Invention Grant
- Patent Title: Semiconductor devices containing as impurities as and p or b and the method of manufacturing the same
- Patent Title (中): 作为和P或B的含义的半导体器件及其制造方法
-
Application No.: US36313273Application Date: 1973-05-23
-
Publication No.: US3834953APublication Date: 1974-09-10
- Inventor: KATO T , WATANABE M , NAKAMURA M , YONEZAWA T , AKATSUKA M
- Applicant: TOKYO SHIBAURA ELECTRIC CO
- Assignee: Tokyo Shibaura Electric Co
- Current Assignee: Tokyo Shibaura Electric Co
- Priority: US36313273 1973-05-23; JP1037670 1970-02-07; JP1710370 1970-03-02; JP2082670 1970-03-13; JP2562770 1970-03-28; US7881970 1970-10-07
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/225 ; H01L29/167 ; H01L7/44
Abstract:
A SEMICONDUCTOR DEVICE COMPRISING A HIGH IMPURITY CONCENTRATION REGION, THE IMPURITY CONSISTING OF ARSENIC AND AT LEAST ONE IMPURITY OTHER THAN ARSENIC. THE NUMBER OF ATOMS OF THE ARSENIC IS SMALLER THAN THAT OF THE OTHER IMPURITY.
Information query
IPC分类:
