公开(公告)号：US3858238A

公开(公告)日：1974-12-31

申请号：US40092873

申请日：1973-09-26

Applicant: TOKYO SHIBAURA ELECTRIC CO

Inventor： NAKAMURA M ,  YONEZAWA T ,  AKATSUKA M ,  KATO T ,  WATANABE M

IPC: H01L21/225 ,  H01L29/04 ,  H01L29/167 ,  H01L3/14

CPC classification number: H01L21/2255 ,  H01L29/045 ,  H01L29/167 ,  Y10S148/04 ,  Y10S148/041 ,  Y10S148/097 ,  Y10S257/919

Abstract: A semiconductor device comprising a high impurity concentration region, the impurity consisting of arsenic and at least one impurity other than arsenic. The number of atoms of the arsenic is smaller than that of the other impurity.

Abstract translation: 一种半导体器件，包括高杂质浓度区域，由砷和砷以外的至少一种杂质构成的杂质。 砷的原子数小于其他杂质的原子数。

公开(公告)号：US3834953A

公开(公告)日：1974-09-10

申请号：US36313273

申请日：1973-05-23

Applicant: TOKYO SHIBAURA ELECTRIC CO

Inventor： KATO T ,  WATANABE M ,  NAKAMURA M ,  YONEZAWA T ,  AKATSUKA M

IPC: H01L21/00 ,  H01L21/225 ,  H01L29/167 ,  H01L7/44

CPC classification number: H01L29/167 ,  H01L21/00 ,  H01L21/2255 ,  Y10S148/04 ,  Y10S148/097 ,  Y10S148/151 ,  Y10S148/167

Abstract: A SEMICONDUCTOR DEVICE COMPRISING A HIGH IMPURITY CONCENTRATION REGION, THE IMPURITY CONSISTING OF ARSENIC AND AT LEAST ONE IMPURITY OTHER THAN ARSENIC. THE NUMBER OF ATOMS OF THE ARSENIC IS SMALLER THAN THAT OF THE OTHER IMPURITY.

公开(公告)号：US3812519A

公开(公告)日：1974-05-21

申请号：US26399472

申请日：1972-06-19

Applicant: TOKYO SHIBAURA ELECTRIC CO

Inventor： KATO T ,  WATANABE M ,  NAKAMURA M ,  YONEZAWA T ,  AKATSUKA M

IPC: H01L21/00 ,  H01L21/225 ,  H01L29/167 ,  H01L3/14

CPC classification number: H01L29/167 ,  H01L21/00 ,  H01L21/2255 ,  Y10S148/03 ,  Y10S148/04 ,  Y10S148/041 ,  Y10S148/097 ,  Y10S257/919 ,  Y10S438/919

Abstract: A silicon semiconductor device double doped with phosphorus and arsenic or boron and arsenic, the arsenic being present in an amount 3 to 40 percent of the other dopant and preventing lattice collapse with heavy doping concentrations.