiconductor diodes, they can be utilized as a target in a vidicon tube.

公开(公告)号：US3826721A

公开(公告)日：1974-07-30

申请号：US29992172

申请日：1972-10-24

Applicant: GEN ELECTRIC

Inventor： HALL R

IPC: C25D3/66 ,  H01L21/22 ,  H01L31/00 ,  C23B5/00

CPC classification number: H01L21/222 ,  C25D3/66 ,  H01L31/00 ,  Y10S148/03

Abstract: HEAVILY LITHIUM-DOPED N+ SURFAC-ADJACENT REGIONS ARE FORMED IN HIGH-PURITY GERMANIUM BODIES BY ELECTRODEPOSITION THEREOF FROM A BATH OF FUSED LITHIUM SALT AT A TEMPERATURE AT WHICH THE SOLUBILITY OF COPPER IN GERMANIUM IS NEGLIGIBLE.

公开(公告)号：US5702959A

公开(公告)日：1997-12-30

申请号：US455945

申请日：1995-05-31

Applicant: Louis N. Hutter ,  Jeffrey P. Smith

Inventor： Louis N. Hutter ,  Jeffrey P. Smith

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/761 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732 ,  H01L21/265

CPC classification number: H01L21/761 ,  H01L27/0623 ,  H01L29/7322 ,  Y10S148/03 ,  Y10S148/039 ,  Y10S148/109

Abstract: A process for making a vertical PNP transistor and a transistor made by the process includes providing a highly doped semiconductor substrate (10) of P conductivity type. A first lightly doped P- layer (12) is epitaxially grown on the substrate (10). An N+ type buried layer impurity (18) is introduced into a surface region of the first lightly doped layer (12) that will underlie and define an island in which the vertical transistor will be constructed. A second lightly doped P- layer (16) is epitaxially grown on the first lightly doped layer (12) and the buried layer impurity (18). An N+ type isolation impurity is diffused into the second layer to form wells to laterally enclose an island (22) of the second layer (16) above the buried layer impurity (18). An N type base impurity (28) is diffused into the island (22) region of the second layer (16), and a P type emitter impurity (30) is diffused into the base region (28). A collector resistivity adjusting impurity (25) may optionally be diffused into the second layer (16) to reduce the collector resistance of the PNP transistor that is formed. Various steps in the construction of the vertical PNP transistor, such as diffusing the isolation impurity (18), diffusing the base impurity (28), and diffusing the emitter impurity (30), may be performed simultaneously with corresponding steps of a BiCMOS process.

Abstract translation: 用于制造垂直PNP晶体管和由该工艺制造的晶体管的工艺包括提供P导电型的高掺杂半导体衬底（10）。 在衬底（10）上外延生长第一轻掺杂P层（12）。 将N +型掩埋层杂质（18）引入到第一轻掺杂层（12）的表面区域中，该第一轻掺杂层将构成将构成垂直晶体管的基底并形成一个岛。 在第一轻掺杂层（12）和掩埋层杂质（18）上外延生长第二轻掺杂P层（16）。 N +型隔离杂质扩散到第二层中以形成阱以横向封闭第二层（16）上的掩埋层杂质（18）上方的岛（22）。 N型基极杂质（28）扩散到第二层（16）的岛（22）区域中，P型发射极杂质（30）扩散到基极区（28）中。 集电极电阻率调整杂质（25）可以任选地扩散到第二层（16）中，以减小形成的PNP晶体管的集电极电阻。 可以与BiCMOS工艺的相应步骤同时进行垂直PNP晶体管的构造中的各种步骤，例如扩散隔离杂质（18），扩散基极杂质（28）和扩散发射极杂质（30）。

公开(公告)号：US3853634A

公开(公告)日：1974-12-10

申请号：US36213273

申请日：1973-05-21

Applicant: FAIRCHILD CAMERA INSTR CO

Inventor： AMELIO G ,  KIM C ,  SALSBURY P

IPC: H01L29/762 ,  H01L21/00 ,  H01L21/339 ,  H01L29/768 ,  H01L7/54

CPC classification number: H01L29/768 ,  H01L21/00 ,  Y10S148/03

Abstract: The asymmetrical implanted regions required in a single-level electrode two-phase charge coupled device structure are formed by a process which accurately aligns one edge of each ion-implanted region with an edge of a corresponding conductive electrode overlying the ion-implanted region.

Abstract translation: 通过将每个离子注入区域的一个边缘与覆盖离子注入区域的相应导电电极的边缘精确对准的方法形成单电极两相电荷耦合器件结构中所需的不对称注入区域。

公开(公告)号：US3812579A

公开(公告)日：1974-05-28

申请号：US18623871

申请日：1971-10-04

Applicant: METROLAB INC ,  SUBSIDIARY OF CUBIC CORP

Inventor： ROES J

IPC: G11B5/004 ,  G11B5/48 ,  G11B5/49 ,  G11B5/42

CPC classification number: G11B5/004 ,  G11B5/48 ,  G11B5/49 ,  Y10S148/03 ,  Y10T29/4903

Abstract: The memory apparatus incorporates a drum, mounted for rotation, and a series of hard mounted heads, spaced from the drum magnetic recording medium surface. The mounting structure includes spaced parallel aligning bars, utilized to precisely align the magnetic heads prior to finally fixing them to the structure, and resilient plastic wedges utilized to maintain a bias against the aligning bars, to compensate for the stresses induced in the assembly process. The precise spacing from the magnetic medium is accomplished by placing a spacing film over the drum, which film is removed after final assembly, leaving the proper head-tomedium gap. The final configuration is maintained by the use of epoxy adhesive to secure the heads to the aligning bars and retaining bars. The frame structure and head utilize the same metal alloy to maintain the head-to-medium gap during temperature variations. The resulting apparatus may be utilized in a voice response system for producing computer ordered, human voice response, to various commands. In this application the drum is rotated at a rate of one revolution per second and the head gap, head-to-medium spacing, and medium thickness, controlled to produce a relatively flat response characteristics over the frequencies of importance and thereby enable the use of relatively simple amplifiers with linear response characteristics.

Abstract translation: 存储装置包括一个滚筒，用于旋转安装，以及一系列与滚筒磁记录介质表面间隔开的硬安装头。 安装结构包括间隔开的平行对准杆，用于在最终将它们固定到结构体之间精确对准磁头，以及用于保持抵靠对准杆的偏置的弹性塑料楔，以补偿在组装过程中引起的应力。 与磁性介质的精确间隔是通过在滚筒上放置间隔膜来实现的，该膜在最终组装之后被去除，留下适当的中间到中间的间隙。 通过使用环氧树脂粘合剂来保持最终配置以将头部固定到对准杆和保持杆。 框架结构和头部在温度变化期间利用相同的金属合金来保持头对中间的间隙。 所产生的装置可以用于语音响应系统中，用于产生计算机有序的人类语音响应到各种命令。 在这种应用中，鼓以每秒一转的速度旋转，并且头部间隙，头 - 中间间隔和中等厚度被控制以在重要的频率上产生相对平坦的响应特性，从而能够使用 具有线性响应特性的相对简单的放大器。

公开(公告)号：US3812519A

公开(公告)日：1974-05-21

申请号：US26399472

申请日：1972-06-19

Applicant: TOKYO SHIBAURA ELECTRIC CO

Inventor： KATO T ,  WATANABE M ,  NAKAMURA M ,  YONEZAWA T ,  AKATSUKA M

IPC: H01L21/00 ,  H01L21/225 ,  H01L29/167 ,  H01L3/14

CPC classification number: H01L29/167 ,  H01L21/00 ,  H01L21/2255 ,  Y10S148/03 ,  Y10S148/04 ,  Y10S148/041 ,  Y10S148/097 ,  Y10S257/919 ,  Y10S438/919

Abstract: A silicon semiconductor device double doped with phosphorus and arsenic or boron and arsenic, the arsenic being present in an amount 3 to 40 percent of the other dopant and preventing lattice collapse with heavy doping concentrations.

公开(公告)号：US3705059A

公开(公告)日：1972-12-05

申请号：US3705059D

申请日：1971-02-25

Applicant: ZENITH RADIO CORP

Inventor： KUN ZOLTAN K

IPC: H01L21/385 ,  H01L33/00 ,  H01L33/28 ,  H01L7/36 ,  C23C13/00 ,  H01L5/00

CPC classification number: H01L33/285 ,  H01L21/385 ,  H01L33/00 ,  H01L33/0066 ,  Y10S148/005 ,  Y10S148/03 ,  Y10S148/064 ,  Y10S148/169

Abstract: TO PRODUCE A P-CONDUCTIVITY TYPE WIDE BAND GAP SEMICONDUCTOR MATERIAL, A III-V COMPOUND SEMICONDUCTOR LAYER IS FIRST VACUUM EVAPORATED ONTO AND THEN DIFFUSED INTO A CRYSTALLINE II-VI COMPOUND SEMICONDUCTOR SUBSTRATE, SPECIFICALLY A ZINC CHALCOGENIDE. THE RESULTING HYBRID CRYSTALLINE MATERIAL IS DOPED BY SIMULTANEOUS OR SEQUENTIAL INFUSION OF ZINC ATOMS IN SUBSTITUTION FOR ATOMS OF THE GROUP III ELEMENT. THE PROCESS MAY BE USED FOR THE DIRECT PRODUCTION OF P-N JUNCTIONS IN ZINC CHALOGENIDES BY EMPLOYING AN N-TYPE RATHER THAN AN INTRINSIC SUBSTRATE.