公开(公告)号：US20240039504A1

公开(公告)日：2024-02-01

申请号：US18378254

申请日：2023-10-10

申请人： Northeastern University

发明人： Cristian CASSELLA ,  Xuanyi ZHAO

IPC分类号： H03H9/02 ,  H03H3/04 ,  H03H9/17 ,  H03H9/56 ,  H03H9/13

CPC分类号： H03H9/02031 ,  H03H3/04 ,  H03H9/176 ,  H03H9/568 ,  H03H9/13 ,  H03H2003/0435

摘要： A microelectromechanical resonator device is provided having two-dimensional resonant rods. The resonator device has a piezoelectric layer formed with a plurality of alternating rods and trenches. A bottom electrode is in contact with a bottom surface of the piezoelectric layer. A top electrode metal grating of conductive strips is aligned in contact with corresponding rods of the piezoelectric layer.

公开(公告)号：US11784623B2

公开(公告)日：2023-10-10

申请号：US17097289

申请日：2020-11-13

申请人： Northeastern University

发明人： Cristian Cassella ,  Xuanyi Zhao

IPC分类号： H03H9/02 ,  H03H3/04 ,  H03H9/17 ,  H03H9/56 ,  H03H9/13

CPC分类号： H03H9/02031 ,  H03H3/04 ,  H03H9/13 ,  H03H9/176 ,  H03H9/568 ,  H03H2003/0435

摘要： A microelectromechanical resonator device is provided having two-dimensional resonant rods. The resonator device has a piezoelectric layer formed with a plurality of alternating rods and trenches. A bottom electrode is in contact with a bottom surface of the piezoelectric layer. A top electrode metal grating of conductive strips is aligned in contact with corresponding rods of the piezoelectric layer.

公开(公告)号：US20180212584A1

公开(公告)日：2018-07-26

申请号：US15923539

申请日：2018-03-16

申请人： Murata Manufacturing Co., Ltd.

发明人： Hiroyuki Yamamoto ,  Hiroaki Kaida ,  Masaru Asai

IPC分类号： H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/13 ,  H03H9/19 ,  H03H3/04

CPC分类号： H03H9/02023 ,  H03B5/36 ,  H03B2200/0022 ,  H03H3/02 ,  H03H3/04 ,  H03H9/02157 ,  H03H9/0509 ,  H03H9/0519 ,  H03H9/0552 ,  H03H9/1021 ,  H03H9/13 ,  H03H9/19 ,  H03H2003/022 ,  H03H2003/0435

摘要： A rectangular quartz crystal blank having long sides substantially parallel to a Z′ axis of the quartz crystal blank, and short sides substantially parallel to an X axis of the quartz crystal blank. The quartz crystal blank includes a center region, a second region and a third region that are adjacent to the center region along a long-side direction, and a fourth region and a fifth region that are adjacent to the first region along a short-side direction. A thickness of the second region and a thickness of the third region are smaller than a thickness of the first region, and/or a thickness of the fourth region and a thickness of the fifth region are smaller than a thickness of the first region, and 20.78≤W/T≤22.10, where W is a length of a short side and T is a thickness.

公开(公告)号：US20180054179A1

公开(公告)日：2018-02-22

申请号：US15679467

申请日：2017-08-17

申请人： Qorvo US, Inc.

发明人： Kevin J. Gamble ,  Benjamin P. Abbott ,  Alan S. Chen ,  Kurt G. Steiner

IPC分类号： H03H9/02 ,  H03H9/145 ,  H03H9/58 ,  H03H3/08

CPC分类号： H03H9/02228 ,  H01L2224/05001 ,  H03H3/08 ,  H03H3/10 ,  H03H9/02015 ,  H03H9/02149 ,  H03H9/02559 ,  H03H9/14538 ,  H03H9/1457 ,  H03H9/583 ,  H03H2003/0435

摘要： An acoustic wave device includes a piezoelectric layer, an interdigital transducer, and a slow wave propagation overlay over a portion of the interdigital transducer. By providing electrode fingers of the interdigital transducer such that a portion of the width thereof is dependent on an electrode period, a desirable wave mode may be maintained in the acoustic wave device. Further, by varying a width of the slow wave propagation overlay based on the electrode period, the desirable wave mode may be further maintained.

公开(公告)号：US20110064614A1

公开(公告)日：2011-03-17

申请号：US12736805

申请日：2009-03-02

申请人： Shigenori Watanabe ,  Takeru Mutoh ,  Mitsuaki Koyama

发明人： Shigenori Watanabe ,  Takeru Mutoh ,  Mitsuaki Koyama

IPC分类号： G01N30/96 ,  H03H9/205

CPC分类号： G01N5/02 ,  G01G3/13 ,  G01G3/16 ,  G01G3/18 ,  G01N1/405 ,  G01N33/0004 ,  H03B5/323 ,  H03H3/04 ,  H03H9/02157 ,  H03H9/132 ,  H03H9/56 ,  H03H2003/0428 ,  H03H2003/0435 ,  H03H2003/0471

摘要： Provided is a piezoelectric resonator having high frequency stability and a sensing sensor using the piezoelectric resonator. A piezoelectric resonator has a first oscillation area which is provided in a piezoelectric piece and from which a first oscillation frequency is taken out. A second oscillation area which is provided in an area different from the first oscillation area via an elastic boundary area and from which a second oscillation frequency is taken out. Excitation electrodes are provided on one surface side and another surface side of the oscillation areas across the piezoelectric piece, and a frequency difference between the first oscillation frequency and the second oscillation frequency is not less than 0.2% nor greater than 2.2% of these oscillation frequencies.

摘要翻译： 提供了一种具有高频稳定性的压电谐振器和使用压电谐振器的感测传感器。 压电谐振器具有设置在压电片中的第一振荡区域，并且从其中取出第一振荡频率。 第二振荡区域，其经由弹性边界区域设置在与第一振荡区域不同的区域中，并且从其中取出第二振荡频率。 激励电极设置在压电片的振荡区域的一个表面侧和另一个表面侧，并且第一振荡频率与第二振荡频率之间的频率差不小于这些振荡频率的0.2％或不大于2.2％ 。

公开(公告)号：US07741930B2

公开(公告)日：2010-06-22

申请号：US11509056

申请日：2006-08-24

申请人： Shogo Inoue ,  Tokihiro Nishihara ,  Takashi Matsuda ,  Masanori Ueda

发明人： Shogo Inoue ,  Tokihiro Nishihara ,  Takashi Matsuda ,  Masanori Ueda

IPC分类号： H01L41/00

CPC分类号： H03H9/706 ,  H03H9/0042 ,  H03H9/02157 ,  H03H9/0576 ,  H03H9/14517 ,  H03H9/14526 ,  H03H9/14547 ,  H03H9/14552 ,  H03H9/14594 ,  H03H9/174 ,  H03H9/6483 ,  H03H9/72 ,  H03H9/725 ,  H03H2003/0428 ,  H03H2003/0435

摘要： There is provided a filter including a first resonator, a second resonator in which an excitation efficiency is reduced more than the first resonator, and an inductor connected in parallel with the second resonator.

摘要翻译： 提供了一种滤波器，包括第一谐振器，其中激励效率比第一谐振器更多地减小的第二谐振器，以及与第二谐振器并联连接的电感器。

公开(公告)号：US20050258146A1

公开(公告)日：2005-11-24

申请号：US11126983

申请日：2005-05-11

申请人： Kazushige Umetsu

发明人： Kazushige Umetsu

IPC分类号： B23K26/00 ,  H02N2/00 ,  H03H3/02 ,  H03H9/19

CPC分类号： H03H9/19 ,  H03H3/02 ,  H03H2003/0435 ,  Y10T29/42

摘要： By applying a laser beam that is absorbed into a quartz crystal to an upper right end of a crystal chip, the height of the crystal chip is altered step by step to form a first step, a second step, a third step, and a fourth step, respectively. As such, control of the shape of a quartz crystal resonator is easy even if the quartz crystal resonator is miniaturized, the shape and the performance of a processed quartz crystal resonator are satisfactory, quartz crystal resonators of various shapes can be formed, a quartz crystal resonator can be formed at low cost with a small number of man-hours, a load in driving a quartz crystal resonator is small, and versatile equipment and tools can be used.

摘要翻译： 通过将被吸收到石英晶体的激光束施加到晶体芯片的右上端，晶片的高度逐步改变以形成第一步骤，第二步骤，第三步骤和第四步骤 分别。 因此，即使石英晶体谐振器小型化，石英晶体谐振器的形状和性能也令人满意，石英晶体谐振器的形状的控制也容易，可以形成各种形状的石英晶体谐振器，石英晶体 谐振器可以以少量的工时成本低成本，驱动石英晶体谐振器的负载小，可以使用通用的设备和工具。

公开(公告)号：US06903629B1

公开(公告)日：2005-06-07

申请号：US10669282

申请日：2003-09-24

申请人： Arthur Ballato ,  John R. Vig ,  Yook-Kong Yong

发明人： Arthur Ballato ,  John R. Vig ,  Yook-Kong Yong

IPC分类号： H03H9/17 ,  H03H9/56 ,  H03H9/205 ,  H03H9/54

CPC分类号： H03H9/177 ,  H03H9/132 ,  H03H9/56 ,  H03H2003/0428 ,  H03H2003/0435

摘要： Double-sided, single-sided and ring electrode mesa resonators are provided that operate in the difficult 3 GHZ frequency with an electrode-free resonator area that serves as an energy-trapping area. The double-sided electrode-free resonator device is a double-sided mesa resonator plate, top and bottom wells, a mesa, and top and bottom electrodes deposited in such a way that the electrodes cover the plate surface and surround the mesa, which allows the mesa to protrude above the electrodes and provide an electrode-free resonator area. The top and bottom electrodes, which are acoustically coupled and controlled by acoustic gaps, create an electro-magnetic field and an excitation voltage within a vibrating area of the resonator plate generates an acoustic energy which is trapped within the resonator area and confined to the resonator area to minimize a leakage of the acoustic energy and provide a high Q factor at 3 GHz. The resonator has a resonator frequency determined by a resonator thickness dimension, t3, influences the resonator area's ability to function as an active element trapping the acoustic energy. The inventors herein have observed a strong relationship between decreased resonator thickness and motional impedance. Double-sided and single-sided filter devices based on the same principles are also provided.

摘要翻译： 提供双面，单面和环形电极台面共振器，其工作在困难的3 GHZ频率，无电极谐振器区域用作能量捕获区域。 双面无电极谐振器装置是双面台面共振器板，顶部和底部井，台面以及顶部和底部电极，以使得电极覆盖板表面并且围绕台面的方式沉积，这允许 台面突出在电极上方，并提供无电极的谐振器区域。 通过声学间隙声学耦合和控制的顶部和底部电极产生电磁场，并且谐振器板的振动区域内的激发电压产生被吸收在谐振器区域内并限于谐振器的声能 以最小化声能的泄漏并在3GHz提供高Q因子。 谐振器具有由谐振器厚度尺寸t 3确定的谐振器频率，影响谐振器区域作为捕获声能的有源元件的功能。 发明人在此观察到减小的谐振器厚度和运动阻抗之间的强关系。 还提供了基于相同原理的双面和单面过滤装置。

公开(公告)号：US20040239450A1

公开(公告)日：2004-12-02

申请号：US10448915

申请日：2003-05-30

发明人： Li-Peng Wang ,  Michael Dibattista ,  Seth Fortuna ,  Qing Ma ,  Valluri Rao

IPC分类号： H03H009/54

CPC分类号： H03H3/04 ,  H03H2003/0428 ,  H03H2003/0435

摘要： A material may be removed from the top electrode of a film bulk acoustic resonator to alter the mass loading effect and to adjust the frequency of one film bulk acoustic resonator on a wafer relative to other resonators on the same wafer. Similarly, the piezoelectric layer or the bottom electrode may be selectively milled with a focused ion beam to trim the resonator.

摘要翻译： 可以从膜体声波谐振器的顶部电极去除材料以改变质量负载效应并且调整晶片上相对于同一晶片上的其它谐振器的一个膜体声波谐振器的频率。 类似地，可以用聚焦离子束选择性地研磨压电层或底部电极以修整谐振器。

公开(公告)号：US20240364290A1

公开(公告)日：2024-10-31

申请号：US18655877

申请日：2024-05-06

申请人： Skyworks Solutions, Inc.

发明人： Benjamin Paul Abbott ,  Rei Goto

IPC分类号： H03H3/08 ,  H03H3/04 ,  H10N30/40 ,  H10N30/50

CPC分类号： H03H3/08 ,  H10N30/40 ,  H03H2003/0435 ,  H10N30/50

摘要： A surface acoustic wave device is disclosed. The surface acoustic wave device can include a single crystal support layer, an intermediate single crystal layer positioned over the single crystal support layer, a lithium based piezoelectric layer positioned over the intermediate single crystal layer, and an interdigital transducer electrode positioned over the lithium based piezoelectric layer, the surface acoustic wave device configured to generate a surface acoustic wave. The single crystal layer can be a quartz layer, such as a z-propagation quartz layer. A thermal conductivity of the single crystal support layer is greater than a thermal conductivity of the intermediate single crystal layer, and the thermal conductivity of the single crystal support layer is greater than a thermal conductivity of the lithium based piezoelectric layer.